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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP039N04LGXKSA1

Name: IPP039N04LGXKSA1
Brand: Infineon Technologies
SKU: IPP039N04LGXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP039N04LGXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP039N04LGXKSA1.pdf

Description:: MOSFET N-CH 40V 80A TO220-3

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Product details

Overview

IPP039N04LGXKSA1 from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO220-3 package, rated for 40 V V_DS, 3.9 mΩ R_DS(on) at V_GS = 10 V, 80 A continuous drain current at T_C = 25 °C, and 100% avalanche tested - deployed in high-efficiency DC/DC converters and synchronous rectification stages of SMPS.

For engineers reviewing the IPP039N04LGXKSA1 datasheet, IPP039N04LGXKSA1 pinout, IPP039N04LGXKSA1 application, or IPP039N04LGXKSA1 equivalent, key selection criteria include gate charge (Q_g = 59–78 nC), low R_DS(on) × Q_g figure-of-merit, logic-level drive compatibility (V_GS(th) = 1.2–2.0 V), and thermal resistance R_thJC = 1.6 K/W for high-power switching reliability.

Technical Context

This MOSFET employs Infineon's OptiMOS™3 silicon technology optimized for high-frequency switching in isolated and non-isolated DC/DC topologies. Its low gate-to-drain charge (Q_gd = 6.1 nC) and fast turn-on delay (t_d(on) = 10 ns) support efficient hard-switched and ZVS designs.

The device integrates a robust body diode with Q_rr = 50 nC and V_SD = 0.92–1.2 V at I_F = 80 A, enabling reliable synchronous rectification and freewheeling operation without external Schottky supplementation in 12 V and 24 V input systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - supports 12 V and 24 V bus architectures with margin against transients
R_DS(on) max	3.9 mΩ at V_GS = 10 V - enables <1 W conduction loss at 80 A in TO-220 footprint
I_D continuous	80 A at T_C = 25 °C - suitable for high-current output stages in server VRMs and telecom PSUs
Q_g	59–78 nC - balances switching speed and gate driver power requirement in 300–1000 kHz designs
R_thJC	1.6 K/W - allows direct heatsink mounting for thermal management without thermal interface layer degradation
V_GS(th)	1.2–2.0 V - ensures full enhancement with 3.3 V or 5 V logic-level controllers
E_AS	60 mJ - withstands single-pulse inductive energy in motor drive and converter fault conditions

Pinout & Package

IPP039N04LGXKSA1 uses the PG-TO220-3 package with isolated tab (drain-connected), standard through-hole mounting, and JEDEC-compliant footprint. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node in half-bridge
Pin 2 (Gate)	Control input	Receives logic-level PWM signal; requires <78 nC charge for full enhancement
Pin 3 (Drain)	High-side power path	Connected to drain tab; carries full load current and must be thermally coupled to heatsink

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - compatible with microcontroller GPIO and low-voltage gate drivers
Optimized FOM (R_DS(on) × Q_g)	~230 mΩ·nC - reduces combined conduction and switching losses in high-frequency SMPS
100% unclamped inductive avalanche tested	Rated for 60 mJ single-pulse E_AS - eliminates need for external snubbers in flyback and forward converters
Pb-free & halogen-free	RoHS-compliant plating per IEC61249-2-21 - meets industrial and automotive environmental compliance requirements

Applications

Server VRM Output Stage

Telecom DC/DC Converter

Use Scenario: High-current, high-efficiency buck converter delivering 12 V @ 100+ A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in multiphase buck topology.

Use Value: 3.9 mΩ R_DS(on) minimizes conduction loss; 78 nC Q_g enables clean 1 MHz switching with minimal gate drive power.

Use Scenario: 48 V to 12 V isolated DC/DC module in 5G base station power system.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant converter.

Use Value: Low V_SD (0.92 V) and 50 nC Q_rr reduce reverse recovery loss and improve light-load efficiency.

Industrial Motor Drive Inverter

Automotive ADAS Power Supply

Use Scenario: 24 V input H-bridge driving BLDC motors in factory automation actuators.

IC Role / Device Role / Timing Role: High-current half-bridge low-side switch with integrated freewheeling path.

