Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP04CN10NG

Name: IPP04CN10NG
Brand: Infineon Technologies
SKU: IPP04CN10NG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPP04CN10NG

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP04CN10NG.pdf

Description:: MOSFET N-CH 100V 100A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,302

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPP04CN10NG from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-frequency switching and synchronous rectification in DC-DC converters and motor drives. It delivers 100 V V_DS, 3.9 mΩ R_DS(on) (max, TO-220 package), 100 A continuous drain current at T_C = 100 °C, and operates up to 175 °C junction temperature. Its low gate charge × R_DS(on) figure of merit enables high-efficiency power conversion in server VRMs and industrial SMPS.

For engineers reviewing the IPP04CN10NG datasheet, IPP04CN10NG pinout, IPP04CN10NG application, or IPP04CN10NG equivalent, key selection criteria include its 3.9 mΩ on-resistance at 10 V gate drive, 158–210 nC total gate charge, 1000 mJ single-pulse avalanche energy, thermal resistance of 0.5 K/W (junction-to-case), and qualification per JEDEC standards for industrial power applications.

Technical Context

This OptiMOS™2 device uses a trench-gate silicon process to achieve low R_DS(on) while maintaining fast switching performance. Its dynamic parameters include C_iss = 10.4–13.8 nF, C_oss = 1.59–2.11 nF, and Q_g = 158–210 nC, supporting operation in hard-switched topologies above 100 kHz.

The integrated body diode exhibits t_rr = 100 ns and Q_rr = 300 nC at I_F = 100 A, enabling reliable synchronous rectification without external Schottky diodes. Gate threshold voltage is tightly specified at 2–4 V, with plateau voltage at 5.0 V, ensuring robust noise immunity in noisy power environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V input bus systems with 2× safety margin
R_DS(on) max	3.9 mΩ @ V_GS = 10 V, I_D = 100 A - enables <1.5 W conduction loss at 100 A
I_D cont.	100 A @ T_C = 100 °C - rated for sustained high-current output stages
E_AS	1000 mJ - withstands repetitive inductive turn-off stress in motor control
Q_g	158–210 nC - determines gate driver power requirement and switching loss trade-off
R_thJC	0.5 K/W - allows direct heatsink mounting with minimal thermal interface resistance
t_rr	100 ns - limits reverse recovery losses during synchronous FET commutation

Pinout & Package

IPP04CN10NG is housed in PG-TO220-3 package: through-hole, isolated tab, standard footprint compatible with legacy TO-220 heatsinks. Drain connected to metal tab; source and gate on leads.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-current power output node	Electrically connected to metal tab; requires insulated mounting or grounded heatsink
Source	Reference node for gate drive and current sensing	Low-inductance return path; critical for stable gate control in high-dI/dt circuits
Gate	Control terminal for channel modulation	High-impedance input requiring <210 nC charge; sensitive to ringing without proper RC snubbing

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	Reduces combined conduction + switching loss in 100–500 kHz DC-DC stages
175 °C maximum junction temperature	Enables operation in sealed enclosures or high-ambient industrial environments without derating
JEDEC-qualified reliability	Validated for long-term use in telecom rectifiers and UPS systems per JESD22-A108
Halogen-free & RoHS-compliant	Meets IEC61249-2-21 and EU Directive 2011/65/EU for green manufacturing
Integrated robust body diode	Eliminates need for external anti-parallel diode in half-bridge synchronous rectifiers

Applications

Server VRM Power Stage

Industrial Motor Drive Inverter

Use Scenario: High-density 12 V input → 0.8–1.8 V output buck converter supplying CPU/GPU cores.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–500 kHz with 100 A peak load current.

Use Value: 3.9 mΩ R_DS(on) reduces conduction loss by >40% vs. prior-gen 6 mΩ devices, improving full-load efficiency by 1.2%.

Use Scenario: 3-phase inverter stage driving 5–10 kW PMSM in CNC spindle or conveyor system.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid topology, handling 100 A continuous phase current.

