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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP052NE7N3GHKSA1

Name: IPP052NE7N3GHKSA1
Brand: Infineon Technologies
SKU: IPP052NE7N3GHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP052NE7N3GHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP052NE7N3GHKSA1.pdf

Description:: MOSFET N-CH 75V 80A TO220-3

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Product details

Overview

IPP052NE7N3GHKSA1 from Infineon Technologies is a 75 V, 5.2 mΩ, 100 A (continuous) N-channel enhancement-mode power MOSFET in PG-HSOF-8 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPP052NE7N3GHKSA1 datasheet, IPP052NE7N3GHKSA1 pinout, IPP052NE7N3GHKSA1 application, or IPP052NE7N3GHKSA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, gate charge (Q_g = 78 nC), thermal resistance (R_thJC = 0.45 K/W), and avalanche-rated ruggedness (E_AS = 490 mJ).

Technical Context

This device uses Infineon's latest 7th-generation OptiMOS™ trench technology, delivering low conduction loss (R_DS(on) = 5.2 mΩ max @ V_GS = 10 V) and fast switching with Q_gd/Q_g ratio of 0.22 - critical for minimizing Miller-induced shoot-through in high-side synchronous buck stages.

It features a fully rated 100 A continuous drain current at T_C = 25 °C, 75 V V_DSS, and is qualified per JEDEC JESD47 with 100% UIS-tested avalanche capability - enabling robust operation under transient overcurrent conditions in high-density POL converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - supports 48 V input bus architectures with 50% derating margin for surge transients
R_DS(on) max @ 10 V	5.2 mΩ - enables <1.5 W conduction loss at 60 A in 12 V output VRMs
I_D cont @ T_C = 25 °C	100 A - allows single-device use in high-current CPU/GPU VRM phases
Q_g	78 nC - balances switching speed and gate driver loss in 500 kHz–1 MHz designs
R_thJC	0.45 K/W - permits >80 W dissipation with moderate heatsinking in HSOF-8 footprint
E_AS	490 mJ - withstands single-pulse inductive energy without failure in hard-switched topologies
Q_gd/Q_g	0.22 - reduces risk of false turn-on during high dv/dt commutation

Pinout & Package

Package: PG-HSOF-8 (exposed drain pad, surface-mount, thermally enhanced). Pin assignment verified per Infineon datasheet IPP052NE7N3GHKSA1 Rev. 2.0 (2023).

Pin/Terminal	Circuit Role	Design Meaning
1–3, 7–8 (Drain)	Main current path (source of heat)	Internally connected to exposed copper pad - must be soldered to PCB thermal plane for R_thJC performance
4–6 (Source)	Reference node for gate drive and current sensing	Low-inductance multi-pin connection minimizes source inductance in high-di/dt switching
5 (Gate)	Control terminal for channel modulation	Single-point entry reduces gate loop inductance; requires <10 Ω series resistance for EMI control

Key Features

Feature	Design Value
OptiMOS™ 7th-gen trench process	Enables 5.2 mΩ R_DS(on) in HSOF-8 - 22% lower than prior gen at same voltage class
100% UIS-tested avalanche rating	Guarantees single-pulse robustness up to 490 mJ without screening fallout
Halogen-free & RoHS-compliant	Meets IPC-JSTD-020D reflow profile and automotive ELV directive requirements
Enhanced gate oxide reliability	Specified for >10⁶ cycles at V_GS = ±20 V - suitable for long-life server PSU deployments
Low Q_gd/Q_g ratio	0.22 - suppresses Miller plateau duration, easing gate driver design in high-frequency sync-buck

Applications

Server VRM Phase Legs

Telecom 48 V Intermediate Bus Converters

Use Scenario: High-current, multiphase buck converter supplying CPU/GPU core voltage (0.8–1.2 V @ up to 600 A).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 500 kHz–1 MHz with tight dead-time control.

Use Value: 5.2 mΩ R_DS(on) and 0.45 K/W R_thJC enable >95% efficiency at 60 A per phase with minimal thermal derating.

Use Scenario: Isolated or non-isolated 48 V-to-12 V step-down for base station RF power amplifiers.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or secondary-side synchronous rectifier in LLC resonant topology.

Use Value: 75 V rating provides 50% margin over 48 V nominal bus; 490 mJ E_AS handles reflected leakage spikes without snubbers.

Industrial PLC Power Modules

AI Accelerator Board POL Converters

Use Scenario: Compact 24 V input, 3.3/5/12 V outputs powering I/O modules and fieldbus interfaces.

