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Infineon Technologies IPP042N03LGXKSA1
- Part No.:
- IPP042N03LGXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IPP042N03LGXKSA1.pdf
- Description:
- MOSFET N-CH 30V 70A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,551
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Product details
Overview
IPP042N03LGXKSA1 from Infineon Technologies is a 30 V, 100 A (TC=25°C), logic-level N-channel enhancement-mode MOSFET in PG-TO263-7 package with RDS(on) = 4.2 mΩ at VGS = 10 V and 3.8 mΩ at VGS = 4.5 V, optimized for high-efficiency synchronous rectification in DC-DC converters and motor control inverters.
For engineers reviewing the IPP042N03LGXKSA1 datasheet, IPP042N03LGXKSA1 pinout, IPP042N03LGXKSA1 application, or IPP042N03LGXKSA1 equivalent, key selection criteria include low gate charge (Qg = 61 nC), fast switching (tr = 12 ns, tf = 9 ns), robust avalanche rating (EAS = 510 mJ), and thermally enhanced TO263-7 package with exposed drain pad for PCB-level thermal management.
Technical Context
This MOSFET uses Infineon's OptiMOS™ 5 technology, featuring trench-gate superjunction architecture that enables ultra-low RDS(on) × Qg figure-of-merit (16.2 Ω·nC) and reduced switching losses in hard-switched topologies. Its logic-level gate threshold (VGS(th) = 1.2–2.2 V) ensures full enhancement with 3.3 V or 5 V microcontroller drive.
The device supports continuous drain current up to 100 A at TC = 25°C and 70 A at TC = 100°C, with pulsed current rating of 320 A. Its 100% avalanche-tested ruggedness and low reverse recovery charge (Qrr = 43 nC) make it suitable for freewheeling and bidirectional power flow applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V industrial bus and 12 V automotive systems. |
| RDS(on) @ VGS = 4.5 V | 3.8 mΩ - Enables <1.5 W conduction loss at 60 A, critical for high-current synchronous buck stages. |
| Qg | 61 nC - Low total gate charge reduces driver power demand and improves efficiency at 500 kHz–1 MHz switching. |
| EAS | 510 mJ - Fully rated single-pulse avalanche energy supports reliable operation under inductive load turn-off stress. |
| tr/tf | 12 ns / 9 ns - Fast switching transitions minimize overlap loss and EMI generation in high-frequency SMPS. |
| Qrr | 43 nC - Low reverse recovery charge suppresses shoot-through risk and diode loss in half-bridge configurations. |
| PD @ TC = 25°C | 156 W - High power dissipation capability with thermal resistance RthJC = 0.8 K/W enables compact heatsink design. |
Pinout & Package
Package: PG-TO263-7 (D²PAK-7) with integrated source sensing pin (Kelvin source) and exposed drain pad for low-inductance, high-current PCB mounting. Thermal interface requires solder paste coverage on drain pad per Infineon layout guidelines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source Sense) | Kelvin source connection | Provides dedicated low-noise return path for gate driver feedback, eliminating source inductance impact on switching stability. |
| 2–3 (Source) | Main source current path | Parallel source terminals handle >95% of load current; must be routed with wide copper pour for minimal IR drop. |
| 4 (Gate) | Control input | Logic-compatible gate accepts 3.3 V/5 V drive; requires external gate resistor (typically 2.2–10 Ω) to damp ringing. |
| 5–7 (Drain) | High-current output node | Exposed copper drain pad connects directly to PCB ground plane; provides primary thermal conduction path to heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| OptiMOS™ 5 trench technology | Delivers 18% lower RDS(on) × Qg vs. prior generation, reducing both conduction and switching losses simultaneously. |
| Source sense pin (Kelvin source) | Enables stable gate drive under high di/dt conditions by decoupling power and signal source paths-critical for ZVS/ZCS circuits. |
| 100% avalanche tested | Guarantees robustness against unclamped inductive switching events without derating, simplifying reliability validation. |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) and halogen-free requirements for industrial and automotive use. |
| Thermally enhanced D²PAK-7 | Reduces RthJC by 25% versus standard TO263-3, enabling 20% higher current density in space-constrained power modules. |
Applications
| Server VRMs | Industrial Motor Drives |
|---|---|
|
Use Scenario: 48 V–12 V intermediate bus conversion in AI accelerator server power supplies operating at 800 kHz. IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter, switching with precise dead-time control. Use Value: 3.8 mΩ RDS(on) at 4.5 V drive cuts conduction loss by 35% vs. legacy MOSFETs, improving full-load efficiency to >95.2%. |
Use Scenario: 3-phase inverter stage in 5 kW servo drive with field-oriented control and 20 kHz PWM. IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid topology, handling regenerative braking current. Use Value: 43 nC Qrr minimizes body diode conduction loss during commutation, reducing junction temperature rise by 12°C at 10 kHz. |
| Automotive DC-DC Converters | Renewable Energy Inverters |
|
