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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP03N03LB G

Name: IPP03N03LB G
Brand: Infineon Technologies
SKU: IPP03N03LB G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP03N03LB G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP03N03LB G.pdf

Description:: MOSFET N-CH 30V 80A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:4,746

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Product details

Overview

IPP03N03LB G from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO220-3-1 package, rated for 30 V V_DS, 3.1 mΩ R_DS(on) at V_GS = 10 V and 55 A, with 175 °C maximum junction temperature and dv/dt ruggedness up to 6 kV/µs. It serves as a primary synchronous rectifier or high-side switch in high-frequency DC/DC converters for server VRMs and telecom power supplies.

For engineers reviewing the IPP03N03LB G datasheet, IPP03N03LB G pinout, IPP03N03LB G application, or IPP03N03LB G equivalent, key selection criteria include its low gate charge × R_DS(on) figure-of-merit (44–59 nC × 3.1 mΩ), 80 A continuous drain current capability at T_C = 100 °C, and JEDEC-qualified reliability for industrial power conversion.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction and switching losses in hard-switched topologies. Its 3.4 mΩ typical R_DS(on) at 4.5 V gate drive enables direct logic-level control from 5 V microcontrollers or PWM controllers without gate drivers.

Dynamic parameters include 5732 pF typical input capacitance (C_iss), 11.2 nC typical Q_gd, and 19 nC typical switching charge (Q_sw), supporting efficient operation above 500 kHz in phase-shifted full-bridge and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	30 V - supports 12 V and 24 V input bus architectures with margin against transients
R_DS(on) max	3.1 mΩ at V_GS = 10 V, I_D = 55 A - enables <1.5 W conduction loss at 50 A
I_D Continuous	80 A at T_C = 100 °C - sustains high-current output stages without forced air cooling
Q_g Total	44–59 nC - balances gate drive strength and switching speed for <20 ns rise/fall times
dv/dt Rating	6 kV/µs - ensures robustness against parasitic turn-on in high-dI/dt synchronous rectification
T_j Max	175 °C - allows operation in sealed enclosures or high-ambient industrial environments
R_thJC	1.2 K/W - enables thermal design with standard TO-220 heatsinks for >100 W dissipation

Pinout & Package

Package: PG-TO220-3-1 - through-hole, single-ended, isolated tab (drain-connected), with 2.54 mm lead pitch and JEDEC-standard footprint.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node in half-bridge
Pin 2 (Gate)	Control input	Logic-level compatible; requires ≤10 V drive for full enhancement; gate resistance 0.9 Ω
Pin 3 (Drain)	Power output / high-side connection	Tab-connected drain; electrically tied to heatsink; must be insulated if heatsink is grounded

Key Features

Feature	Design Value
Logic-level gate threshold	V_GS(th) = 1.2–2.0 V - enables direct drive from 3.3 V or 5 V controllers without level-shifting
FOM (Q_g × R_DS(on))	~136–183 nC·mΩ - minimizes combined conduction + switching loss in high-frequency operation
Avalanche energy rating	E_AS = 580 mJ - withstands unclamped inductive switching events in flyback or forward converters
Reverse diode performance	V_SD = 0.92–1.2 V at 80 A - reduces body-diode conduction loss during dead-time in synchronous rectification

Applications

Server VRM Output Stage

Telecom DC/DC Converter

Use Scenario: Primary high-side switch in multiphase buck converters delivering 50–100 A at 0.8–1.8 V to CPU/GPU cores.

IC Role / Device Role / Timing Role: High-current, high-frequency power switch operating at 300–600 kHz with precise duty-cycle control.

Use Value: 3.1 mΩ R_DS(on) and 44 nC Q_g reduce total power loss by ≥12% vs. legacy 5 mΩ MOSFETs at 50 A.

Use Scenario: Synchronous rectifier in 48 V input, 12 V output isolated forward converter for base station power modules.

IC Role / Device Role / Timing Role: Low-loss secondary-side switch replacing Schottky diodes to improve efficiency above 94%.

Use Value: 0.92 V V_SD and 78 A I_S enable >1.5 W lower conduction loss than 40 V Schottky alternatives at full load.

Industrial Motor Drive Inverter

Automotive DC/DC Converter

Use Scenario: Half-bridge leg in 24 V battery-powered servo drives controlling PMSM motors up to 2 kW.