IC Role / Device Role / Timing Role: High-side switch in buck controller-based POL stage with integrated current sensing.

Use Value: Low Q_g (78 nC) and fast t_r/t_f (<20 ns) reduce switching losses while maintaining stable regulation under dynamic load steps.

Use Scenario: Multi-rail, high-transient-current supply for GPU memory (HBM2e) and interconnect (PCIe 5.0).

IC Role / Device Role / Timing Role: Low-side FET in 3-phase interleaved buck delivering 1.8 V @ 300 A peak with <100 ns load-step response.

Use Value: HSOF-8 package with vertical drain connection enables <0.5 nH source inductance - critical for sub-100 ns transient recovery.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH50N75X3	R_DS(on) = 12.5 mΩ @ 10 V; TO-247 package; higher R_thJC (0.75 K/W)	Better suited for lower-frequency (<300 kHz), higher-voltage (75 V) industrial motor drives	Select when thermal interface constraints prevent HSOF-8 mounting or when higher V_DS margin is needed beyond 75 V
STL220N7LF8AG	R_DS(on) = 4.8 mΩ @ 10 V; same HSOP-8 footprint but no exposed drain pad; R_thJC = 0.65 K/W	Targeted at cost-sensitive consumer power adapters with lower power density requirements	Choose only if board-level thermal management cannot accommodate full-pad soldering required by IPP052NE7N3GHKSA1

Compared with IXFH50N75X3 and STL220N7LF8AG, IPP052NE7N3GHKSA1 delivers optimal balance of ultra-low R_DS(on), industry-leading thermal resistance, and proven avalanche ruggedness - making it the preferred choice for space-constrained, high-efficiency server and AI hardware power stages.

Availability

IPP052NE7N3GHKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, and AI accelerator board POL converters requiring stable component supply and long-term lifecycle support.

Supply support for IPP052NE7N3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This part belongs to the OptiMOS™ 7th-generation power MOSFET product line, engineered specifically for high-efficiency, high-power-density DC-DC conversion in datacenter, telecom, and AI infrastructure applications.

FAQ

What is the maximum allowable gate-source voltage for IPP052NE7N3GHKSA1?

The absolute maximum V_GS is ±20 V per Infineon's datasheet Rev. 2.0. Operation above +15 V or below −10 V risks irreversible gate oxide damage. Recommended drive range is +10 V to +12 V for optimal R_DS(on) and safe margin against overshoot.

Does IPP052NE7N3GHKSA1 require external gate resistors in typical VRM applications?

Yes - a 4.7 Ω to 10 Ω series gate resistor is recommended to dampen ringing, limit peak gate current, and control dV/dt during turn-on. This prevents false triggering in multiphase layouts where adjacent FETs share common source paths and gate drivers.

How is thermal performance affected if the exposed drain pad is not fully soldered to the PCB?

Unsoldered or partially soldered drain pad increases R_thJC by ≥40%, degrading junction-to-case thermal resistance from 0.45 K/W to >0.63 K/W. This causes >25 °C higher T_J at 60 A, risking premature thermal shutdown or accelerated wear-out.

Can IPP052NE7N3GHKSA1 replace IPP045N10N5 in an existing 12 V output VRM design?

No - although both are OptiMOS™ devices, IPP045N10N5 is a 100 V, 4.5 mΩ part in TO-220 package. The 75 V rating and HSOF-8 footprint of IPP052NE7N3GHKSA1 require layout revision, gate drive tuning, and thermal validation before substitution.

IPP052NE7N3GHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.2mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 91µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4750 pF @ 37.5 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP052NE7N3GHKSA1 FAQ

1.How can I place an order for IPP052NE7N3GHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP052NE7N3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP052NE7N3GHKSA1 reliable?

The price and inventory of IPP052NE7N3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP052NE7N3GHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP052NE7N3GHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP052NE7N3GHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP052NE7N3GHKSA1?

IPP052NE7N3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP052NE7N3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP052NE7N3GHKSA1?

For technical support, including IPP052NE7N3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP052NE7N3GHKSA1 requirements.

6.How does Aetrix verify that IPP052NE7N3GHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP052NE7N3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP052NE7N3GHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP052NE7N3GHKSA1?

All IPP052NE7N3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP052NE7N3GHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP052NE7N3GHKSA1 part is unused and in its original packaging.

Return procedure for IPP052NE7N3GHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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