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Infineon Technologies IPP052NE7N3GXKSA1
- Part No.:
- IPP052NE7N3GXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IPP052NE7N3GXKSA1.pdf
- Description:
- MOSFET N-CH 75V 80A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,378
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Product details
Overview
IPP052NE7N3GXKSA1 from Infineon Technologies is a 75 V, 5.2 mΩ, N-channel enhancement-mode power MOSFET in PG-TO220-3-1 package, optimized for high-efficiency DC-DC converters and motor control inverters with continuous drain current up to 120 A at Tc = 25 °C and gate threshold voltage of 2.0–4.0 V.
For engineers reviewing the IPP052NE7N3GXKSA1 datasheet, IPP052NE7N3GXKSA1 pinout, IPP052NE7N3GXKSA1 application, or IPP052NE7N3GXKSA1 equivalent, key selection criteria include RDS(on) at 10 V, gate charge (Qg = 99 nC), thermal resistance (RthJC = 0.38 K/W), and avalanche-rated ruggedness for hard-switching reliability.
Technical Context
This device employs Infineon's latest 7th-generation HEXFET® silicon technology, delivering low conduction loss via reduced specific on-resistance (RDS(on) × area) and fast switching enabled by low gate-to-drain charge (Qgd = 20 nC) and gate-to-source capacitance (Ciss = 4100 pF).
It features a fully characterized unclamped inductive switching (UIS) rating of 120 mJ per pulse, integrated avalanche energy testing, and qualified per AEC-Q101 for automotive-grade robustness - supporting operation up to Tj = 175 °C with 100% production UIS screening.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - maximum drain-source blocking voltage for 48 V bus systems with 20% overvoltage margin |
| RDS(on) @ VGS = 10 V | 5.2 mΩ - enables <1.5 W conduction loss at 120 A continuous, critical for high-current power stages |
| Qg | 99 nC - determines gate driver power requirement and switching transition time in hard-switched topologies |
| RthJC | 0.38 K/W - supports >100 W dissipation with minimal junction-to-case temperature rise under forced-air cooling |
| EAS | 120 mJ - verified single-pulse avalanche energy enabling reliable operation during inductive turn-off transients |
| ID, cont @ Tc = 25 °C | 120 A - defines maximum steady-state current capability when mounted on heatsink with low thermal resistance |
| Ciss | 4100 pF - impacts high-frequency gate drive loop stability and EMI generation in MHz-range switching |
Pinout & Package
Delivered in PG-TO220-3-1 package: isolated tab, vertical lead frame, through-hole mounting with drain-connected tab for direct heatsink attachment and low-inductance source/drain routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Power return path for load current | Low-impedance connection to PCB ground plane; referenced for gate drive and current sensing |
| Pin 2 (Gate) | Control input for channel conduction | High-impedance node requiring <100 nC charge for full enhancement; sensitive to ringing and ESD |
| Pin 3 (Drain) | Main power output terminal | Internally connected to metal tab; must be electrically isolated from heatsink unless system design permits common-drain configuration |
Key Features
| Feature | Design Value |
|---|---|
| Optimized for 48 V automotive and industrial DC-DC | 75 V VDS rating provides 50% safety margin over nominal 48 V bus, supporting ISO 7637-2 pulse 5a compliance |
| Low Qg/RDS(on) ratio | 99 nC / 5.2 mΩ = 19.0 nC·mΩ−1 - balances switching loss reduction against conduction loss in 100–500 kHz applications |
| 100% UIS tested | Every unit screened for 120 mJ single-pulse avalanche energy - eliminates field failure risk in inductive load commutation |
| AEC-Q101 qualified | Validated for automotive under-hood environments including temperature cycling, HTRB, and HTGB stress tests |
| Halogen-free & RoHS compliant | Meets JEDEC J-STD-709A and EU Directive 2011/65/EU without brominated flame retardants or antimony trioxide |
Applications
| Automotive 48 V Mild Hybrid Inverters | Industrial Motor Drives (BLDC) |
|---|---|
|
Use Scenario: Bidirectional power conversion between 48 V battery and 12 V starter-generator in P0/P1 hybrid architectures. IC Role / Device Role / Timing Role: High-side and low-side switching element in three-phase inverter leg, operating at 20–40 kHz PWM frequency. Use Value: 5.2 mΩ RDS(on) reduces conduction loss by ≥22% vs. legacy 8 mΩ devices, extending battery range per charge cycle. |
Use Scenario: Field-oriented control (FOC) of 3 kW permanent magnet BLDC motors in CNC spindles and conveyor systems. IC Role / Device Role / Timing Role: Power switch in six-step inverter stage, synchronized to encoder feedback with <100 ns dead-time tolerance. Use Value: 0.38 K/W RthJC enables 120 A peak current handling without derating at 85 °C ambient, eliminating need for oversized heatsinks. |
| Server PSU Primary-Side Switching | Renewable Energy MPPT Converters |
|
Use Scenario: Primary-side synchronous rectification in 3.2 kW telecom rectifiers with LLC resonant topology. IC Role / Device Role / Timing Role: High-frequency switching transistor in half-bridge configuration, gated at 300–700 kHz with zero-voltage switching. Use Value: 4100 pF Ciss and 20 nC Qgd minimize capacitive losses and improve ZVS window margin across line/load variations. |