IC Role / Device Role / Timing Role: Hard-switched low-side switch with 175 °C T_j rating for extended thermal headroom under overload.

Use Value: 6 kV/µs dv/dt immunity prevents false turn-on during fast voltage transitions across motor windings.

Use Scenario: High-efficiency step-down converter supplying 5 V/3 A to ADAS camera modules from 12 V vehicle battery.

IC Role / Device Role / Timing Role: Compact, thermally robust power stage meeting AEC-Q101 stress requirements for under-hood placement.

Use Value: JEDEC qualification and -55 °C to 175 °C T_j range ensure reliable startup and operation across automotive temperature extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	R_DS(on) = 3.3 mΩ @ 10 V; Q_g = 60 nC; TO-220AB package	Higher gate charge increases driver loss; slightly higher R_DS(on) raises conduction loss at >60 A	Preferred where legacy IR footprint compatibility is required over minimal FOM
STL220N3LLH6	R_DS(on) = 2.7 mΩ @ 10 V; Q_g = 52 nC; PowerFLAT 5x6 package	Surface-mount only; lacks TO-220 mechanical robustness and thermal interface flexibility	Selected when board space is constrained and PCB-level thermal management is optimized

Compared with IRL3803PBF and STL220N3LLH6, IPP03N03LB G delivers the lowest Q_g × R_DS(on) product among TO-220 logic-level 30 V MOSFETs, offering superior efficiency in high-frequency, high-current DC/DC designs where thermal interface control and through-hole mounting are prioritized.

Availability

IPP03N03LB G is available at Aetrix Electronics and suitable for server VRMs, telecom power supplies, and industrial motor drives requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IPP03N03LB G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS®2 power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing, communications, and industrial power systems.

FAQ

Is IPP03N03LB G suitable for synchronous rectification in LLC resonant converters?

Yes. Its 0.92 V typical V_SD, 78 A continuous diode current, and 11.2 nC Q_gd enable fast, low-loss body-diode commutation and precise gate timing control in zero-voltage-switching LLC topologies operating up to 1 MHz. The 6 kV/µs dv/dt rating prevents spurious turn-on during resonant node transitions.

What is the maximum recommended gate resistor for 500 kHz switching?

A 2.7 Ω gate resistor is validated in the datasheet for 500 kHz operation with V_DD = 15 V and I_D = 40 A. This value balances switching speed (t_r = 10–16 ns) and gate ringing suppression. Lower values risk overshoot; higher values increase switching loss beyond 150 kHz.

Does IPP03N03LB G require a heatsink at 60 A continuous current?

Yes. At 60 A and T_C = 100 °C, power dissipation reaches ~11.2 W (60² × 0.0031 Ω). With R_thJC = 1.2 K/W, junction temperature rises ~13.4 K above case. A standard TO-220 heatsink with thermal resistance ≤ 2.5 K/W is required to maintain T_j ≤ 125 °C in still air.

Can IPP03N03LB G replace IPP045N03L in existing designs?

Yes, with minor layout review. Both are 30 V logic-level TO-220 MOSFETs, but IPP03N03LB G has 3.1 mΩ R_DS(on) vs. 4.5 mΩ for IPP045N03L and lower Q_g (44–59 nC vs. 65 nC). Gate drive remains compatible; thermal design benefits from improved FOM, though PCB copper area should be verified for 80 A current handling.

IPP03N03LB G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 55A, 10V

Vgs(th) (Max) @ Id:: 2V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7624 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP03N03LB G FAQ

1.How can I place an order for IPP03N03LB G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP03N03LB G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP03N03LB G reliable?

The price and inventory of IPP03N03LB G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP03N03LB G is usually 5 days.

3.What payment methods are accepted for IPP03N03LB G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP03N03LB G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP03N03LB G?

IPP03N03LB G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP03N03LB G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP03N03LB G?

For technical support, including IPP03N03LB G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP03N03LB G requirements.

6.How does Aetrix verify that IPP03N03LB G is sourced from the original manufacturer or authorized distributors?

All IPP03N03LB G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP03N03LB G meets industry standards.

7.What is the process for return or replacement of IPP03N03LB G?

All IPP03N03LB G units undergo pre-shipment inspection (PSI). If there is an issue with IPP03N03LB G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP03N03LB G part is unused and in its original packaging.

Return procedure for IPP03N03LB G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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