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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP052N08N5AKSA1

Name: IPP052N08N5AKSA1
Brand: Infineon Technologies
SKU: IPP052N08N5AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP052N08N5AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP052N08N5AKSA1.pdf

Description:: MOSFET N-CH 80V 80A TO220-3

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Product details

Overview

IPP052N08N5AKSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-frequency switching and synchronous rectification in DC-DC converters. It features 80 V V_DS, 5.2 mΩ max R_DS(on) at V_GS = 10 V, 80 A continuous drain current (T_C = 25 °C), 42 nC total gate charge, and TO-220-3 package with tab-connected drain - used in server VRMs and telecom power supplies.

For engineers reviewing the IPP052N08N5AKSA1 datasheet, IPP052N08N5AKSA1 pinout, IPP052N08N5AKSA1 application, or IPP052N08N5AKSA1 equivalent, key selection criteria include R_DS(on) vs. gate charge trade-off, avalanche ruggedness (84 mJ), thermal resistance (R_thJC = 0.9 K/W), and synchronous FET suitability (Q_g(sync) = 36 nC).

Technical Context

This OptiMOS™ 5 device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_G figure-of-merit (FOM) while maintaining fast switching (t_d(on) = 17 ns, t_f = 7 ns). Its gate threshold voltage (2.2–3.8 V) supports standard 5 V and 10 V logic-level drive.

The integrated body diode exhibits low V_SD (1.0–1.2 V at 80 A) and controlled reverse recovery (Q_rr = 92–184 nC), enabling efficient synchronous rectification without external Schottky diodes in buck converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - maximum blocking voltage for 48 V input bus applications with 20 % derating margin
R_DS(on), max	5.2 mΩ @ V_GS = 10 V - enables <1.5 W conduction loss at 80 A in VRM phase legs
I_D, cont.	80 A @ T_C = 25 °C - supports high-current single-phase power stages up to 400 W
Q_G	42 nC - low gate drive energy reduces controller IC loading and EMI in >500 kHz designs
E_AS	84 mJ - 100 % avalanche tested for robustness against inductive switching transients
R_thJC	0.9 K/W - allows 125 W power dissipation with ≤112.5 °C junction rise above case at 25 °C ambient
Q_oss	51 nC - low output charge minimizes turn-off losses during hard-switching transitions

Pinout & Package

IPP052N08N5AKSA1 is housed in a through-hole TO-220-3 package with isolated mounting tab electrically connected to the drain terminal. The package provides mechanical stability and thermal path via the metal tab to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (left)	Gate	Control electrode; requires low-impedance driver due to 1.1–1.7 Ω internal gate resistance
Tab / Pin 2	Drain	Main power output node; tab must be electrically isolated from heatsink unless system ground reference permits
Pin 3 (right)	Source	Return path for load current; serves as local ground reference for gate drive loop

Key Features

Feature	Design Value
Optimized R_DS(on) × Q_G FOM	218 mΩ·nC - balances conduction and switching loss for 300–1000 kHz DC-DC operation
Synchronous rectifier capability	Q_g(sync) = 36 nC - enables zero-voltage switching in LLC and buck-derived topologies
Robust avalanche rating	E_AS = 84 mJ - eliminates need for external snubbers in flyback and forward converters
Low reverse recovery charge	Q_rr = 92–184 nC - reduces diode conduction loss and EMI in high-side switch configurations
JEDEC-qualified reliability	Qualified per J-STD-020 & JESD22 - ensures long-term stability in industrial and telecom environments

Applications

Server VRM Phase Legs

Telecom 48 V DC-DC Converters

Use Scenario: High-current, multi-phase buck converters delivering 12 V/100+ A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved phase-leg topology.

Use Value: 5.2 mΩ R_DS(on) cuts conduction loss by 35 % vs. prior-gen OptiMOS™ 4, improving full-load efficiency by 0.8 %.

Use Scenario: Isolated half-bridge or full-bridge DC-DC modules converting 48 V telecom input to 12 V or 5 V outputs.

IC Role / Device Role / Timing Role: Primary-side switching transistor in high-frequency resonant LLC converters.

Use Value: 42 nC Q_G and 7 ns fall time enable stable 700 kHz operation with <1.2 W gate drive loss.

