Infineon Technologies IPP048N06L G

Overview

IPP048N06L G from Infineon Technologies is a 60 V, logic-level N-channel enhancement-mode Power MOSFET in PG-TO263-3 (D²PAK) package, rated for 100 A continuous drain current at T_C = 25 °C, R_DS(on) = 4.4 mΩ at V_GS = 4.5 V and I_D = 66 A, and qualified for 175 °C operation. It is avalanche-rated, RoHS-compliant, and optimized for synchronous rectification and high-frequency DC-DC converters.

For engineers reviewing the IPP048N06L G datasheet, IPP048N06L G pinout, IPP048N06L G application, or IPP048N06L G equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, high pulsed current capability (400 A), robust dv/dt immunity (6 kV/μs), and thermal resistance of 0.5 K/W junction-to-case - critical for high-power density SMPS and server VRM designs.

Technical Context

This OptiMOS® device employs trench-gate superjunction technology to achieve low conduction and switching losses simultaneously. Its gate threshold voltage (1.2–2.0 V typ.) enables reliable turn-on with standard logic-level drivers, while its 5.7 nH typical gate inductance and 169–225 nC total gate charge support fast, controlled switching up to several hundred kHz.

The integrated body diode exhibits low reverse recovery charge (125–160 nC) and short t_rr (65–80 ns), minimizing commutation loss in hard-switched and synchronous rectifier topologies. Thermal design is enabled by a validated R_thJC of 0.5 K/W and defined PCB cooling requirements (6 cm² copper area on FR4).

Key Specifications

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, isolated drain tab, 3-terminal configuration with standard JEDEC outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Compared with IPB048N06L G, the identical die ensures zero design change; versus STL220N6F7, IPP048N06L G offers superior 4.5 V drive compatibility and lower gate drive power, making it optimal for space-constrained, logic-driven SMPS where thermal margin is limited.

Availability

IPP048N06L G is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, telecom rectifiers, and EV auxiliary power supplies requiring stable component supply across multi-year production cycles.

Supply support for IPP048N06L G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS® 60 V logic-level Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in datacenter, industrial, and telecom infrastructure.

FAQ

What is the maximum recommended gate resistor for IPP048N06L G in a 400 kHz synchronous buck?

A 1.3 Ω gate resistor is specified in the datasheet for 4.5 V drive and 100 A switching. At 400 kHz, this value balances switching loss and gate driver thermal stress. Lower values (≤0.8 Ω) increase peak gate current beyond 4 A and risk ringing; higher values (>2.2 Ω) extend t_r/t_f, raising switching loss above 1.8 W per cycle.

Can IPP048N06L G replace IPP055N06LG in an existing design?

Yes, with validation: IPP048N06L G has 4.4 mΩ R_DS(on) vs. 5.5 mΩ for IPP055N06LG at 4.5 V, offering ~20% lower conduction loss. Thermal and layout compatibility is identical (same PG-TO263-3 footprint and pinout), but gate charge is higher (225 nC vs. 195 nC), requiring verification of driver slew rate and shoot-through margin.

Is the drain tab electrically isolated in the PG-TO263-3 package?

No - the drain (Pin 3) is directly connected to the exposed metal tab. This tab must be soldered to a PCB copper pour serving as both thermal path and circuit node. Electrical isolation requires insulating thermal pads or dedicated isolated-mount packages like TO-220FP.

Does IPP048N06L G support paralleling for higher current?

Yes - its positive temperature coefficient of R_DS(on) (increases with T_j) ensures inherent current sharing. Layout must match source inductance and gate loop area across all paralleled devices; use individual 1.3 Ω gate resistors and Kelvin source connections to avoid oscillation and unequal dynamic sharing.