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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP05N03LA

Name: IPP05N03LA
Brand: Infineon Technologies
SKU: IPP05N03LA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP05N03LA

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP05N03LA.pdf

Description:: MOSFET N-CH 25V 80A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:7,228

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Product details

Overview

IPP05N03LA from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in TO-220-3-1 package, rated for 25 V V_DS, 4.6 mΩ R_DS(on) (max) at V_GS = 10 V and I_D = 55 A, with 175 °C maximum junction temperature and dv/dt ruggedness up to 6 kV/µs. It delivers high-efficiency switching in synchronous rectification and high-frequency DC/DC converters.

For engineers reviewing the IPP05N03LA datasheet, IPP05N03LA pinout, IPP05N03LA application, or IPP05N03LA equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), thermal resistance of 1.6 K/W (junction-to-case), and robust avalanche energy rating of 190 mJ under defined test conditions.

Technical Context

This MOSFET employs a trench-based silicon process optimized for low conduction and switching losses in hard-switched topologies. Its logic-level gate drive (V_GS(th) = 1.2–2.0 V typ.) enables direct interface with 3.3 V or 5 V controllers without level-shifting.

The device integrates a fast, low-Q_rr body diode (Q_rr ≤ 10 nC) and exhibits stable R_DS(on) over temperature (±30% drift from 25 °C to 175 °C), supporting reliable operation in thermally constrained industrial and automotive power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage; defines safe operating range in low-voltage buck, boost, and OR-ing applications.
R_DS(on) max	4.6 mΩ @ V_GS = 10 V, I_D = 55 A - Enables <1 W conduction loss at 80 A continuous current with proper heatsinking.
I_D cont	80 A @ T_C = 25 °C - Continuous drain current limited by bondwire; actual usable current depends on PCB thermal design.
E_AS	190 mJ - Single-pulse avalanche energy rating ensures survivability during transient overvoltage events in unclamped inductive switching.
dv/dt rating	6 kV/µs - Confirmed immunity to parasitic turn-on in fast-switching converters with high di/dt and layout-induced coupling.
Q_g total	19–25 nC - Low gate charge supports efficient 500 kHz+ switching with moderate gate driver strength (e.g., 2 A peak).
R_thJC	1.6 K/W - Junction-to-case thermal resistance enables predictable thermal modeling when mounted on standard TO-220 heatsinks.

Pinout & Package

IPP05N03LA uses the P-TO220-3-1 package: insulated case, vertical mounting, three leads with tab-connected drain. Thermal pad is electrically connected to Drain (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Left)	Gate (G)	Control terminal; accepts logic-level input (0–10 V); requires <25 nC total charge for full enhancement.
Pin 2 (Center, Tab)	Drain (D)	Main power output node; electrically tied to metal tab; must be isolated from heatsink unless system ground reference permits.
Pin 3 (Right)	Source (S)	Power return path and gate reference; connects to low-side switch node or controller ground plane.

Key Features

Feature	Design Value
Logic-level gate threshold	V_GS(th) = 1.2–2.0 V enables direct drive from microcontrollers and PWM ICs without gate drivers.
Low R_DS(on) × Q_g FOM	~115 mΩ·nC - Optimized trade-off between conduction and switching loss for high-frequency DC/DC stages.
175 °C rated junction	Supports operation in sealed enclosures or high-ambient environments without derating below full current capability.
dv/dt ruggedness	6 kV/µs rating prevents false turn-on during fast voltage transients in half-bridge or synchronous rectifier configurations.

Applications

Server VRM Power Stage

Automotive DC/DC Converter

Use Scenario: High-current, high-efficiency 12 V → 1.2 V conversion for CPU/GPU core supplies in datacenter servers.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in multiphase buck converter; operates at 300–600 kHz with tight duty-cycle control.

Use Value: 4.6 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 6.5 mΩ devices, improving full-load efficiency by ~1.2% at 100 A.

Use Scenario: 48 V → 12 V bidirectional DC/DC stage in 48 V mild-hybrid vehicle architectures.

IC Role / Device Role / Timing Role: Low-side switch in dual-active-bridge topology; handles 80 A continuous current with forced-air cooling.

Use Value: 175 °C rating and 190 mJ E_AS ensure reliability during load dump transients and cold-crank conditions per ISO 16750-2.

Industrial Motor Drive Inverter

Telecom Rectifier Module

Use Scenario: Three-phase inverter stage for 0.75 kW BLDC motor drives in factory automation equipment.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 60 kHz PWM inverter leg; driven by isolated gate drivers.

