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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP055N03LGXKSA1

Name: IPP055N03LGXKSA1
Brand: Infineon Technologies
SKU: IPP055N03LGXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP055N03LGXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP055N03LGXKSA1.pdf

Description:: MOSFET N-CH 30V 50A TO220-3

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Product details

Overview

IPP055N03LGXKSA1 from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO220-3-1 package, rated for 30 V V_DS, 5.5 mΩ R_DS(on) at V_GS = 10 V, and 50 A continuous drain current at T_C = 25 °C. It features avalanche rating, low gate charge (Q_g = 31 nC), and optimized FOM for high-efficiency DC/DC converters and synchronous rectification.

For engineers reviewing the IPP055N03LGXKSA1 datasheet, IPP055N03LGXKSA1 pinout, IPP055N03LGXKSA1 application, or IPP055N03LGXKSA1 equivalent, key selection criteria include R_DS(on) vs. gate drive voltage, switching loss trade-offs in hard-switched SMPS, thermal resistance (R_thJC = 2.2 K/W), and diode Q_rr (20 nC) for synchronous FET replacement.

Technical Context

This MOSFET employs Infineon's OptiMOS™3 technology, delivering a gate threshold voltage (V_GS(th)) of 1–2.2 V and excellent R_DS(on) × Q_g figure-of-merit for high-frequency operation. Its low 4.6 mΩ typical R_DS(on) at 10 V and 6.2 mΩ at 4.5 V enables efficient operation with standard logic-level drivers.

The device supports robust unclamped inductive switching with 60 mJ single-pulse avalanche energy and exhibits stable dynamic characteristics: C_iss = 2400–3200 pF, C_oss = 920–1200 pF, and t_r/t_f = 5.2 ns / 4.0 ns under defined test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input rail applications
R_DS(on) max	5.5 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 50 A
I_D cont.	50 A at T_C = 25 °C - Requires heatsink for sustained full-load operation
Q_g	31 nC at V_DD = 15 V, I_D = 30 A - Determines gate driver current demand and switching speed
E_AS	60 mJ - Supports reliable operation under unclamped inductive load transients
Q_rr	20 nC - Critical for minimizing reverse recovery loss in synchronous buck topologies
R_thJC	2.2 K/W - Enables direct thermal path to heatsink via drain tab

Pinout & Package

Package: PG-TO220-3-1 - Through-hole, isolated drain tab, 3-pin vertical mounting with screw-hole compatibility. Drain connected to metal tab for thermal and electrical conduction.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path
Pin 2 (Gate)	Control input	Logic-level compatible (1–2.2 V threshold); requires <1 Ω series resistance for ringing suppression
Pin 3 (Drain)	Power output / high-side switch node	Internally bonded to metal tab; must be electrically isolated and thermally coupled to heatsink

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate boosters in 5 V or 3.3 V control systems
Avalanche-rated	60 mJ single-pulse E_AS - ensures ruggedness in flyback, LLC, and motor drive inductive turn-off events
Low Q_g × R_DS(on) FOM	31 nC × 5.5 mΩ = 170.5 - benchmark for high-frequency, high-efficiency SMPS design
Optimized body diode	Q_rr = 20 nC, V_SD = 0.88–1.1 V - reduces cross-conduction loss and EMI in synchronous rectification

Applications

Server VRMs

Industrial DC/DC Converters

Use Scenario: 12 V input to 0.8–1.8 V output point-of-load regulation for CPU/GPU cores.

IC Role / Device Role / Timing Role: High-side synchronous FET in multiphase buck converter; switched at 500 kHz–1 MHz.

Use Value: 5.5 mΩ R_DS(on) and 31 nC Q_g minimize combined conduction and switching losses, enabling >95% efficiency at 30 A per phase.

Use Scenario: Isolated 48 V to 12 V intermediate bus converter in PLC and motion control systems.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or half-bridge topology.

