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Infineon Technologies IPP040N06NXKSA1

Part No.:
IPP040N06NXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP040N06NXKSA1.pdf
Description:
TRENCH 40<-<100V
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,346

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Product details

Overview

IPP040N06NXKSA1 from Infineon Technologies is an N-channel 60 V, 4.0 mΩ typ. RDS(on) OptiMOS™ power MOSFET in PG-TO220-3 package, rated for 80 A continuous drain current at TC = 25 °C and 100% avalanche tested. It delivers low gate charge (Qg = 38–44 nC), fast switching (tr = 16 ns, tf = 9 ns), and superior thermal resistance (RthJC = 1.4 K/W), optimized for high-efficiency synchronous rectification in SMPS.

For engineers reviewing the IPP040N06NXKSA1 datasheet, IPP040N06NXKSA1 pinout, IPP040N06NXKSA1 application, or IPP040N06NXKSA1 equivalent, key selection criteria include RDS(on) at 10 V and 6 V gate drive, Qg/Qgd ratio for hard-switched and synchronous FET operation, avalanche energy rating (EAS = 70 mJ), and thermal performance under PCB-constrained cooling conditions.

Technical Context

This MOSFET employs trench-gate silicon technology with optimized cell pitch and reduced specific on-resistance to achieve 4.0 mΩ max RDS(on) at VGS = 10 V and ID = 80 A. Its gate threshold voltage (VGS(th) = 2.1–3.3 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers.

Dynamic characteristics are tailored for high-frequency SMPS: Ciss = 2700–3375 pF, Coss = 670–838 pF, and Crss = 28–56 pF support ZVS/ZCS design; Qgd/Qg ratio ≈ 0.18–0.24 ensures controllable dV/dt and low switching loss in synchronous buck and LLC topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Maximum blocking voltage compatible with 48 V input systems and 12 V/24 V secondary-side sync rectification
RDS(on), max4.0 mΩ at VGS = 10 V, ID = 80 A - Enables <1 W conduction loss at 80 A, critical for high-current DC-DC stages
Qg38–44 nC - Low total gate charge reduces driver power demand and supports >500 kHz switching in compact SMPS
EAS70 mJ (ID = 80 A, RGS = 25 Ω) - Confirmed single-pulse avalanche ruggedness for overvoltage transient handling
RthJC1.4 K/W - Enables direct heatsink mounting with predictable junction-to-case thermal path for thermal design
ID, cont80 A at TC = 25 °C - Sustained current capability verified under real-world case temperature measurement conditions
tr/tf16 ns / 9 ns - Fast edge rates minimize overlap loss in synchronous rectifiers and half-bridge configurations

Pinout & Package

IPP040N06NXKSA1 is housed in PG-TO220-3 package: through-hole, isolated tab, 3-terminal configuration with drain-connected metal tab for direct thermal mounting.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalLow-side reference node; connects to ground or low-side switch node; carries full load current
Pin 2 (Gate)Control inputHigh-impedance MOS gate requiring low-inductance driver path; sensitive to ringing and ESD
Pin 3 (Drain)Power output / high-side connectionInternally bonded to metal tab; electrically and thermally connected to heatsink; must be insulated if heatsink is grounded

Key Features

FeatureDesign Value
Optimized for synchronous rectificationLow Qgd/Qg ratio and fast tf enable efficient zero-voltage switching in secondary-side FETs
100% avalanche testedEvery unit validated for EAS ≥ 70 mJ - eliminates need for external clamping in flyback or LLC resonant converters
Superior thermal resistanceRthJC = 1.4 K/W allows 80 A operation with ≤ 112 °C junction rise above 25 °C case temperature
JEDEC-qualified reliabilityCompliant with J-STD-020 and JESD22 - qualified for industrial and telecom power supply lifetimes
Halogen-free & RoHSMeets IEC61249-2-21 and EU RoHS Directive - suitable for environmentally regulated end equipment

Applications

Server VRMTelecom PSU

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V @ up to 300 A).

IC Role / Device Role / Timing Role: Synchronous rectifier FET in low-side position, operating at 300–1000 kHz with adaptive gate drive.

Use Value: 4.0 mΩ RDS(on) and 44 nC Qg reduce both conduction and switching losses, enabling >95% efficiency at 200 A output.

Use Scenario: 48 V input, 12 V/24 V output telecom rectifier module with active OR-ing and hot-swap protection.

