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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP04CN10NGXKSA1

Name: IPP04CN10NGXKSA1
Brand: Infineon Technologies
SKU: IPP04CN10NGXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP04CN10NGXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP04CN10NGXKSA1.pdf

Description:: MV POWER MOS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP04CN10NGXKSA1 from Infineon Technologies is a 100 V, 110 A, 4.8 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPP04CN10NGXKSA1 datasheet, IPP04CN10NGXKSA1 pinout, IPP04CN10NGXKSA1 application, or IPP04CN10NGXKSA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g of 120 nC, t_r/t_f switching times, avalanche ruggedness rating, and thermal resistance R_thJC of 0.55 K/W.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology with trench-gate superjunction architecture, delivering low conduction loss and fast switching performance. It features a fully rated 100 V V_DS, 110 A continuous drain current (T_C = 25 °C), and integrated robust body diode with t_rr = 100 ns and Q_rr = 150 nC.

The device supports hard-switched and synchronous rectifier topologies up to 1 MHz, with gate threshold voltage V_GS(th) = 2.0–4.0 V and total gate charge Q_g = 120 nC at V_GS = 10 V, enabling efficient gate driver interface in high-density power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands 100 V drain-source blocking voltage, suitable for 48 V input bus systems with margin.
R_DS(on) max @ V_GS = 10 V	4.8 mΩ - Enables <1 W conduction loss at 110 A, critical for high-current VRM phases.
I_D continuous @ T_C = 25 °C	110 A - Supports high-output-current power stages without parallel devices in compact designs.
Q_g	120 nC - Determines gate driver power requirement and switching speed; enables sub-100 ns turn-on with 2 A drivers.
R_thJC	0.55 K/W - Allows 100 W dissipation with ≤55 K junction-to-case temperature rise, supporting forced-air cooling.
E_AS	1000 mJ - Rated single-pulse avalanche energy ensures reliability under inductive load switching stress.
t_r/t_f	17/49 ns - Fast switching transitions reduce overlap loss in synchronous buck converters operating >500 kHz.

Pinout & Package

IPP04CN10NGXKSA1 is housed in PG-TO220-3 package with isolated tab (drain-connected), standard through-hole mounting, and JEDEC-compliant footprint for mechanical stability and thermal transfer to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects directly to PCB ground plane for minimal loop inductance.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <120 nC charge; sensitive to ESD and ringing without proper RC snubbing.
Pin 3 (Drain)	Power output / high-side switch node	Internally connected to metal tab; must be electrically isolated from heatsink unless system design permits common-drain configuration.

Key Features

Feature	Design Value
OptiMOS™ 5 trench-gate technology	Delivers 20% lower R_DS(on) × Q_g figure-of-merit vs. prior generation, improving efficiency in 48 V–12 V step-down converters.
100% avalanche tested	Each unit undergoes single-pulse E_AS validation at 1000 mJ, ensuring robustness in unclamped inductive switching events.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level MSL3, enabling standard reflow assembly without special baking protocols.
Enhanced body diode softness (t_rr = 100 ns)	Reduces voltage overshoot and EMI during freewheeling in synchronous rectifiers, easing EMI filter design.

Applications

Server VRM Phase Legs

Telecom 48 V DC-DC Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) at up to 600 A.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in interleaved phase-leg topology, switching at 500–800 kHz.

Use Value: 4.8 mΩ R_DS(on) minimizes conduction loss; 120 nC Q_g enables precise timing control with low-power gate drivers.

Use Scenario: Isolated or non-isolated 48 V input to 12 V/24 V intermediate bus converter in 5G base station power shelves.

IC Role / Device Role / Timing Role: Primary-side switch or secondary-side synchronous rectifier in forward or LLC resonant topology.

Use Value: 100 V rating provides 2× safety margin over 48 V nominal; 0.55 K/W R_thJC sustains >80 W dissipation with passive heatsinking.

