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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP057N06N3GXKSA1

Name: IPP057N06N3GXKSA1
Brand: Infineon Technologies
SKU: IPP057N06N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP057N06N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP057N06N3GXKSA1.pdf

Description:: MOSFET N-CH 60V 80A TO220-3

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Product details

Overview

IPP057N06N3GXKSA1 from Infineon Technologies is a 60 V, 90 A, 5.7 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-efficiency DC-DC converters and motor control stages with low gate charge (Q_g = 48 nC) and fast switching (t_on = 18 ns). It operates at T_j ≤ 175 °C and supports avalanche-rated ruggedness up to 100 mJ.

For engineers reviewing the IPP057N06N3GXKSA1 datasheet, IPP057N06N3GXKSA1 pinout, IPP057N06N3GXKSA1 application, or IPP057N06N3GXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, gate threshold voltage consistency across -55 °C to 175 °C, SOA compliance at 100 µs pulse width, and TO-220 thermal resistance (R_thJC = 0.65 K/W).

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology with trench-gate process, delivering reduced specific on-resistance and improved figure-of-merit (R_DS(on) × Q_g). Its gate threshold voltage (V_GS(th) = 2.0–3.0 V) enables direct drive from 3.3 V logic controllers without level-shifting.

Designed for hard-switched topologies, it features fully characterized dynamic parameters including C_iss = 2700 pF, C_oss = 620 pF, and Q_gd/Q_gs ratio of 0.17 - critical for minimizing Miller-induced shoot-through in half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 48 V bus systems with 20 % margin
R_DS(on) @ T_j = 25 °C	5.7 mΩ - Enables <1.5 W conduction loss at 18 A RMS in 12 V/200 W buck converter
I_D (continuous)	90 A - Rated for PCB-mount operation with 10 cm² copper area and 1 mm thickness
Q_g	48 nC - Supports 500 kHz switching with <1 W gate driver power at 12 V supply
E_AS	100 mJ - Avalanche energy rating verified per JEDEC JESD24-11, enabling unclamped inductive switching
R_thJC	0.65 K/W - Thermal resistance from junction to case, defining heatsink sizing for 120 W dissipation
V_GS(th)	2.0–3.0 V - Ensures reliable turn-on with standard microcontroller GPIO outputs

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free plating, RoHS compliant).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to metal tab - must be mounted to heatsink with electrically insulating thermal pad
Source	Reference node for gate drive and current sensing	Low-inductance connection point for shunt resistor placement and gate return path
Gate	Control terminal for channel modulation	High-impedance input requiring <100 Ω series resistor to suppress ringing during fast edge transitions

Key Features

Feature	Design Value
Optimized gate charge ratio	Q_gd/Q_gs = 0.17 - reduces risk of false turn-on during high dV/dt commutation events
Temperature-stable R_DS(on)	+0.55 %/°C coefficient - ensures predictable conduction loss rise from 25 °C to 175 °C
Avalanche-rated operation	Single-pulse E_AS = 100 mJ - eliminates need for external snubbers in relay driving and solenoid control
Low Crss/Ciss ratio	0.07 - improves controllability in synchronous rectification and ZVS applications
Qualified per AEC-Q101	Stress-tested for automotive under-hood environments - validated at T_j = 175 °C, 1000 cycles

Applications

Automotive Body Control Module

Industrial DC Motor Drive

Use Scenario: Driving 12 V brushed DC motors in seat positioners and window lifters with PWM at 20 kHz.

IC Role / Device Role / Timing Role: High-side switch controlling motor direction and speed via duty-cycle modulation.

Use Value: 5.7 mΩ R_DS(on) limits I²R loss to <1.2 W at 15 A peak, reducing thermal derating in sealed enclosures.

Use Scenario: Half-bridge output stage in 24 V servo amplifier with 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Low-side switching element synchronized to complementary high-side gate signal.

Use Value: 48 nC total gate charge enables clean 10 ns rise/fall edges with 1 A gate driver, minimizing overlap losses.

