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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP040N06N3GHKSA1

Name: IPP040N06N3GHKSA1
Brand: Infineon Technologies
SKU: IPP040N06N3GHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP040N06N3GHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP040N06N3GHKSA1.pdf

Description:: MOSFET N-CH 60V 90A TO220-3

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Product details

Overview

IPP040N06N3GHKSA1 from Infineon Technologies is a discrete N-channel enhancement-mode power MOSFET optimized for high-efficiency switch-mode power supplies and motor control. It features 60 V V_DS, 90 A I_D (T_C = 25°C), R_DS(on) = 4.0 mΩ (max) at V_GS = 10 V, and TO-220-3 package. Used in DC-DC converters for server VRMs and telecom rectifiers.

For engineers reviewing the IPP040N06N3GHKSA1 datasheet, IPP040N06N3GHKSA1 pinout, IPP040N06N3GHKSA1 application, or IPP040N06N3GHKSA1 equivalent, key selection criteria include low conduction loss at high current, avalanche ruggedness for unclamped inductive switching, gate charge (Q_g = 68 nC typ), and thermal resistance (R_thJC = 0.65 K/W).

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology with trench-gate process, delivering reduced R_DS(on) × Q_g figure-of-merit for improved efficiency in hard-switched topologies. Its 100% avalanche-tested capability supports reliable operation under transient overvoltage conditions.

The device exhibits fast switching characteristics (t_on = 22 ns, t_off = 45 ns at R_G = 2.5 Ω), low gate threshold voltage (V_GS(th) = 2.0–4.0 V), and enhanced body diode reverse recovery performance (Q_rr = 170 nC typ), critical for synchronous rectification and ZVS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 48 V bus applications with margin.
I_D (T_C = 25°C)	90 A - Continuous drain current rating at case temperature, enabling high-power single-phase output stages.
R_DS(on) max	4.0 mΩ @ V_GS = 10 V - Low conduction loss supporting <1.5 W dissipation at 60 A DC.
Q_g	68 nC typ - Gate charge determining drive strength requirement for <50 ns switching transitions.
E_AS	450 mJ - Single-pulse avalanche energy rating ensuring robustness during inductive turn-off transients.
R_thJC	0.65 K/W - Junction-to-case thermal resistance enabling 100 W+ power dissipation with standard heatsinking.

Pinout & Package

Supplied in TO-220-3 plastic package with isolated tab (non-conductive mounting surface). Standard lead finish: matte tin (Sn) on Cu leads.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal connected to heatsink	Electrically active drain connection; requires insulating washer if heatsink is grounded.
Source	Reference node for gate drive and current sensing	Low-inductance return path; used for source-shunt current monitoring in half-bridge configurations.
Gate	Control electrode for channel modulation	High-impedance input requiring <10 V drive; sensitive to ESD and ringing-needs local RC snubber.

Key Features

Feature	Design Value
OptiMOS™ 3 trench technology	Enables 4.0 mΩ R_DS(on) in TO-220 without die size penalty, reducing PCB area vs. older 6.0 mΩ parts.
100% rated avalanche tested	Guarantees minimum 450 mJ single-pulse energy handling-no derating needed for flyback or buck-boost inductive loads.
Low Q_rr body diode	170 nC reverse recovery charge minimizes switching loss and EMI in synchronous rectifier mode.
Enhanced dV/dt ruggedness	Rated for 4.5 V/ns - prevents false turn-on in high-speed half-bridge layouts with common-source stray inductance.

Applications

Server VRM Phase Legs

Telecom Rectifier Modules

Use Scenario: High-current, high-frequency synchronous buck converter in 12 V input, 0.8–1.8 V output server CPU power delivery.

IC Role / Device Role / Timing Role: High-side and low-side switching element in multiphase interleaved topology.

Use Value: 4.0 mΩ R_DS(on) reduces conduction loss by >25% vs. 5.5 mΩ alternatives, improving full-load efficiency to >94%.

Use Scenario: Primary-side switching in 48 V telecom rectifier with active clamp forward or LLC resonant architecture.

IC Role / Device Role / Timing Role: Main power switch handling 60–80 A peak currents at 100–300 kHz.

Use Value: 68 nC Q_g enables gate drive with standard 2 A peak drivers, avoiding costly high-current gate ICs.

