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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP057N08N3GHKSA1

Name: IPP057N08N3GHKSA1
Brand: Infineon Technologies
SKU: IPP057N08N3GHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP057N08N3GHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP057N08N3GHKSA1.pdf

Description:: MOSFET N-CH 80V 80A TO220-3

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Product details

Overview

IPP057N08N3GHKSA1 from Infineon Technologies is a 80 V, 90 A, 5.7 mΩ N-channel enhancement-mode power MOSFET in PG-TO263-3 (D²-Pak) package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPP057N08N3GHKSA1 datasheet, IPP057N08N3GHKSA1 pinout, IPP057N08N3GHKSA1 application, or IPP057N08N3GHKSA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g of 42 nC, t_on/t_off timing, thermal resistance (R_thJC = 0.6 K/W), and avalanche ruggedness rating (E_AS = 210 mJ).

Technical Context

This device employs Infineon's OptiMOS™ 3 technology with trench-gate structure to achieve low conduction loss and fast switching. It features a fully characterized body diode with t_rr = 45 ns and Q_rr = 55 nC at I_F = 45 A, enabling efficient hard-switched and synchronous rectifier operation.

The MOSFET supports gate drive voltages from 0 V to 20 V, with V_GS(th) specified between 2.0 V and 4.0 V, and exhibits stable R_DS(on) over temperature (±20% variation from −55 °C to 175 °C). Its SOA is defined up to 100 µs single-pulse, supporting robust transient handling in power stage designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum drain-source blocking voltage; supports 48 V input bus systems with 20% derating margin.
R_DS(on) @ V_GS = 10 V	5.7 mΩ - Low on-resistance enables <1.5 W conduction loss at 90 A DC, critical for high-efficiency VRMs.
I_D (continuous)	90 A - Rated drain current at T_C = 25 °C; usable up to 60 A at T_C = 100 °C per SOA curve.
Q_g	42 nC - Total gate charge determines driver strength requirement; enables 500 kHz+ switching with standard gate drivers.
R_thJC	0.6 K/W - Junction-to-case thermal resistance; allows 120 W power dissipation with 72 K ΔT to heatsink.
E_AS	210 mJ - Single-pulse avalanche energy rating; ensures reliability during inductive turn-off transients in non-clamped topologies.
t_r/t_f	12 ns / 10 ns - Fast rise/fall times minimize switching losses in hard-switched converters.

Pinout & Package

Package: PG-TO263-3 (D²-Pak), surface-mount, isolated heatsink tab (drain-connected), RoHS-compliant, lead-free plating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path; carries full load current.
Pin 2 (Gate)	Control input	High-impedance MOSFET control node; requires 10–15 V drive for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Power output / Heatsink tab	High-current drain connection; electrically tied to exposed copper tab for thermal conduction and electrical isolation from PCB.

Key Features

Feature	Design Value
OptiMOS™ 3 trench technology	Enables 5.7 mΩ R_DS(on) at 80 V rating-30% lower than prior-generation equivalents for same die size.
Qualified per JEDEC JESD47	Validated for 1000-cycle temperature cycling (−55 °C to 150 °C), ensuring reliability in industrial and telecom environments.
Enhanced body diode softness	Q_rr = 55 nC with soft recovery (t_rr = 45 ns); reduces EMI and voltage overshoot in synchronous rectifier applications.
175 °C maximum junction temperature	Supports operation in high-ambient environments (e.g., enclosed server chassis) without derating below 150 °C ambient.

Applications

Server Voltage Regulator Modules

Telecom DC-DC Converters

Use Scenario: High-density 48 V to 1 V/100 A point-of-load conversion in AI accelerator cards.

IC Role / Device Role: Synchronous rectifier in multiphase buck converter; operates in continuous conduction mode with 500 kHz switching.

Use Value: 5.7 mΩ R_DS(on) and 42 nC Q_g enable >95% efficiency at full load while minimizing thermal footprint.

Use Scenario: Isolated 48 V to 12 V intermediate bus converter in 5G base station power shelves.

