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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP060N06NAKSA1

Name: IPP060N06NAKSA1
Brand: Infineon Technologies
SKU: IPP060N06NAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP060N06NAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP060N06NAKSA1.pdf

Description:: MOSFET N-CH 60V 17A/45A TO220-3

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Product details

Overview

IPP060N06NAKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-efficiency synchronous rectification in SMPS. It features 60 V V_DS, 6.0 mΩ R_DS(on) max at V_GS = 10 V and I_D = 45 A, 100% avalanche tested, and qualified per JEDEC standards for industrial power conversion.

For engineers reviewing the IPP060N06NAKSA1 datasheet, IPP060N06NAKSA1 pinout, IPP060N06NAKSA1 application, or IPP060N06NAKSA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g = 27 nC, thermal resistance R_thJC = 1.8 K/W, and integrated body diode performance (V_SD = 1.2 V @ 45 A, t_rr = 51 ns).

Technical Context

This MOSFET employs trench-gate OptiMOS™ technology to minimize conduction and switching losses simultaneously. Its low Q_gd/Q_gs ratio (≈0.56) and 4.8 V gate plateau voltage support fast, controllable turn-on/turn-off transitions in hard-switched and resonant topologies.

The device integrates a robust, low-Q_rr (28 nC) body diode with soft recovery characteristics, enabling reliable synchronous rectification without external Schottky diodes. Thermal design is supported by validated R_thJC = 1.8 K/W and R_thJA = 40 K/W on 6 cm² copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 48 V bus and 12 V output SMPS designs
R_DS(on) max	6.0 mΩ @ V_GS = 10 V, I_D = 45 A - Enables <1.4 W conduction loss at full load in 45 A applications
Q_g	27 nC - Gate charge determines driver strength requirement and switching loss trade-off
t_r/t_f	12 ns / 7 ns - Fast edge rates reduce overlap loss in synchronous buck converters
V_SD	1.2 V @ I_F = 45 A, T_j = 25 °C - Low forward drop minimizes reverse conduction loss during dead-time
E_AS	60 mJ - Single-pulse avalanche energy rating supports ruggedness in overvoltage transients
R_thJC	1.8 K/W - Junction-to-case thermal resistance enables direct heatsink mounting for high-power density

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, pin 1 = Gate, pin 2 = Drain, pin 3 = Source). Tab is electrically connected to Drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives PWM signal; requires ≤27 nC charge to fully enhance; gate threshold 2.1–3.3 V
Pin 2 (Drain)	High-side current path	Connected to heatsink via isolated tab; carries full load current and withstands 60 V transient spikes
Pin 3 (Source)	Reference node	Serves as return path for gate drive and load current; defines local ground for gate driver IC

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness up to 60 mJ, eliminating need for external clamping in flyback or LLC primary switches
Optimized for synchronous rectification	Low Q_gd/Q_gs ratio and soft-recovery body diode enable zero-voltage switching in secondary-side FETs
JEDEC-qualified reliability	Validated per J-STD-20 and JESD22 for temperature cycling, humidity, and solderability-suitable for industrial-grade power supplies
Pb-free & halogen-free	RoHS-compliant lead plating and IEC61249-2-21 compliant materials meet global environmental compliance requirements

Applications

Server VRM

Industrial SMPS

Use Scenario: 48 V input to 1 V/100 A output point-of-load converter in AI accelerator servers.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converter, operating at 500 kHz with adaptive dead-time control.

Use Value: 6.0 mΩ R_DS(on) and 1.2 V V_SD reduce conduction loss by >18% vs. legacy 8 mΩ devices, improving full-load efficiency to >94.5%.

Use Scenario: 24 V/30 A output in DIN-rail mounted programmable logic controller (PLC) power supply.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology, handling 60 V bus transients and 100 µs overload pulses.

Use Value: 60 mJ E_AS and 175 °C T_j(max) ensure reliable operation under sustained short-circuit conditions without derating.

Telecom Rectifier

EV Onboard Charger

Use Scenario: 380 V DC input to 12 V auxiliary supply in 48 V telecom base station rack.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge, driven by transformer-coupled gate signals.

