Infineon Technologies IPP05N03LB G

Overview

IPP05N03LB G from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO220-3-1 package, rated for 30 V V_DS, 5.3 mΩ R_DS(on) at 10 V V_GS, 80 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature - optimized for high-frequency DC/DC converters in server VRMs and telecom power supplies.

For engineers reviewing the IPP05N03LB G datasheet, IPP05N03LB G pinout, IPP05N03LB G application, or IPP05N03LB G equivalent, key selection factors include its low gate charge × R_DS(on) figure of merit (FOM), dv/dt ruggedness, JEDEC-qualified reliability, and thermal resistance of 1.6 K/W (junction-to-case).

Technical Context

This MOSFET employs a trench-based silicon process enabling logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V) and low R_DS(on) with high current density. Its dynamic parameters include C_iss = 2412–3209 pF, Q_g = 19–25 nC, and t_d(off) = 27–40 ns, supporting efficient hard-switching up to several hundred kHz.

The device integrates a robust body diode with Q_rr = 10 nC (at V_R = 15 V, di_F/dt = 400 A/µs) and V_SD = 0.98–1.2 V at I_F = 80 A, making it suitable for synchronous rectification and freewheeling in buck converters.

Key Specifications

Pinout & Package

Package: PG-TO220-3-1 - through-hole, isolated tab, standard TO-220 footprint with drain-connected metal tab for thermal and electrical mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRL3803PBF and STL110N3LLH6, IPP05N03LB G delivers superior FOM and verified dv/dt ruggedness - making it optimal for high-frequency, high-reliability DC/DC where both efficiency and noise immunity are critical.

Availability

IPP05N03LB G is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial PLC power stages requiring stable component supply and long-term manufacturability.

Supply support for IPP05N03LB G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS®2 power transistor family - engineered specifically for high-efficiency, high-frequency switching in DC/DC conversion, with emphasis on low R_DS(on), fast switching, and ruggedness.

FAQ

Is IPP05N03LB G suitable for synchronous rectification?

Yes. Its low V_SD (0.98 V typ at 80 A), Q_rr = 10 nC, and logic-level gate threshold enable efficient synchronous rectification in secondary-side buck or flyback converters. The body diode's soft recovery behavior further reduces EMI in high-frequency operation.

What is the maximum recommended gate resistor for 500 kHz switching?

A gate resistor of 2.7 Ω is validated per datasheet (Figure 16) for 500 kHz-class operation with V_DD = 15 V and I_D = 40 A. Lower values (1–2 Ω) may be used with robust gate drivers to reduce t_r/t_f, but require careful layout to avoid oscillation.

Does IPP05N03LB G require a heatsink in 80 A operation?

Yes. At 80 A continuous, P_tot ≈ 34 W (using R_DS(on) = 5.3 mΩ). With R_thJC = 1.6 K/W, even a modest heatsink (R_thCS + R_thSA ≤ 2.5 K/W) is required to maintain T_j ≤ 175 °C at T_C = 100 °C ambient.

Can IPP05N03LB G replace IPP045N03L in existing designs?

Yes, with verification. Both share PG-TO220-3-1 package and logic-level drive, but IPP05N03LB G has 5.3 mΩ R_DS(on) vs. 4.5 mΩ for IPP045N03L - slightly higher conduction loss. Gate charge is comparable (25 nC vs. 24 nC), so driver compatibility is maintained.