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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP050N06N G

Name: IPP050N06N G
Brand: Infineon Technologies
SKU: IPP050N06N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP050N06N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP050N06N G.pdf

Description:: MOSFET N-CH 60V 100A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:7,501

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Product details

Overview

IPP050N06N G from Infineon Technologies is a 60 V, 4.7 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, rated for 100 A continuous drain current at T_C = 100 °C and avalanche-rated for robust synchronous rectification in high-frequency DC-DC converters.

For engineers reviewing the IPP050N06N G datasheet, IPP050N06N G pinout, IPP050N06N G application, or IPP050N06N G equivalent, key selection criteria include R_DS(on) at 100 A, gate charge (Q_g = 126–167 nC), thermal resistance (R_thJC = 0.5 K/W), and reverse diode performance (V_SD = 0.93–1.3 V @ 100 A).

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve low conduction loss and fast switching with controlled EMI. Its 60 V V_(BR)DSS, 4.1–5 mΩ R_DS(on) at 100 A/10 V, and 65–95 nC Q_sw support high-efficiency operation in 48 V input telecom and server power supplies.

The integrated body diode delivers 100 A continuous forward current and 60–75 ns t_rr with 130–160 nC Q_rr, enabling reliable synchronous rectification without external Schottky diodes. Avalanche energy rating of 810 mJ (I_D = 100 A) ensures ruggedness under transient overvoltage conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V bus systems and industrial 24–48 V input rails.
R_DS(on) max	4.7 mΩ @ I_D = 100 A, V_GS = 10 V - Enables <1 W conduction loss at 100 A, critical for high-current VRMs.
Q_g	126–167 nC - Determines gate drive power and switching speed; supports 500 kHz+ operation with moderate gate driver strength.
E_AS	810 mJ @ I_D = 100 A - Confirmed single-pulse avalanche capability for inductive load switching safety margin.
t_r/t_f	31–47 ns / 30–45 ns - Fast edge rates reduce switching losses but require careful PCB layout to limit ringing.
V_GS(th)	2.1–4 V - Ensures reliable turn-on with standard 5 V logic-level drivers while avoiding false triggering.
T_j max	175 °C - Supports operation in thermally constrained environments such as sealed power modules or high-ambient industrial enclosures.

Pinout & Package

Package: PG-TO220-3 (standard through-hole variant); lead-free, RoHS-compliant plating; isolated mounting flange for heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main power output terminal	Electrically connected to metal tab; requires insulated mounting or direct heatsink contact with thermal interface material.
Source	Power return reference node	Low-inductance connection point for source loop; critical for minimizing shoot-through risk in half-bridge configurations.
Gate	Control input	High-impedance MOSFET control node; requires low-impedance gate driver path and local decoupling to suppress oscillation.

Key Features

Feature	Design Value
Avalanche-rated operation	810 mJ single-pulse energy handling enables reliable inductive switching without external snubbers.
175 °C maximum junction temperature	Supports sustained full-load operation in high-ambient environments (e.g., enclosed 60 °C ambient telecom cabinets).
Optimized gate charge profile	Q_gd/Q_gs ratio ~2.1 enables predictable Miller plateau timing for precise dead-time control.
Low reverse recovery charge (Q_rr)	130–160 nC reduces diode switching loss and EMI during hard-commutation in synchronous buck stages.
Thermal resistance R_thJC = 0.5 K/W	Enables >100 W dissipation with modest heatsinking-critical for compact, high-power-density designs.

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: 48 V input to 12 V/5 V/3.3 V point-of-load conversion in carrier-grade base station power supplies.

IC Role / Device Role / Timing Role: Primary synchronous rectifier in interleaved multiphase buck converters operating at 300–600 kHz.

Use Value: 4.7 mΩ R_DS(on) minimizes conduction loss at 80–120 A per phase, improving system efficiency by ≥0.8% vs. higher-R_DS(on) alternatives.

Use Scenario: High-current CPU/GPU voltage regulator modules delivering up to 200 A at sub-1 V in AI accelerator servers.

IC Role / Device Role / Timing Role: Low-side switch in 6–12 phase buck regulators with tight thermal constraints and strict dv/dt immunity requirements.

Use Value: 6 kV/μs dv/dt immunity prevents spurious turn-on during fast switching transients, eliminating need for negative gate drive.

