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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP03N03LA

Name: IPP03N03LA
Brand: Infineon Technologies
SKU: IPP03N03LA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP03N03LA

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP03N03LA.pdf

Description:: MOSFET N-CH 25V 80A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP03N03LA from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO220-3-1 package, rated for 25 V V_DS, 3.0 mΩ max R_DS(on) at V_GS = 10 V and I_D = 55 A, 80 A continuous drain current, and 175 °C maximum junction temperature - optimized for high-frequency DC/DC converters in server VRMs and POL modules.

For engineers reviewing the IPP03N03LA datasheet, IPP03N03LA pinout, IPP03N03LA application, or IPP03N03LA equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), dv/dt ruggedness (6 kV/µs), 1 K/W thermal resistance (junction-to-case), and logic-level gate drive compatibility with 4.5 V controllers.

Technical Context

This MOSFET employs a trench-based silicon process optimized for low conduction and switching losses in synchronous buck topologies. Its gate threshold voltage (1.2–2.0 V typ) enables reliable turn-on with standard 3.3 V or 5 V logic, while its 43–57 nC total gate charge and 12–18 nC Q_gd support efficient high-frequency operation up to 1 MHz.

The device integrates a robust body diode with 20 nC reverse recovery charge (Q_rr) and 0.96–1.2 V forward voltage at 80 A, enabling hard-switched and synchronous rectification roles. Thermal design is supported by a 1 K/W R_thJC and JEDEC-qualified reliability for industrial and computing applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage compatible with 12 V input rails and 5 V output stages
R_DS(on) max	3.0 mΩ @ V_GS = 10 V, I_D = 55 A - Enables <1.2 W conduction loss at 80 A in TO-220 package
I_D cont.	80 A @ T_C = 25 °C - Sustained current capability limited by bondwire, not die thermal limit
Q_g total	43–57 nC - Low gate drive energy supports efficient 500 kHz–1 MHz switching with minimal driver loss
R_thJC	1 K/W - Enables direct heatsink mounting for high-power density thermal management
dv/dt rating	6 kV/µs - Confirmed avalanche-tested immunity to parasitic turn-on in fast-switching converters
T_j max	175 °C - Extended temperature range supports operation in constrained airflow environments

Pinout & Package

IPP03N03LA uses the PG-TO220-3-1 package: insulated case, vertical leadframe, 3-terminal through-hole configuration with tab-drain connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Logic-level compatible; requires ≤10 V drive; 0.9 Ω internal gate resistance limits ringing
Pin 2 (Drain)	High-side or low-side switch node	Electrically connected to metal tab; must be isolated from heatsink unless floating topology used
Pin 3 (Source)	Reference node for gate drive and current sensing	Low-inductance return path; critical for accurate R_DS(on)-based current monitoring

Key Features

Feature	Design Value
Logic-level gate drive	Turns on fully at V_GS ≥ 4.5 V - eliminates need for gate boosters in 5 V control systems
Low FOM (Q_g × R_DS(on))	~170 nC·mΩ - balances switching and conduction loss for optimal efficiency at 300–800 kHz
JEDEC-qualified reliability	Qualified per J-STD-20/JESD22 - validated for reflow, temperature cycling, and HAST in target applications
Robust body diode	Q_rr = 20 nC, V_SD = 0.96 V @ 80 A - reduces dead-time loss and EMI in synchronous rectification
Pb-free & RoHS compliant	Lead plating meets EU RoHS Directive 2011/65/EU - suitable for consumer and industrial end equipment

Applications

Server Voltage Regulator Modules (VRMs)

Point-of-Load (POL) Converters

Use Scenario: High-current, multi-phase buck converters delivering 0.8–1.8 V at >100 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in interleaved 3–6 phase topology.

Use Value: 3.0 mΩ R_DS(on) and 1 K/W R_thJC enable <92% efficiency at 100 A with minimal heatsink area.

Use Scenario: Compact 12 V–in, 3.3 V/5 V–out converters on FPGA or ASIC carrier boards.

IC Role / Device Role / Timing Role: Primary high-side switch in single-phase buck regulator with integrated controller.