Use Value: 1000 mJ E_AS ensures safe turn-off under short-circuit conditions without external clamping.

Telecom Rectifier Module

EV Onboard Charger (OBC) DC-DC Stage

Use Scenario: 48 V input → 12 V auxiliary supply in distributed base station power system.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward converter running at 200 kHz.

Use Value: 0.5 K/W R_thJC enables direct bolt-down heatsinking, reducing thermal stack height and system volume.

Use Scenario: Isolated bidirectional DC-DC stage interfacing 400 V battery with 12 V vehicle network.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter, conducting 100 A continuously.

Use Value: 100 ns t_rr and 300 nC Q_rr minimize dead-time losses and EMI during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP4110PBF	R_DS(on) = 4.5 mΩ (max), Q_g = 192 nC, same TO-247 package	Higher conduction loss; less suitable for ultra-high-efficiency VRMs	Preferred where higher avalanche rating (1200 mJ) outweighs efficiency penalty
STP110N10F7	R_DS(on) = 4.0 mΩ (max), Q_g = 165 nC, TO-220FP package (isolated)	Same footprint but lower thermal performance (R_thJC = 0.75 K/W)	Selected when electrical isolation is mandatory and 0.25 K/W thermal penalty is acceptable

Compared with IRFP4110PBF and STP110N10F7, IPP04CN10NG offers the lowest R_DS(on) and best thermal resistance in TO-220 form factor, making it optimal for space-constrained, thermally demanding high-current DC-DC designs where efficiency and junction temperature margin are critical.

Availability

IPP04CN10NG is available at Aetrix Electronics and suitable for server VRM power stages, industrial motor drive inverters, telecom rectifier modules, and EV onboard charger DC-DC stages requiring stable component supply and long-lifecycle support.

Supply support for IPP04CN10NG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™2 family-designed specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial applications where low R_DS(on) and fast switching are essential.

FAQ

What is the maximum allowable gate-source voltage for IPP04CN10NG?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent oxide damage. For reliable switching, gate drive should be limited to 10–15 V for full enhancement, with transient spikes clamped below ±20 V using Zener diodes or gate drivers with built-in protection.

Does IPP04CN10NG require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to dampen ringing and control dV/dt. For 100 A switching with typical gate drivers, a 1.6 Ω series resistor is validated in the datasheet for t_r/t_f control. Values between 1.0 Ω and 3.3 Ω balance switching speed against EMI and shoot-through risk in half-bridge configurations.

Can IPP04CN10NG be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increases with junction temperature) enables inherent current sharing. Successful parallel operation requires matched layout, identical gate drive paths, and symmetrical thermal mounting to avoid thermal runaway; derating total current by 15% is recommended for 2-device arrays.

Is the metal tab of IPP04CN10NG electrically isolated in the TO-220 package?

No-the drain is directly connected to the metal tab in the PG-TO220-3 package. Electrical isolation must be achieved using insulating shoulder washers and isolated mounting hardware. Thermal interface materials with dielectric strength ≥2 kV are required when mounting to grounded heatsinks.

IPP04CN10NG Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 210 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP04CN10NG FAQ

1.How can I place an order for IPP04CN10NG through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP04CN10NG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP04CN10NG reliable?

The price and inventory of IPP04CN10NG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP04CN10NG is usually 5 days.

3.What payment methods are accepted for IPP04CN10NG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP04CN10NG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP04CN10NG?

IPP04CN10NG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP04CN10NG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP04CN10NG?

For technical support, including IPP04CN10NG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP04CN10NG requirements.

6.How does Aetrix verify that IPP04CN10NG is sourced from the original manufacturer or authorized distributors?

All IPP04CN10NG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP04CN10NG meets industry standards.

7.What is the process for return or replacement of IPP04CN10NG?

All IPP04CN10NG units undergo pre-shipment inspection (PSI). If there is an issue with IPP04CN10NG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP04CN10NG part is unused and in its original packaging.

Return procedure for IPP04CN10NG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…