Server PSU Primary Switch

EV Onboard Charger (OBC) PFC Stage

Use Scenario: Primary-side switch in 48 V/800 W LLC resonant converter operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-assisted main switch with body diode recovery management.

Use Value: 620 pF C_oss and 100 mJ E_AS ensure robust dead-time handling and fault tolerance during resonance collapse.

Use Scenario: Boost switch in 3-phase PFC front-end handling 6.6 kW AC input at 16 kHz.

IC Role / Device Role / Timing Role: Hard-switched boost transistor managing 30 A average inductor current.

Use Value: 0.65 K/W R_thJC allows 120 W continuous dissipation with 15 K/W heatsink, eliminating forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB054N06N3 G	R_DS(on) = 5.4 mΩ @ 25 °C; Q_g = 52 nC; same PG-TO220-3 package	Slightly lower conduction loss but higher gate drive energy - less suitable for >300 kHz operation	Prefer when thermal margin is constrained but switching frequency ≤ 200 kHz
STP90NF06L	R_DS(on) = 7.5 mΩ; Q_g = 95 nC; TO-220AB package; logic-level V_GS(th) = 1–2.5 V	Higher gate charge increases driver losses; wider V_GS(th) tolerance risks inconsistent turn-on at low V_GS	Select only if legacy design requires pin-for-pin replacement with relaxed efficiency targets

Compared with IPB054N06N3 G, IPP057N06N3GXKSA1 trades 0.3 mΩ higher R_DS(on) for 4 nC lower Q_g, improving high-frequency efficiency; versus STP90NF06L, it delivers 24 % lower conduction loss and 49 % lower gate energy, enabling smaller gate drivers and tighter thermal design.

Availability

IPP057N06N3GXKSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, and server power supplies requiring stable component supply and long-term lifecycle support.

Supply support for IPP057N06N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This device belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered for high-power-density switching applications where low R_DS(on), fast switching, and rugged avalanche performance are essential.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, validated per AEC-Q101 stress testing. Continuous operation at this limit requires thermal design ensuring R_thJA ≤ 1.1 K/W with 25 °C ambient and ≥10 cm² 2 oz copper, or use of active cooling. Derating curves in Figure 4 of the datasheet define safe current vs. case temperature.

Is the drain tab electrically isolated from the source pin?

No - the drain is internally connected to the metal tab. The PG-TO220-3 package has no electrical isolation between drain and tab. Mounting requires an electrically insulating thermal interface material (e.g., silicone pad or ceramic washer) when heatsink grounding differs from drain potential.

Does this MOSFET support paralleling for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) (+0.55 %/°C) enables stable current sharing. Successful paralleling requires matched gate drive impedance (<5 Ω difference), symmetrical PCB layout, and individual gate resistors (≥10 Ω) to damp oscillation. Thermal coupling between devices must be minimized to avoid thermal runaway.

What is the recommended gate resistor value for 200 kHz hard-switching?

A 10 Ω non-inductive gate resistor is recommended for 200 kHz operation with a 1 A peak gate driver. This value balances switching speed (t_on/t_off ≈ 25 ns) against gate ringing suppression and EMI control. Lower values increase dV/dt stress; higher values raise switching losses beyond 0.8 W at full load.

IPP057N06N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 58µA

Gate Charge (Qg) (Max) @ Vgs:: 82 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6600 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP057N06N3GXKSA1 FAQ

1.How can I place an order for IPP057N06N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP057N06N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP057N06N3GXKSA1 reliable?

The price and inventory of IPP057N06N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP057N06N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP057N06N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP057N06N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP057N06N3GXKSA1?

IPP057N06N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP057N06N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP057N06N3GXKSA1?

For technical support, including IPP057N06N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP057N06N3GXKSA1 requirements.

6.How does Aetrix verify that IPP057N06N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP057N06N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP057N06N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP057N06N3GXKSA1?

All IPP057N06N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP057N06N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP057N06N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPP057N06N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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