Use Value: Logic-level gate allows direct drive from 5 V PWM controller; 6 kV/µs dv/dt rating prevents false turn-on during fast transitions.

Industrial Motor Drive Half-Bridges

Telecom DC/DC Brick Modules

Use Scenario: 24 V–48 V input half-bridge drivers for BLDC gate drivers and auxiliary power supplies.

IC Role / Device Role / Timing Role: Low-side switch in high-side gate driver bootstrap circuitry.

Use Value: 175 °C T_j max and JEDEC qualification ensure stable operation in sealed enclosures with ambient >85 °C.

Use Scenario: Input-stage switching MOSFET in 48 V telecom rectifiers and intermediate bus converters.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or LLC resonant converter.

Use Value: Low Q_rr (20 nC) and soft-recovery body diode reduce switching loss and EMI in high-density brick designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB03N03L G	PG-TO263-3 package; identical R_DS(on), Q_g, and V_DS; 0.95 K/W R_thJC	SMT mounting only; no through-hole option; better thermal performance on PCB	Select for automated assembly and improved board-level thermal dissipation
IRL3803PBF	20 V V_DS, 3.0 mΩ R_DS(on), higher Q_g (68 nC); TO-220AB package	Limited to ≤20 V systems; less dv/dt ruggedness (not specified); older generation process	Select only for legacy 20 V designs where footprint compatibility is mandatory

Compared with IPB03N03LG and IRL3803PBF, IPP03N03LA uniquely combines TO-220 through-hole mountability, 25 V rating, 6 kV/µs dv/dt immunity, and JEDEC qualification - making it optimal for new industrial and computing power designs requiring field-replaceability and thermal margin.

Availability

IPP03N03LA is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC bricks, and industrial motor drives requiring stable component supply across extended product lifecycles.

Supply support for IPP03N03LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS®2 logic-level power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure.

FAQ

What is the maximum safe operating voltage for IPP03N03LA?

The absolute maximum drain-source voltage (V_BR(DSS)) is 25 V at T_j = 25 °C, derating linearly to ~22.5 V at 175 °C. Operation above 25 V violates absolute maximum ratings and risks avalanche-induced failure, even with dv/dt rating. Design margin should maintain V_DS ≤ 20 V in transient conditions.

Can IPP03N03LA be used as a high-side switch with bootstrap gate drive?

Yes - its 1.2–2.0 V gate threshold and 4.5 V logic-level compatibility allow reliable turn-on using standard bootstrap circuits with 12 V gate drive. The 6 kV/µs dv/dt rating ensures immunity to false triggering during high dV/dt transitions typical in high-side configurations.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 0.96–1.2 V at 80 A and Q_rr = 20 nC - higher forward drop than Schottky diodes but lower Q_rr than most FRDs. It is suitable for synchronous rectification where gate control eliminates reverse recovery loss, but not recommended for freewheeling-only applications demanding ultra-low V_F.

Is IPP03N03LA suitable for automotive applications per AEC-Q101?

No - IPP03N03LA is not AEC-Q101 qualified. It is JEDEC-qualified for industrial and computing applications only. For automotive use, Infineon's OptiMOS™ 5 or StrongIRFET™ families with AEC-Q101 certification (e.g., IPP034N04L G) must be selected instead.

IPP03N03LA Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tape & Box (TB)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 55A, 10V

Vgs(th) (Max) @ Id:: 2V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7027 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP03N03LA FAQ

1.How can I place an order for IPP03N03LA through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP03N03LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP03N03LA reliable?

The price and inventory of IPP03N03LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP03N03LA is usually 5 days.

3.What payment methods are accepted for IPP03N03LA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP03N03LA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP03N03LA?

IPP03N03LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP03N03LA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP03N03LA?

For technical support, including IPP03N03LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP03N03LA requirements.

6.How does Aetrix verify that IPP03N03LA is sourced from the original manufacturer or authorized distributors?

All IPP03N03LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP03N03LA meets industry standards.

7.What is the process for return or replacement of IPP03N03LA?

All IPP03N03LA units undergo pre-shipment inspection (PSI). If there is an issue with IPP03N03LA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP03N03LA part is unused and in its original packaging.

Return procedure for IPP03N03LA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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