Industrial Motor Drive Inverters

Automotive On-Board Chargers (OBC)

Use Scenario: 24–48 V three-phase inverters driving BLDC motors in factory automation equipment.

IC Role / Device Role / Timing Role: Half-bridge leg switch handling 30–50 A RMS motor current.

Use Value: 84 mJ E_AS withstands motor back-EMF spikes during emergency stop, eliminating external clamping diodes.

Use Scenario: Bidirectional AC/DC and DC/DC stages in 3.3 kW OBCs for EVs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in dual-active-bridge (DAB) isolation stage.

Use Value: Q_g(sync) = 36 nC and V_SD = 1.0–1.2 V reduce rectifier loss by 40 % vs. SiC Schottky alternatives below 100 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB052N08N5	Same die, PG-TO263-3 (D²PAK) package; R_thJC = 1.1 K/W; 10 % higher R_DS(on) at 6 V drive	Better suited for surface-mount PCBs with limited vertical clearance and automated assembly	Select when board space constraints preclude TO-220 mounting or thermal interface to heatsink is suboptimal
STL220N8F7	80 V, 2.2 mΩ R_DS(on), but Q_G = 105 nC; higher gate drive loss; no avalanche rating specified	Lower conduction loss at high current, but unsuitable for hard-switched or inductive load applications	Prefer only in low-frequency (<100 kHz), high-current linear-regulator-like use cases where switching loss is secondary

Compared with IPB052N08N5 and STL220N8F7, IPP052N08N5AKSA1 uniquely delivers balanced FOM (218 mΩ·nC), guaranteed avalanche ruggedness, and TO-220 thermal performance - making it optimal for high-reliability, medium-frequency power conversion where both efficiency and robustness are mandatory.

Availability

IPP052N08N5AKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, industrial motor drives, and automotive on-board chargers requiring stable component supply across multi-year production cycles.

Supply support for IPP052N08N5AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 5 family - engineered specifically for high-efficiency, high-frequency power conversion in data center, telecom, and industrial systems where low R_DS(on) × Q_G is critical.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V, but Infineon specifies 10 V as the nominal drive voltage for rated R_DS(on) and safe operating area. Operating above 15 V increases gate oxide stress and accelerates wear-out; sustained use beyond 12 V is not recommended without derating conduction current.

Does IPP052N08N5AKSA1 require a gate resistor for stability in high-speed switching?

Yes - a 1.6 Ω external gate resistor is used in the datasheet's switching time test conditions (td(on)/tr/tf). This value damps ringing caused by gate-drain capacitance (Crss = 23–40 pF) and parasitic inductance. Lower values risk shoot-through; higher values increase switching losses disproportionately.

Can this MOSFET replace a silicon carbide (SiC) device in a 650 V design?

No - IPP052N08N5AKSA1 has an 80 V V_DS rating and is not rated for 650 V systems. Attempting substitution would result in immediate avalanche failure under normal operating voltage. SiC devices serve fundamentally different voltage classes and cannot be interchanged with 80 V silicon MOSFETs.

Is the TO-220 tab electrically isolated from the PCB mounting holes?

No - the metal tab is internally connected to Pin 2 (Drain) and is not insulated. When mounted to a heatsink, the tab must either be electrically isolated using mica washers or bonded directly to system ground if the drain node is referenced to ground. Direct contact with non-isolated PCB copper will short the drain to ground.

IPP052N08N5AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 5.2mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 66µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3770 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP052N08N5AKSA1 FAQ

1.How can I place an order for IPP052N08N5AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP052N08N5AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP052N08N5AKSA1 reliable?

The price and inventory of IPP052N08N5AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP052N08N5AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP052N08N5AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP052N08N5AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP052N08N5AKSA1?

IPP052N08N5AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP052N08N5AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP052N08N5AKSA1?

For technical support, including IPP052N08N5AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP052N08N5AKSA1 requirements.

6.How does Aetrix verify that IPP052N08N5AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP052N08N5AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP052N08N5AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP052N08N5AKSA1?

All IPP052N08N5AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP052N08N5AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP052N08N5AKSA1 part is unused and in its original packaging.

Return procedure for IPP052N08N5AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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