IC Role / Device Role / Timing Role: Primary-side switching FET in phase-shifted full-bridge topology with ZVS operation.

Use Value: 70 mJ EAS and 1.4 K/W RthJC ensure robustness during line transients and sustained 80 A conduction at elevated ambient temperatures.

Industrial SMPSEV On-board Charger (OBC) Auxiliary Supply

Use Scenario: 3-phase PFC + LLC resonant DC-DC stage in programmable logic controller (PLC) power system.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC transformer secondary winding.

Use Value: Fast tr/tf (16 ns/9 ns) and low Crss minimize reverse recovery loss and improve light-load efficiency.

Use Scenario: 400 V DC input auxiliary power supply (12 V/5 V) for control electronics in EV on-board chargers.

IC Role / Device Role / Timing Role: High-side switch in flyback or forward converter primary side, operating at 100–250 kHz.

Use Value: 60 V VDS rating and JEDEC qualification ensure long-term reliability under automotive-grade thermal cycling and humidity exposure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL110N6F7RDS(on) = 3.8 mΩ (max), Qg = 42 nC, TO-220FP package (lower power dissipation limit)Lower Ptot (68 W vs. 107 W) limits use in high-current continuous dutyPrefer for space-constrained designs where peak current < 60 A and heatsinking is limited
IRFB4115PBFRDS(on) = 4.5 mΩ (max), Qg = 120 nC, higher gate drive energy and slower switchingHigher Qg increases driver loss and limits usable frequency to ≤ 300 kHzAcceptable only when cost sensitivity outweighs efficiency and frequency requirements

Compared with STL110N6F7 and IRFB4115PBF, IPP040N06NXKSA1 offers the best balance of low RDS(on), moderate Qg, and high avalanche ruggedness - making it optimal for high-efficiency, high-reliability 60 V synchronous rectifiers and SMPS primary switches where thermal headroom and transient robustness are critical.

Availability

IPP040N06NXKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom PSUs, and industrial SMPS requiring stable component supply, long-lifecycle availability, and traceable sourcing.

Supply support for IPP040N06NXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's OptiMOS™ 60 V product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies in datacenter, telecom, and industrial applications.

FAQ

Is IPP040N06NXKSA1 suitable for 48 V battery-powered systems?

Yes. With a 60 V VDS rating and 80 A continuous current capability, it supports 48 V nominal systems including peak transients up to 58 V. Its 100% avalanche-tested construction handles inductive kickback from motor drives or relay coils without external snubbers.

What is the maximum recommended gate resistor for hard-switched operation?

A 3 Ω external gate resistor is specified in the datasheet for switching characterization (td(on), tr, etc.). For hard-switched applications at ≤ 300 kHz, 2.2–4.7 Ω balances switching speed and gate oscillation damping; values below 2 Ω require careful PCB layout to avoid shoot-through risk.

Does this MOSFET integrate a body diode suitable for synchronous rectification?

Yes. It features a fast, low-VSD (1.0–1.2 V at 80 A, 25 °C) intrinsic body diode with trr = 34–54 ns and Qrr = 34 nC. This enables efficient synchronous rectification without external Schottky diodes in most DC-DC topologies.

Can IPP040N06NXKSA1 be mounted directly to a heatsink without isolation?

No. The metal tab is internally connected to the drain terminal. Electrical isolation (e.g., mica washer + thermal grease or isolating pad) is mandatory when mounting to a grounded heatsink to prevent short-circuiting the drain node.

IPP040N06NXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
3.3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
44 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3375 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
3W (Ta), 107W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IPP040N06NXKSA1 FAQ

1.How can I place an order for IPP040N06NXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP040N06NXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP040N06NXKSA1 reliable?

The price and inventory of IPP040N06NXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP040N06NXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP040N06NXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP040N06NXKSA1 transactions.

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4.How is shipping managed for IPP040N06NXKSA1?

IPP040N06NXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP040N06NXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP040N06NXKSA1?

For technical support, including IPP040N06NXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP040N06NXKSA1 requirements.

6.How does Aetrix verify that IPP040N06NXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP040N06NXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP040N06NXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP040N06NXKSA1?

All IPP040N06NXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP040N06NXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP040N06NXKSA1 part is unused and in its original packaging.

Return procedure for IPP040N06NXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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