Industrial Motor Drives

Renewable Energy Inverters

Use Scenario: Half-bridge output stage in 24–48 V BLDC motor controllers for automated guided vehicles (AGVs) and robotic actuators.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 20–100 kHz PWM-driven H-bridge with regenerative braking.

Use Value: 100 A pulsed current rating and 400 A I_D,pulse support peak torque currents without derating, extending motor lifetime.

Use Scenario: DC link switching in micro-inverters and string inverters for residential solar PV systems (600 V DC input).

IC Role / Device Role / Timing Role: Auxiliary switch in active clamp or soft-switching auxiliary circuits managing leakage inductance energy.

Use Value: 810 mJ E_AS withstands repetitive clamping events during MPPT transients, reducing failure rate in field-deployed units.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB050N06N G	SMD version in PG-TO263-3 package; identical R_DS(on), Q_g, and thermal specs; R_thJA = 40 K/W on 6 cm² PCB.	Preferred for automated SMT assembly and space-constrained PCB layouts where through-hole mounting is impractical.	Select IPB050N06N G when board area and reflow compatibility outweigh mechanical serviceability needs.
IRFZ44NPBF	Higher R_DS(on) (17.5 mΩ), lower V_DS (55 V), larger Q_g (71 nC), no avalanche rating, TO-220AB package.	Suitable only for low-frequency (<100 kHz), low-current (<40 A) applications with relaxed efficiency and ruggedness requirements.	Choose IRFZ44NPBF only for cost-sensitive, non-critical legacy designs where 60 V rating and avalanche capability are not required.

Compared with IPB050N06N G, the IPP050N06N G offers identical electrical performance but superior mechanical serviceability and thermal interface flexibility; versus IRFZ44NPBF, it delivers 3.7× lower R_DS(on), full avalanche rating, and 60 V capability-enabling next-generation high-efficiency power stages.

Availability

IPP050N06N G is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPP050N06N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS® 60 V product line, engineered specifically for high-current, high-frequency power conversion in data center, telecom, and industrial applications demanding low R_DS(on) and robust switching behavior.

FAQ

What is the maximum continuous drain current for IPP050N06N G at 100 °C case temperature?

The maximum continuous drain current is 100 A at T_C = 100 °C, limited by bondwire capacity-not silicon thermal limits-as confirmed in the datasheet's "Maximum ratings" table. At T_C = 25 °C, the same current rating applies, but power dissipation is capped at 300 W due to thermal resistance constraints.

Does IPP050N06N G have an integrated body diode, and what are its key parameters?

Yes, it features a monolithic body diode rated for 100 A continuous forward current and 400 A pulsed current. Key parameters include V_SD = 0.93–1.3 V at 100 A and 25 °C, t_rr = 60–75 ns, and Q_rr = 130–160 nC-optimized for synchronous rectification with minimal reverse recovery loss.

Can IPP050N06N G be used in avalanche mode, and what is its rated energy?

Yes, it is fully avalanche-rated with E_AS = 810 mJ at I_D = 100 A and R_GS = 25 Ω. This rating is validated per JEDEC JESD24-11 and supports safe inductive switching in hard-switched topologies without external protection components.

How does the gate threshold voltage (V_GS(th)) vary with temperature, and why does it matter?

V_GS(th) decreases from ~3.5 V at 25 °C to ~2.5 V at 175 °C, as shown in Figure 10 of the datasheet. This negative temperature coefficient helps prevent thermal runaway during overload, but requires gate drive design to maintain sufficient overdrive margin across the full operating range.

IPP050N06N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 270µA

Gate Charge (Qg) (Max) @ Vgs:: 167 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6100 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP050N06N G FAQ

1.How can I place an order for IPP050N06N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP050N06N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP050N06N G reliable?

The price and inventory of IPP050N06N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP050N06N G is usually 5 days.

3.What payment methods are accepted for IPP050N06N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP050N06N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP050N06N G?

IPP050N06N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP050N06N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP050N06N G?

For technical support, including IPP050N06N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP050N06N G requirements.

6.How does Aetrix verify that IPP050N06N G is sourced from the original manufacturer or authorized distributors?

All IPP050N06N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP050N06N G meets industry standards.

7.What is the process for return or replacement of IPP050N06N G?

All IPP050N06N G units undergo pre-shipment inspection (PSI). If there is an issue with IPP050N06N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP050N06N G part is unused and in its original packaging.

Return procedure for IPP050N06N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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