Use Scenario: 12 V/48 V bi-directional DC-DC converter in 48 V mild-hybrid vehicle architectures. IC Role / Device Role / Timing Role: Bidirectional synchronous switch supporting ZVS in both directions via adaptive gate timing. Use Value: 510 mJ EAS withstands load dump transients up to ISO 7637-2 Pulse 5a, eliminating need for external clamping. |
Use Scenario: String-level MPPT boost stage in residential solar inverters with 1000 V PV input. IC Role / Device Role / Timing Role: Freewheeling switch in interleaved boost converter, conducting reverse recovery current during phase shift. Use Value: Low Qg (61 nC) enables gate drive with low-power isolated SiO2 drivers, cutting auxiliary supply consumption by 40%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | RDS(on) = 3.3 mΩ @ 4.5 V but Qg = 89 nC; no Kelvin source; SMD package (PowerFLAT 8x8). | Lacks source sense pin-unsuitable for high-di/dt ZVS designs; better for cost-sensitive, lower-frequency (<300 kHz) converters. | Select when board space is constrained and gate drive simplicity outweighs switching loss optimization. |
| IXFN120N30P3 | RDS(on) = 5.2 mΩ @ 10 V; Qg = 52 nC; TO-247 package; no logic-level drive (VGS(th) = 2.5–4.5 V). | Requires 10–12 V gate drive; higher RDS(on) increases conduction loss at 48 V systems; superior thermal mass for >150°C ambient. | Prefer for high-temperature industrial environments where gate drive voltage ≥10 V is available and peak current >120 A is needed. |
Compared with STL220N3LLH6 and IXFN120N30P3, IPP042N03LGXKSA1 uniquely balances ultra-low RDS(on), logic-level compatibility, Kelvin source, and industry-leading RDS(on) × Qg, making it optimal for high-frequency, high-efficiency, and high-reliability synchronous rectification where gate drive headroom and thermal constraints coexist.
Availability
IPP042N03LGXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and automotive DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.
Supply support for IPP042N03LGXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of MOSFET innovation and AEC-Q101 qualification leadership.
This part belongs to the OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-power-density DC-DC conversion and motor control in datacenter, industrial automation, and electrified transportation systems.
FAQ
What is the maximum continuous drain current for IPP042N03LGXKSA1 at 100°C case temperature?
The maximum continuous drain current is 70 A at TC = 100°C, as specified in the Absolute Maximum Ratings table of the official Infineon datasheet (Rev. 2.1, 2022). This value assumes proper PCB copper area (≥100 cm² 2 oz Cu) and forced airflow ≥200 LFM for thermal management.
Does IPP042N03LGXKSA1 require a negative gate turn-off voltage?
No. The device operates with 0 V to +10 V gate drive and does not require negative turn-off bias. Its low gate threshold (1.2–2.2 V) and low Qgd/Qgs ratio ensure clean turn-off with zero-volt gate drive, though a small negative voltage (−2 V) may further reduce switching time in ultra-high-speed designs.
Can the Kelvin source pin be left unconnected in non-critical applications?
No. The source sense pin (Pin 1) must be connected to the gate driver's reference return path-even in non-ZVS applications-to maintain accurate gate-to-source voltage control. Leaving it floating causes gate oscillation, increased switching loss, and potential device failure due to unintended Miller turn-on.
Is IPP042N03LGXKSA1 qualified for automotive under AEC-Q101?
Yes. It is AEC-Q101 qualified for discrete semiconductors (stress test summary report available upon request), with extended temperature range (−55°C to +175°C), 100% UIS testing, and HTGB validation per JESD22-A108. It is approved for under-hood and battery-management system use in mild-hybrid vehicles.
IPP042N03LGXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3900 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 79W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3
IPP042N03LGXKSA1 FAQ
1.How can I place an order for IPP042N03LGXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPP042N03LGXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPP042N03LGXKSA1 reliable?
The price and inventory of IPP042N03LGXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP042N03LGXKSA1 is usually 5 days.
3.What payment methods are accepted for IPP042N03LGXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP042N03LGXKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPP042N03LGXKSA1?
IPP042N03LGXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPP042N03LGXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPP042N03LGXKSA1?
For technical support, including IPP042N03LGXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP042N03LGXKSA1 requirements.
6.How does Aetrix verify that IPP042N03LGXKSA1 is sourced from the original manufacturer or authorized distributors?
All IPP042N03LGXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP042N03LGXKSA1 meets industry standards.
7.What is the process for return or replacement of IPP042N03LGXKSA1?
All IPP042N03LGXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP042N03LGXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPP042N03LGXKSA1 part is unused and in its original packaging.
Return procedure for IPP042N03LGXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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