IC Role / Device Role: Primary-side switch in active clamp forward topology; handles 80 V blocking and 60 A peak current.

Use Value: 210 mJ E_AS and 0.6 K/W R_thJC ensure robustness against transformer leakage spikes and sustained thermal stress.

Industrial Motor Drives

EV On-Board Chargers

Use Scenario: Half-bridge inverter stage for 3 kW servo drives operating at 20 kHz PWM frequency.

IC Role / Device Role: Low-side switch with integrated freewheeling path; commutates inductive motor current.

Use Value: Body diode t_rr = 45 ns and Q_rr = 55 nC reduce shoot-through risk and switching losses during regeneration.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW AC/DC OBC with LLC resonant topology.

IC Role / Device Role: Output rectifier replacing Schottky diodes; driven by self-synchronized gate signal.

Use Value: 80 V V_DS rating accommodates reflected voltage spikes; 90 A I_D supports peak currents during battery charging transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB054N08N3 G	R_DS(on) = 5.4 mΩ (lower), Q_g = 45 nC (higher), same package and V_DS.	Better conduction loss but higher gate drive demand; may require stronger driver in high-frequency designs.	Select when lowest R_DS(on) dominates over gate charge; verify driver capability and layout parasitics.
IPI057N08N3 G	Same R_DS(on), Q_g, and SOA; differs only in marking and tape/reel packaging (no functional difference).	No application impact; identical electrical and thermal performance across board-level integration.	Use interchangeably where packaging format (reel vs. tube) or traceability requirements differ.

Compared with IPB054N08N3 G, IPP057N08N3GHKSA1 trades 0.3 mΩ higher R_DS(on) for 3 nC lower Q_g, easing gate driver design; versus IPI057N08N3 G, it shares identical silicon and performance-only differing in part marking and logistics coding.

Availability

IPP057N08N3GHKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPP057N08N3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered for high-efficiency, high-frequency power conversion in data center, telecom, and industrial infrastructure applications.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V, but Infineon specifies 10 V as the nominal gate drive for full R_DS(on) specification. Operation above 15 V increases gate oxide stress and accelerates wear-out; 12 V is the practical upper limit for robust long-term use in industrial applications.

Does IPP057N08N3GHKSA1 have an integrated ESD protection diode on the gate?

Yes-it includes built-in gate protection with a rated ESD withstand level of 2 kV (HBM), per JEDEC JS-001. This eliminates need for external gate Zener clamps in most board-level implementations, though layout best practices (short gate traces, local decoupling) remain essential.

Can this MOSFET be used in linear (analog) mode for hot-swap or inrush limiting?

No-it is not characterized or qualified for linear-mode operation. The Safe Operating Area (SOA) graph shows only single-pulse capability down to 10 µs; sustained linear operation risks thermal runaway due to positive temperature coefficient of R_DS(on) and lack of SOA validation beyond 100 µs pulses.

Is the drain tab electrically isolated from the PCB mounting surface?

Yes-the PG-TO263-3 package uses an isolated copper tab: the drain is connected to the tab, but the tab itself is electrically insulated from the PCB via solder mask or thermal pad dielectric. A dedicated thermal interface material must be applied between tab and heatsink; direct PCB copper contact is not permitted without isolation.

IPP057N08N3GHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 69 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4750 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP057N08N3GHKSA1 FAQ

1.How can I place an order for IPP057N08N3GHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP057N08N3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP057N08N3GHKSA1 reliable?

The price and inventory of IPP057N08N3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP057N08N3GHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP057N08N3GHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP057N08N3GHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP057N08N3GHKSA1?

IPP057N08N3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP057N08N3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP057N08N3GHKSA1?

For technical support, including IPP057N08N3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP057N08N3GHKSA1 requirements.

6.How does Aetrix verify that IPP057N08N3GHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP057N08N3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP057N08N3GHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP057N08N3GHKSA1?

All IPP057N08N3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP057N08N3GHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP057N08N3GHKSA1 part is unused and in its original packaging.

Return procedure for IPP057N08N3GHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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