Industrial Motor Drives

EV Onboard Charger Stages

Use Scenario: Inverter leg in 3 kW BLDC motor drive operating from 48 V battery with PWM up to 20 kHz.

IC Role / Device Role / Timing Role: Half-bridge switch subjected to repetitive unclamped inductive switching.

Use Value: 450 mJ E_AS rating eliminates need for external clamping circuits, simplifying layout and BOM.

Use Scenario: PFC boost switch and DC-DC isolation stage in 3.3 kW bidirectional OBC for light EVs.

IC Role / Device Role / Timing Role: High-reliability power switch in thermally constrained enclosure with limited airflow.

Use Value: 0.65 K/W R_thJC allows 85°C case temperature operation without forced cooling, reducing system fan cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP90NF06L	R_DS(on) = 6.5 mΩ (max); Q_g = 95 nC; no avalanche rating specified	Lacks guaranteed avalanche energy; higher conduction loss increases thermal stress in high-current continuous duty	Acceptable only in non-inductive, low-duty-cycle applications where transient overvoltage risk is mitigated externally.
IRFZ44NPBF	R_DS(on) = 28 mΩ (max); Q_g = 67 nC; V_DS = 55 V	Lower voltage rating limits use to ≤40 V systems; 7× higher R_DS(on) demands larger paralleling or heatsinking	Suitable only for cost-sensitive, low-power (<500 W), non-telecom industrial controls with ample thermal margin.

Compared with STP90NF06L and IRFZ44NPBF, IPP040N06N3GHKSA1 delivers superior power density and reliability in 48–60 V systems due to its lower R_DS(on), guaranteed avalanche rating, and optimized gate charge-enabling smaller magnetics, fewer paralleled devices, and elimination of external snubbers.

Availability

IPP040N06N3GHKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom rectifiers, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IPP040N06N3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS™ 3 N-channel MOSFET product line, engineered for high-efficiency, high-current switching in 12–60 V power conversion systems including computing, communications, and industrial automation.

FAQ

What is the maximum pulsed drain current (I_DM) for IPP040N06N3GHKSA1?

The maximum pulsed drain current is 360 A, specified at T_C = 25°C with pulse width ≤10 μs and duty cycle ≤1%. This rating supports short-duration inrush or fault currents in UPS and soft-start circuits without device failure, provided PCB layout minimizes source inductance to avoid voltage overshoot.

Does IPP040N06N3GHKSA1 require a negative gate voltage for safe turn-off?

No. The device has a gate threshold voltage range of 2.0–4.0 V and is fully enhanced at V_GS = 0 V. A gate drive of 0 V reliably holds the MOSFET off; applying negative voltage is unnecessary and not recommended per Infineon's design guidelines.

Can IPP040N06N3GHKSA1 be mounted directly to an aluminum heatsink without electrical isolation?

No. The TO-220-3 package has an electrically active drain-connected tab. Direct mounting to a grounded heatsink creates a short circuit. An isolating pad (e.g., mica or polymer film) and shoulder washer must be used unless the heatsink is fully floating or referenced to drain potential.

What is the typical gate-to-source leakage current (I_GSS) at 25°C?

I_GSS is ±100 nA maximum at V_GS = ±20 V and T_J = 25°C. This ultra-low leakage ensures minimal gate drive current consumption in high-impedance gate networks and supports stable biasing in low-power control circuits without significant droop.

IPP040N06N3GHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 98 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 188W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP040N06N3GHKSA1 FAQ

1.How can I place an order for IPP040N06N3GHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP040N06N3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP040N06N3GHKSA1 reliable?

The price and inventory of IPP040N06N3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP040N06N3GHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP040N06N3GHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP040N06N3GHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP040N06N3GHKSA1?

IPP040N06N3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP040N06N3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP040N06N3GHKSA1?

For technical support, including IPP040N06N3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP040N06N3GHKSA1 requirements.

6.How does Aetrix verify that IPP040N06N3GHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP040N06N3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP040N06N3GHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP040N06N3GHKSA1?

All IPP040N06N3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP040N06N3GHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP040N06N3GHKSA1 part is unused and in its original packaging.

Return procedure for IPP040N06N3GHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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