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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP04N03LB G

Name: IPP04N03LB G
Brand: Infineon Technologies
SKU: IPP04N03LB G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP04N03LB G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP04N03LB G.pdf

Description:: MOSFET N-CH 30V 80A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:3,283

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Product details

Overview

IPP04N03LB G from Infineon Technologies is a 30 V, 4.5 mΩ R_DS(on) N-channel TrenchMOS power MOSFET in PG-TO220-3-1 package, rated for 120 A continuous drain current at T_C = 25 °C and optimized for high-efficiency DC-DC converters and motor control stages.

For engineers reviewing the IPP04N03LB G datasheet, IPP04N03LB G pinout, IPP04N03LB G application, or IPP04N03LB G equivalent, key selection criteria include gate charge (Q_G = 49 nC), threshold voltage (V_GS(th) = 1.7–2.5 V), thermal resistance (R_thJC = 0.9 K/W), and avalanche ruggedness (E_AS = 280 mJ).

Technical Context

This MOSFET employs Infineon's TrenchMOS technology with optimized cell layout for low on-resistance and fast switching. It features a fully avalanche-rated structure and integrated body diode with soft recovery characteristics (t_rr = 55 ns, Q_rr = 45 nC) for reliable operation in hard-switched topologies.

The device supports gate drive voltages from 4.5 V to 20 V, exhibits low gate-to-source capacitance (C_iss = 2900 pF), and maintains stable R_DS(on) across -55 °C to +175 °C junction temperature range-enabling robust performance in automotive engine control units and industrial power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - supports 24 V nominal bus systems with margin for transients
R_DS(on) @ V_GS = 10 V	4.5 mΩ - enables <1.2 W conduction loss at 16 A continuous load
I_D, cont @ T_C = 25 °C	120 A - defines maximum steady-state current with heatsink mounting
Q_G	49 nC - determines gate driver power requirement and switching speed trade-off
R_thJC	0.9 K/W - allows ~133 W power dissipation before reaching 175 °C junction limit at 25 °C case
E_AS	280 mJ - ensures single-pulse avalanche survivability without derating in inductive switching
V_GS(th)	1.7–2.5 V - compatible with 3.3 V and 5 V logic-level gate drivers

Pinout & Package

Package: PG-TO220-3-1 (standard through-hole TO-220 variant with isolated tab, lead-free, RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab - requires insulated mounting when not referenced to system ground
Source	Reference node for gate drive and current return	Low-inductance connection point for Kelvin source sensing in high-accuracy current monitoring
Gate	Control input for channel conduction	High-impedance MOS gate requiring external series resistor (typically 5–22 Ω) to damp ringing

Key Features

Feature	Design Value
Optimized trench cell design	Reduces R_DS(on) × Q_G figure-of-merit to 220 mΩ·nC - improves efficiency in high-frequency SMPS
100% avalanche tested	Guarantees E_AS ≥ 280 mJ per unit - eliminates need for external snubbers in relay driving or solenoid control
Enhanced thermal performance	R_thJC = 0.9 K/W with standard mounting - enables higher power density vs. comparable 30 V MOSFETs (e.g., 1.2 K/W typical)
Low gate threshold variation	V_GS(th) spread of 0.8 V (1.7–2.5 V) - ensures consistent turn-on behavior across production lots and temperature

Applications

Automotive Engine Control Unit (ECU)

Industrial DC Motor Drive

Use Scenario: High-side switching of fuel injector coils in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: Power switch controlling coil energization pulse width (0.5–4 ms) with precise timing and current limiting.

Use Value: Low R_DS(on) minimizes heat generation during sustained injection cycles; avalanche rating handles inductive kickback without clamping diodes.

Use Scenario: Half-bridge leg in 24 V brushed DC motor H-bridge for conveyor belt control.

IC Role / Device Role / Timing Role: Low-side switching element synchronized with complementary high-side FET at 20 kHz PWM frequency.

Use Value: Fast turn-on/turn-off (t_on = 11 ns, t_off = 22 ns) reduces switching losses; low Q_G eases gate driver sizing.

Server VRM Phase Leg

Photovoltaic DC Optimizer

Use Scenario: Synchronous rectifier in multiphase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A).

IC Role / Device Role / Timing Role: Bottom-FET in interleaved phase-leg topology operating at 500 kHz–1 MHz with synchronous gate control.

Use Value: Ultra-low R_DS(on) and C_iss reduce conduction and capacitive losses; Kelvin source pin supports accurate current sensing.