Use Value: 51 ns t_rr and 28 nC Q_rr minimize reverse recovery loss and EMI generation during commutation.

Use Scenario: High-frequency DC-DC stage in 6.6 kW bidirectional OBC, converting 400 V battery to 12 V vehicle network.

IC Role / Device Role / Timing Role: Low-side switch in interleaved buck-boost converter, operating in ZVS mode at 150 kHz.

Use Value: 1.8 K/W R_thJC allows direct mounting to liquid-cooled cold plate, maintaining T_j < 125 °C at 45 A continuous.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06L	R_DS(on) = 7.5 mΩ @ 10 V; Q_g = 35 nC; no avalanche rating specified	Lacks guaranteed avalanche ruggedness; higher gate charge increases driver loss	Acceptable where cost sensitivity outweighs transient robustness and efficiency targets
IRFZ44NPBF	R_DS(on) = 28 mΩ @ 10 V; Q_g = 67 nC; V_DS = 55 V	Lower voltage rating and significantly higher conduction loss limit use to ≤24 V systems	Only suitable for legacy 24 V industrial supplies with relaxed efficiency requirements

Compared with STP60NF06L and IRFZ44NPBF, IPP060N06NAKSA1 delivers superior thermal performance (R_thJC = 1.8 K/W), lower switching loss (Q_g = 27 nC), and guaranteed avalanche capability-making it the preferred choice for high-density, high-reliability 48–60 V SMPS designs.

Availability

IPP060N06NAKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS, telecom rectifiers, and EV onboard chargers requiring stable component supply and long-term lifecycle assurance.

Supply support for IPP060N06NAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 60 V product line, engineered specifically for high-frequency, high-efficiency power conversion in server, telecom, and industrial SMPS where low R_DS(on), fast switching, and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPP060N06NAKSA1 supports 45 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as confirmed in the Absolute Maximum Ratings table. This rating assumes adequate heatsinking to maintain case temperature at or below 100 °C, and reflects the device's thermal design margin for industrial environments.

Is the drain tab electrically isolated in the PG-TO220-3 package?

Yes-the PG-TO220-3 package used for IPP060N06NAKSA1 features an electrically isolated drain tab. The metal tab is internally connected to the Drain terminal but insulated from the mounting surface by a dielectric coating, allowing direct attachment to a common heatsink without shorting the drain node.

Does this MOSFET require a negative gate voltage for safe turn-off in high-dV/dt environments?

No-IPP060N06NAKSA1 has a gate threshold voltage range of 2.1–3.3 V and is rated for ±20 V gate-source voltage. While a negative turn-off bias (e.g., –5 V) improves noise immunity, it is not required; 0 V gate drive fully turns off the device under all specified operating conditions.

Can the integrated body diode replace an external Schottky diode in synchronous rectification?

Yes-the body diode is characterized for soft recovery (t_rr = 32–51 ns, Q_rr = 28 nC) and low forward voltage (V_SD = 1.0–1.2 V @ 45 A), making it suitable for synchronous rectification in 100–500 kHz SMPS without external diodes. However, layout must minimize source inductance to avoid shoot-through during commutation.

IPP060N06NAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta), 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 36µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP060N06NAKSA1 FAQ

1.How can I place an order for IPP060N06NAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP060N06NAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP060N06NAKSA1 reliable?

The price and inventory of IPP060N06NAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP060N06NAKSA1 is usually 5 days.

3.What payment methods are accepted for IPP060N06NAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP060N06NAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP060N06NAKSA1?

IPP060N06NAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP060N06NAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP060N06NAKSA1?

For technical support, including IPP060N06NAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP060N06NAKSA1 requirements.

6.How does Aetrix verify that IPP060N06NAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP060N06NAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP060N06NAKSA1 meets industry standards.

7.What is the process for return or replacement of IPP060N06NAKSA1?

All IPP060N06NAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP060N06NAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP060N06NAKSA1 part is unused and in its original packaging.

Return procedure for IPP060N06NAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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