Use Value: Avalanche rating and 2.2 K/W R_thJC ensure reliability under transient overloads and ambient temperatures up to 85 °C.

Telecom Rectifiers

Automotive DC/DC Modules

Use Scenario: Secondary-side synchronous rectifier in 48 V telecom rectifier modules.

IC Role / Device Role / Timing Role: Low-side FET replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: 20 nC Q_rr and 0.88 V V_SD reduce reverse recovery loss and forward drop, improving full-load efficiency by ~1.2% vs. 40 V Schottky.

Use Scenario: 12 V battery-to-5 V/3.3 V conversion in ADAS camera and radar ECUs.

IC Role / Device Role / Timing Role: High-efficiency buck switch operating in automotive temperature range (−40 to 150 °C junction).

Use Value: Stable R_DS(on) (≤7.8 mΩ at 125 °C) and JEDEC-qualified reliability support ASIL-B functional safety requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB055N03LG	Same die, PG-TO263-3 surface-mount package; R_thJA = 40 K/W on 6 cm² PCB	Better suited for automated SMT assembly and space-constrained layouts	Select for volume production where reflow capability and board density outweigh through-hole serviceability
IRL3803PBF	Higher R_DS(on) (8.0 mΩ), higher Q_g (42 nC), TO-220AB package, non-avalanche rated	Lacks E_AS rating and has inferior FOM; limited to low-stress, low-frequency SMPS	Only consider if cost sensitivity outweighs efficiency, thermal, and ruggedness requirements

Compared with IPB055N03LG, IPP055N03LGXKSA1 offers identical electrical performance but superior mechanical mounting and thermal interface via TO220-3-1's isolated drain tab. Versus IRL3803PBF, it delivers 31% lower conduction loss, 26% lower gate charge, and guaranteed avalanche capability-critical for industrial and telecom reliability.

Availability

IPP055N03LGXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and automotive DC/DC modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPP055N03LGXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™3 power transistor product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing, telecom, and industrial power supplies.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V, but continuous operation above ±16 V risks gate oxide degradation. For optimal lifetime and stability, keep V_GS within 0–12 V during normal switching, with transient spikes clamped below ±15 V using Zener protection.

Can IPP055N03LGXKSA1 be used as a synchronous rectifier in a 48 V to 12 V LLC converter?

Yes - its 30 V V_DS, 20 nC Q_rr, and 0.88 V V_SD make it suitable for secondary-side synchronous rectification in 48 V input LLC designs. Ensure gate drive timing avoids shoot-through and that layout minimizes source inductance to preserve fast turn-on.

How does thermal resistance change when mounted without a heatsink?

Without a heatsink, R_thJA exceeds 62 K/W on minimal footprint PCB, limiting continuous I_D to <10 A at 25 °C ambient. The 2.2 K/W R_thJC only applies when the drain tab is directly attached to a heatsink - unmounted operation violates safe operating area limits.

Is this MOSFET suitable for linear-mode (saturation) operation?

No - it is optimized for switching applications. Linear-mode use causes localized hot-spot formation due to uneven current distribution across the die, leading to premature failure. Its SOA curve shows strict pulse-width and voltage limits outside switching duty cycles.

IPP055N03LGXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3200 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP055N03LGXKSA1 FAQ

1.How can I place an order for IPP055N03LGXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP055N03LGXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP055N03LGXKSA1 reliable?

The price and inventory of IPP055N03LGXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP055N03LGXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP055N03LGXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP055N03LGXKSA1 transactions.

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4.How is shipping managed for IPP055N03LGXKSA1?

IPP055N03LGXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP055N03LGXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP055N03LGXKSA1?

For technical support, including IPP055N03LGXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP055N03LGXKSA1 requirements.

6.How does Aetrix verify that IPP055N03LGXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP055N03LGXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP055N03LGXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP055N03LGXKSA1?

All IPP055N03LGXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP055N03LGXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP055N03LGXKSA1 part is unused and in its original packaging.

Return procedure for IPP055N03LGXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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