Use Value: dv/dt immunity of 6 kV/µs eliminates need for external snubbers in compact PCB layouts with high trace coupling.

Use Scenario: Primary-side synchronous rectifier in 48 V telecom rectifier modules delivering up to 2.5 kW output.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diodes; commutated at 200–400 kHz with zero-voltage switching (ZVS) assist.

Use Value: Q_rr ≤ 10 nC minimizes reverse recovery loss and EMI generation during hard-commutation events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	R_DS(on) = 6.0 mΩ @ 10 V; higher Q_g (34 nC); TO-220AB package with non-insulated tab.	Lacks dv/dt rating and 175 °C rating; not qualified for automotive transients.	Acceptable for cost-sensitive, lower-frequency (<200 kHz) industrial SMPS where thermal margin is ample.
STL110N3LLH6	R_DS(on) = 3.3 mΩ @ 10 V; higher gate charge (32 nC); H2PAK-2 package with enhanced thermal pad.	Superior R_DS(on) but larger footprint and no official dv/dt spec; requires re-layout for TO-220 footprint compatibility.	Preferred for new designs targeting <3 mΩ conduction loss, provided board space and thermal design accommodate H2PAK-2.

Compared with IRL3803PBF and STL110N3LLH6, IPP05N03LA offers the best balance of ruggedness (dv/dt, E_AS, T_j,max), low-loss switching (Q_g × R_DS(on)), and drop-in TO-220 compatibility-making it optimal for high-reliability, high-frequency power stages where layout constraints and transient immunity are critical.

Availability

IPP05N03LA is available at Aetrix Electronics and suitable for server VRMs, automotive DC/DC converters, industrial motor drives, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for IPP05N03LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS®2 family, engineered specifically for high-efficiency, high-frequency power conversion in server, telecom, and automotive applications where low R_DS(on), fast switching, and ruggedness are jointly required.

FAQ

Is IPP05N03LA suitable for synchronous rectification in LLC resonant converters?

Yes. Its low R_DS(on) (4.6 mΩ), fast body diode (Q_rr ≤ 10 nC), and 6 kV/µs dv/dt rating make it suitable for secondary-side synchronous rectification in LLC converters operating up to 500 kHz. Gate drive must be precisely timed to avoid shoot-through, and layout must minimize source inductance to preserve switching speed.

What is the maximum recommended gate resistor for 400 kHz switching?

A 2.7 Ω gate resistor is validated in the datasheet for 40 A switching at 15 V drive (t_r/t_f ≈ 26–38 ns). For 400 kHz operation, this value balances switching loss reduction and EMI control. Lower values (≤1.5 Ω) may be used with robust gate drivers but increase EMI risk and require tighter layout control.

Does IPP05N03LA have AEC-Q101 qualification?

No. IPP05N03LA is not AEC-Q101 qualified. While it meets 175 °C T_j,max and has strong avalanche performance, it lacks the extended reliability testing (HTOL, TC, UHAST) required for automotive powertrain applications. It is approved for automotive infotainment and body electronics where qualification is not mandated.

Can IPP05N03LA replace IPP045N03LG in existing designs?

Yes, with verification. Both share TO-220-3-1 packaging and 25 V rating, but IPP045N03LG has lower R_DS(on) (4.5 mΩ) and higher Q_g (28 nC). IPP05N03LA's slightly higher R_DS(on) (4.6 mΩ) and lower Q_g (25 nC) yield comparable total loss at light-to-moderate loads and improved switching efficiency at high frequency.

IPP05N03LA Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 55A, 10V

Vgs(th) (Max) @ Id:: 2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3110 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP05N03LA FAQ

1.How can I place an order for IPP05N03LA through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP05N03LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP05N03LA reliable?

The price and inventory of IPP05N03LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP05N03LA is usually 5 days.

3.What payment methods are accepted for IPP05N03LA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP05N03LA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP05N03LA?

IPP05N03LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP05N03LA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP05N03LA?

For technical support, including IPP05N03LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP05N03LA requirements.

6.How does Aetrix verify that IPP05N03LA is sourced from the original manufacturer or authorized distributors?

All IPP05N03LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP05N03LA meets industry standards.

7.What is the process for return or replacement of IPP05N03LA?

All IPP05N03LA units undergo pre-shipment inspection (PSI). If there is an issue with IPP05N03LA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP05N03LA part is unused and in its original packaging.

Return procedure for IPP05N03LA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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