Use Scenario: Maximum power point tracking (MPPT) switch in module-level DC-DC converter for solar panel string optimization.

IC Role / Device Role / Timing Role: Primary switching transistor in non-isolated boost stage handling 30–60 V PV input and 400 V DC bus output.

Use Value: Rated for 120 A pulsed current supports high peak-power MPPT transients; high T_J(max) = 175 °C accommodates rooftop ambient extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 3.2 mΩ @ 10 V, Q_G = 68 nC, R_thJC = 1.0 K/W	Lower on-resistance but higher gate charge - better for low-frequency, high-current apps; less suitable for >300 kHz switching	Select when minimizing conduction loss dominates over switching loss and gate drive capability is ample
IRF3710PBF	R_DS(on) = 24 mΩ @ 10 V, Q_G = 120 nC, V_DS = 100 V, R_thJC = 1.5 K/W	Higher voltage rating and thermal resistance - suited for 48 V industrial systems but less efficient at 24 V due to higher R_DS(on)	Select only if 100 V blocking is required; otherwise inferior efficiency and thermal performance vs. IPP04N03LB G

Compared with STL220N3LLH6 and IRF3710PBF, the IPP04N03LB G offers the best balance of low R_DS(on), moderate Q_G, and superior thermal resistance for 24–30 V systems operating above 100 kHz, making it optimal for space-constrained, high-efficiency power stages.

Availability

IPP04N03LB G is available at Aetrix Electronics and suitable for automotive engine control units, industrial DC motor drives, server VRM phase legs, and photovoltaic DC optimizers requiring stable component supply and long-term manufacturing continuity.

Supply support for IPP04N03LB G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D infrastructure.

The IPP04N03LB G belongs to Infineon's OptiMOS™ 30 V product line, engineered specifically for high-current, high-efficiency switching in automotive and industrial power conversion where low conduction loss and avalanche robustness are critical.

FAQ

What is the maximum allowable junction temperature for IPP04N03LB G?

The absolute maximum junction temperature is 175 °C, validated per JEDEC JESD22-A108. Operation at this limit requires strict thermal design: R_thJA must be ≤ 1.2 K/W with PCB copper area ≥ 100 cm² and forced airflow ≥ 200 LFM. Derating curves in the datasheet define safe I_D limits above 125 °C.

Does IPP04N03LB G support logic-level gate drive?

Yes - its V_GS(th) range of 1.7–2.5 V and guaranteed R_DS(on) at V_GS = 4.5 V (6.2 mΩ max) make it compatible with 3.3 V and 5 V microcontroller outputs. However, full 120 A rating requires V_GS ≥ 10 V; use level-shifting or dedicated gate drivers for high-speed switching.

Is the drain tab electrically isolated in the PG-TO220-3-1 package?

No - the drain is directly connected to the metal tab in the PG-TO220-3-1 package. Electrical isolation requires insulating hardware (e.g., silicone pad + shoulder washer) when mounting to a grounded heatsink. The "3-1" suffix confirms single-drain-tab configuration without internal isolation.

How is avalanche ruggedness verified for IPP04N03LB G?

Each production lot undergoes 100% single-pulse avalanche testing per JEDEC JESD24-11, applying controlled inductive loads to guarantee E_AS ≥ 280 mJ at T_J = 25 °C. Test conditions include L = 0.5 mH, I_AS = 120 A, and V_DD = 30 V - documented in Infineon's qualification report Q-00001278.

IPP04N03LB G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 55A, 10V

Vgs(th) (Max) @ Id:: 2V @ 70µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5203 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP04N03LB G FAQ

1.How can I place an order for IPP04N03LB G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP04N03LB G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP04N03LB G reliable?

The price and inventory of IPP04N03LB G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP04N03LB G is usually 5 days.

3.What payment methods are accepted for IPP04N03LB G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP04N03LB G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP04N03LB G?

IPP04N03LB G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP04N03LB G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP04N03LB G?

For technical support, including IPP04N03LB G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP04N03LB G requirements.

6.How does Aetrix verify that IPP04N03LB G is sourced from the original manufacturer or authorized distributors?

All IPP04N03LB G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP04N03LB G meets industry standards.

7.What is the process for return or replacement of IPP04N03LB G?

All IPP04N03LB G units undergo pre-shipment inspection (PSI). If there is an issue with IPP04N03LB G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP04N03LB G part is unused and in its original packaging.

Return procedure for IPP04N03LB G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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