Use Value: 80 A I_D rating and 1.6 K/W R_thJC sustain continuous operation under 60 °C ambient with passive heatsinking.

Use Scenario: 12 V input buck converter powering radar sensor and camera modules in ADAS ECUs.

IC Role / Device Role / Timing Role: Primary-side high-efficiency switch in compact, thermally constrained layout.

Use Value: Logic-level gate threshold (1.2–2.0 V) ensures compatibility with automotive-grade 3.3 V microcontrollers and fault-tolerant startup.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB039N04LG	Same die, PG-TO263-3 package; R_thJC = 1.3 K/W; higher thermal performance but SMD-only mounting	Preferred for automated PCB assembly and space-constrained layouts where thermal pad access is available	Select when board-level reflow capability exists and junction-to-case thermal resistance below 1.6 K/W is required
IRL3803PBF	Legacy Vishay part; R_DS(on) = 4.5 mΩ, Q_g = 80 nC, V_GS(th) = 1.0–2.0 V; not 100% avalanche tested	Suitable for cost-sensitive legacy designs but lacks E_AS rating and modern FOM optimization	Use only in non-safety-critical, low-frequency (<300 kHz) applications where avalanche robustness is not mandated

Compared with IPB039N04LG, IPP039N04LGXKSA1 trades slightly higher R_thJC for through-hole mechanical stability and serviceability; versus IRL3803PBF, it delivers lower conduction loss, superior switching efficiency, and guaranteed avalanche ruggedness for mission-critical power stages.

Availability

IPP039N04LGXKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, industrial motor drives, and automotive ADAS power supplies requiring stable component supply across multi-year production cycles.

Supply support for IPP039N04LGXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS™3 product line - engineered specifically for high-efficiency, high-frequency DC/DC conversion in data center, telecom, and industrial power systems.

FAQ

What is the maximum safe operating temperature for IPP039N04LGXKSA1?

The junction temperature must not exceed 175 °C, and the case temperature must stay ≤100 °C for rated 80 A continuous current. Derating begins above T_C = 25 °C per the I_D vs. T_C curve on page 4 of the datasheet; at T_C = 100 °C, I_D is limited to 73 A with V_GS = 4.5 V.

Can IPP039N04LGXKSA1 be used as a synchronous rectifier in a 48 V to 5 V buck converter?

Yes - its 40 V V_DS rating provides sufficient margin over 5 V output with transient overshoot, and its low R_DS(on) (3.9 mΩ) and fast body diode (Q_rr = 50 nC) enable high efficiency down to light loads. Gate drive must be synchronized to prevent shoot-through.

Is IPP039N04LGXKSA1 pin-compatible with IPB039N04LG?

No - IPP039N04LGXKSA1 uses PG-TO220-3 (through-hole), while IPB039N04LG uses PG-TO263-3 (SMD). Pin numbering differs: TO-220 has Source-Gate-Drain (1-2-3), TO-263 has Drain-Source-Gate (1-2-3) with drain tab as terminal 1. Mechanical and thermal mounting are incompatible.

Does this MOSFET require a gate resistor for protection?

A gate resistor (typically 2.2–10 Ω) is recommended to dampen ringing and limit peak gate current during fast switching. The device's R_G = 1.6 Ω internal gate resistance helps, but external series resistance improves EMI and driver stability - especially at >500 kHz switching frequencies.

IPP039N04LGXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 45µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP039N04LGXKSA1 FAQ

1.How can I place an order for IPP039N04LGXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP039N04LGXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP039N04LGXKSA1 reliable?

The price and inventory of IPP039N04LGXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP039N04LGXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP039N04LGXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP039N04LGXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP039N04LGXKSA1?

IPP039N04LGXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP039N04LGXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP039N04LGXKSA1?

For technical support, including IPP039N04LGXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP039N04LGXKSA1 requirements.

6.How does Aetrix verify that IPP039N04LGXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP039N04LGXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP039N04LGXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP039N04LGXKSA1?

All IPP039N04LGXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP039N04LGXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP039N04LGXKSA1 part is unused and in its original packaging.

Return procedure for IPP039N04LGXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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