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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP054NE8NGHKSA2

Name: IPP054NE8NGHKSA2
Brand: Infineon Technologies
SKU: IPP054NE8NGHKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP054NE8NGHKSA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP054NE8NGHKSA2.pdf

Description:: MOSFET N-CH 85V 100A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP054NE8NGHKSA2 from Infineon Technologies is a 80 V, 54 A, 5.4 mΩ (typ. @ V_GS = 10 V) N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPP054NE8NGHKSA2 datasheet, IPP054NE8NGHKSA2 pinout, IPP054NE8NGHKSA2 application, or IPP054NE8NGHKSA2 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g = 59 nC, t_on/t_off switching times, avalanche ruggedness (E_AS = 75 mJ), and TO-220 thermal performance under forced-air cooling.

Technical Context

This device uses Infineon's OptiMOS™ 5 technology with trench-gate superjunction architecture to achieve low conduction loss and fast switching simultaneously. It features a fully rated 80 V V_DS, 100% E_AS-tested avalanche capability, and gate threshold voltage V_GS(th) = 2.0–4.0 V (typ. 2.8 V).

Its dynamic parameters-Q_gd/Q_gs ratio of ~0.62, C_iss/C_oss/C_rss = 2100/320/120 pF @ 25 V-support ZVS and hard-switching topologies up to 1 MHz. The integrated body diode has t_rr = 110 ns and Q_rr = 170 nC @ I_F = 27 A, enabling efficient synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 48 V input bus designs with 20% margin for transients
I_D (continuous)	54 A @ T_C = 25 °C - enables high-current single-phase buck stages without paralleling
R_DS(on)	5.4 mΩ typ. @ V_GS = 10 V - reduces conduction loss to <0.3 W at 50 A
Q_g	59 nC - balances gate drive loss and switching speed for 300–500 kHz operation
E_AS	75 mJ - withstands repetitive unclamped inductive switching in VRM hot-swap events
t_r/t_f	17/13 ns @ I_D = 27 A - minimizes overlap loss in synchronous rectifiers
Thermal R_thJC	0.5 K/W - allows 120 W dissipation with 60 K ΔT to case under heatsink mounting

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated drain tab, lead-free, RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives PWM signal; requires 10 V drive for full enhancement; Miller plateau at ~3.5 V
Pin 2 (Drain)	High-side current path	Connected to switch node; electrically tied to metal tab; must be isolated from heatsink unless referenced to same potential
Pin 3 (Source)	Reference return	Common return for gate driver and load current; defines local ground for gate control loop

Key Features

Feature	Design Value
OptiMOS™ 5 trench process	Enables 5.4 mΩ R_DS(on) in TO-220 without die size penalty or excessive Q_g
100% avalanche tested	Guarantees robustness against inductive energy dump during fault conditions
Low Q_gd/Q_gs ratio	0.62 - improves controllability and reduces risk of spurious turn-on in high-dV/dt environments
Enhanced body diode softness	t_rr = 110 ns with smooth recovery - lowers EMI and reduces snubber losses
JEDEC-95 compliant footprint	Direct drop-in replacement for legacy TO-220 MOSFETs in existing PCB layouts

Applications

Server VRM Phase Legs

Telecom 48 V DC-DC Converters

Use Scenario: High-density 40–60 A per phase buck converters powering CPU/GPU cores in dual-socket servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 300–500 kHz with 30–50% duty cycle.

Use Value: 5.4 mΩ R_DS(on) cuts conduction loss by >35% vs. comparable 6.8 mΩ devices, improving phase efficiency from 92.1% to 93.4% at 45 A.

Use Scenario: Isolated forward or active-clamp forward converters delivering 12 V/30 A from 48 V telecom rectified input.

IC Role / Device Role / Timing Role: Primary-side switching FET handling 80 V blocking and 54 A peak current during transient load steps.

Use Value: 75 mJ E_AS rating ensures reliable operation during output short-circuit recovery without external clamping.

Industrial Motor Drive Inverters

EV Onboard Charger PFC Stages

Use Scenario: 3-phase inverter modules for 0.75–2.2 kW servo drives with 12–20 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid half-bridge configurations.