Industrial Motor Drive Inverters

EV On-Board Charger (OBC) PFC Stages

Use Scenario: 3-phase inverter stage driving 3–7.5 kW AC induction motors in HVAC and pump controllers.

IC Role / Device Role / Timing Role: Half-bridge low-side switch handling 60–100 A peak phase current at 8–20 kHz PWM frequency.

Use Value: Avalanche ruggedness (E_AS = 1000 mJ) prevents failure during motor stall or short-circuit transients.

Use Scenario: Boost PFC switch in 3.3–6.6 kW bidirectional OBCs converting AC grid to 400 V DC link.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating in CCM at 65–100 kHz with high duty-cycle variation.

Use Value: Low Q_g/R_DS(on) ratio reduces both switching and conduction losses, improving PFC efficiency to >98.5%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 3.8 mΩ @ 10 V, Q_g = 135 nC, R_thJC = 0.45 K/W	Higher current density but larger gate charge increases driver loss; requires tighter thermal layout.	Preferred where board space is constrained and thermal interface is optimized for lower R_thJC.
IXFH110N10P	R_DS(on) = 5.2 mΩ @ 10 V, Q_g = 95 nC, TO-247 package	Lower gate charge eases driver design but higher R_DS(on) increases conduction loss at >80 A.	Preferred when gate drive simplicity and ruggedness outweigh conduction loss in medium-power industrial inverters.

Compared with STL220N10F7 and IXFH110N10P, IPP04CN10NGXKSA1 offers balanced trade-off between conduction loss, switching loss, and thermal performance in TO-220 form factor-ideal for cost-sensitive, high-volume telecom and server power modules where package compatibility and supply chain maturity matter.

Availability

IPP04CN10NGXKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IPP04CN10NGXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This part belongs to the OptiMOS™ 5 power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial applications demanding low R_DS(on) × Q_g FoM.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature T_j(max) is 175 °C per datasheet limits. For reliable long-term operation, derating is required above 125 °C ambient; thermal design must ensure T_j ≤ 150 °C under worst-case load and cooling conditions to maintain 10-year lifetime per JEDEC JEP47 guidelines.

Is IPP04CN10NGXKSA1 suitable for paralleling multiple devices?

Yes-its positive temperature coefficient of R_DS(on) ensures inherent current sharing. Layout must balance gate loop inductance and source inductance across all paralleled units; use Kelvin source connections and matched gate resistors to avoid dynamic imbalance during switching transitions.

Does this MOSFET require a gate resistor for stability?

Yes-a series gate resistor (typically 2.2–10 Ω) is mandatory to dampen gate oscillation caused by PCB trace inductance interacting with C_iss. Without it, ringing can exceed V_GS(max) = ±20 V, risking gate oxide damage or false turn-on during high dv/dt events.

Can the metal tab be electrically connected to system ground?

No-the drain is internally bonded to the metal tab. Connecting the tab to ground creates a short circuit. Electrical isolation via insulating pad or shoulder washer is required unless the application uses a floating heatsink or drain-referenced thermal path.

IPP04CN10NGXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 210 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP04CN10NGXKSA1 FAQ

1.How can I place an order for IPP04CN10NGXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP04CN10NGXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP04CN10NGXKSA1 reliable?

The price and inventory of IPP04CN10NGXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP04CN10NGXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP04CN10NGXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP04CN10NGXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP04CN10NGXKSA1?

IPP04CN10NGXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP04CN10NGXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP04CN10NGXKSA1?

For technical support, including IPP04CN10NGXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP04CN10NGXKSA1 requirements.

6.How does Aetrix verify that IPP04CN10NGXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP04CN10NGXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP04CN10NGXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP04CN10NGXKSA1?

All IPP04CN10NGXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP04CN10NGXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP04CN10NGXKSA1 part is unused and in its original packaging.

Return procedure for IPP04CN10NGXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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