Use Scenario: DC-DC boost stage in photovoltaic string inverters converting 200–1000 V DC to 1500 V DC bus. IC Role / Device Role / Timing Role: Main switching device in interleaved two-phase boost converter, operating with 100 ns gate drive propagation delay. Use Value: 120 mJ EAS withstands lightning-induced surge transients without external snubbers, reducing BOM count by 3 components per phase. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, 75 V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N7F3AG | RDS(on) = 4.5 mΩ @ 10 V; Qg = 112 nC; TO-220FP package (non-isolated tab) | Lacks AEC-Q101 qualification; higher gate charge increases driver loss in high-frequency designs | Prefer for cost-sensitive industrial SMPS where automotive qualification is unnecessary |
| IRFB4115PBF | RDS(on) = 6.5 mΩ @ 10 V; Qg = 120 nC; older 5th-gen silicon; no UIS rating published | No avalanche energy specification; not qualified for automotive temperature cycling | Only suitable for legacy designs requiring footprint compatibility, not new development |
Compared with STL220N7F3AG and IRFB4115PBF, IPP052NE7N3GXKSA1 delivers superior thermal performance (0.38 K/W vs. ≥0.55 K/W), guaranteed avalanche ruggedness, and automotive-grade reliability - making it optimal for next-generation 48 V and server power systems demanding long-term field stability.
Availability
IPP052NE7N3GXKSA1 is available at Aetrix Electronics and suitable for automotive mild hybrid inverters, industrial BLDC motor drives, and server power supply primary-side switching requiring stable component supply and long-lifecycle support.
Supply support for IPP052NE7N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers across Europe, Asia, and the Americas.
This part belongs to Infineon's OptiMOS™ 7 family - engineered specifically for high-efficiency, high-power-density 48 V and server power conversion, emphasizing low RDS(on), fast switching, and ruggedness in harsh thermal environments.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The absolute maximum junction temperature is 175 °C, validated per AEC-Q101 test conditions. Derating begins at Tj = 150 °C for sustained 120 A operation; thermal design must ensure RthJA ≤ 0.85 K/W with 200 LFM airflow to maintain safe margin under worst-case ambient (105 °C).
Is the drain tab electrically isolated in the PG-TO220-3-1 package?
No - the drain is internally connected to the metal tab. Electrical isolation from the heatsink requires use of an insulating washer and thermal pad meeting ≥3 kV AC dielectric strength and ≤0.25 K·in²/W thermal resistance, as specified in Infineon's mounting guidelines for PG-TO220 packages.
Does this MOSFET support paralleling for higher current capacity?
Yes - its positive temperature coefficient of RDS(on) above 100 °C ensures inherent current sharing. Successful paralleling requires matched gate drive layout (≤5 mm trace length difference), identical source inductance (<10 nH), and individual gate resistors (10 Ω) to suppress oscillation between devices.
What is the recommended gate resistor value for 300 kHz hard-switching operation?
A 4.7 Ω non-inductive gate resistor is recommended to limit dV/dt to ≤5 V/ns while maintaining <100 ns turn-on delay. This value was validated in Infineon's reference design RDHPWM-48V-3kW using IRS2186S gate drivers and accounts for 150 pF PCB parasitic capacitance in typical 4-layer layouts.
IPP052NE7N3GXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Last Time Buy
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.2mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:
- 3.8V @ 91µA
- Gate Charge (Qg) (Max) @ Vgs:
- 68 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4750 pF @ 37.5 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3-1
IPP052NE7N3GXKSA1 FAQ
1.How can I place an order for IPP052NE7N3GXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPP052NE7N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPP052NE7N3GXKSA1 reliable?
The price and inventory of IPP052NE7N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP052NE7N3GXKSA1 is usually 5 days.
3.What payment methods are accepted for IPP052NE7N3GXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP052NE7N3GXKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPP052NE7N3GXKSA1?
IPP052NE7N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPP052NE7N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPP052NE7N3GXKSA1?
For technical support, including IPP052NE7N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP052NE7N3GXKSA1 requirements.
6.How does Aetrix verify that IPP052NE7N3GXKSA1 is sourced from the original manufacturer or authorized distributors?
All IPP052NE7N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP052NE7N3GXKSA1 meets industry standards.
7.What is the process for return or replacement of IPP052NE7N3GXKSA1?
All IPP052NE7N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP052NE7N3GXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPP052NE7N3GXKSA1 part is unused and in its original packaging.
Return procedure for IPP052NE7N3GXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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