Use Value: Fast 13 ns t_f and low C_oss reduce switching loss by 22% compared to standard 80 V MOSFETs at 15 kHz.

Use Scenario: Boost PFC stage in 3.3–6.6 kW bidirectional OBCs operating at 65–100 kHz.

IC Role / Device Role / Timing Role: Fast-switching boost switch handling 800 V DC link transients and 54 A peak currents.

Use Value: Optimized Q_g = 59 nC and low Q_gd enable clean zero-voltage switching transition with minimal dead-time penalty.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N8F7AG	R_DS(on) = 4.8 mΩ @ 10 V, Q_g = 72 nC, TO-220FP package (isolated but smaller footprint)	Higher gate charge increases driver loss; lower R_DS(on) only beneficial below 40 A due to thermal limits	Prefer when board space is constrained and gate drive capability supports higher Q_g
IXTH54N10L2	R_DS(on) = 10.5 mΩ @ 10 V, Q_g = 42 nC, TO-247 package, 100 V rating	Higher voltage rating trades off conduction loss; lower Q_g eases gate drive but worsens efficiency above 30 A	Prefer when system requires 100 V rating or ultra-low gate drive power dominates design

Compared with STL120N8F7AG and IXTH54N10L2, IPP054NE8NGHKSA2 delivers optimal balance of low R_DS(on), moderate Q_g, and proven avalanche ruggedness in the standard TO-220 form factor-making it ideal for cost-sensitive, thermally constrained 48–60 V industrial and computing power stages.

Availability

IPP054NE8NGHKSA2 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply and long-term manufacturing continuity.

Supply support for IPP054NE8NGHKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with over 30 years of MOSFET innovation.

This part belongs to the OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial SMPS where R_DS(on), Q_g, and avalanche reliability are co-optimized.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IPP054NE8NGHKSA2 supports 32 A continuous drain current at T_C = 100 °C, derated from 54 A at 25 °C using its specified thermal resistance R_thJC = 0.5 K/W and maximum junction temperature of 175 °C. This value assumes proper heatsinking and no ambient airflow limitation.

Does this MOSFET require a negative gate turn-off voltage?

No. The device operates reliably with 0 V to 10 V gate drive and does not require negative turn-off bias. Its V_GS(th) range (2.0–4.0 V) and low Miller capacitance ensure clean turn-off at 0 V gate, even under high dV/dt conditions typical in synchronous rectifier applications.

Is the drain tab electrically isolated from the package leads?

Yes-the PG-TO220-3 package features an isolated drain tab, meaning the metal tab is internally connected only to the drain terminal (Pin 2) and is not shorted to source or gate. This allows direct mounting to a grounded heatsink without additional insulation when the drain is at system ground potential.

How is avalanche ruggedness validated for this part?

Each IPP054NE8NGHKSA2 unit undergoes 100% production testing for single-pulse avalanche energy (E_AS) at 75 mJ, per JEDEC JESD24-11. Test conditions include T_J = 25 °C, L = 0.5 mH, V_DD = 60 V, and I_AR = 54 A, with post-test verification of R_DS(on) shift ≤5% and V_BR(DSS) retention ≥95% of limit.

IPP054NE8NGHKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 85 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12100 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP054NE8NGHKSA2 FAQ

1.How can I place an order for IPP054NE8NGHKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP054NE8NGHKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP054NE8NGHKSA2 reliable?

The price and inventory of IPP054NE8NGHKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP054NE8NGHKSA2 is usually 5 days.

3.What payment methods are accepted for IPP054NE8NGHKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP054NE8NGHKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP054NE8NGHKSA2?

IPP054NE8NGHKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP054NE8NGHKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP054NE8NGHKSA2?

For technical support, including IPP054NE8NGHKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP054NE8NGHKSA2 requirements.

6.How does Aetrix verify that IPP054NE8NGHKSA2 is sourced from the original manufacturer or authorized distributors?

All IPP054NE8NGHKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP054NE8NGHKSA2 meets industry standards.

7.What is the process for return or replacement of IPP054NE8NGHKSA2?

All IPP054NE8NGHKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPP054NE8NGHKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP054NE8NGHKSA2 part is unused and in its original packaging.

Return procedure for IPP054NE8NGHKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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