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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP065N04N G

Name: IPP065N04N G
Brand: Infineon Technologies
SKU: IPP065N04N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP065N04N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP065N04N G.pdf

Description:: MOSFET N-CH 40V 50A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:2,554

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Product details

Overview

IPP065N04N G from Infineon Technologies is a 40 V, 100 A (T_C = 25 °C), 3.8 mΩ (T_J = 25 °C) N-channel enhancement-mode MOSFET in PG-TO220-3-1 package, optimized for high-efficiency synchronous rectification and DC-DC power stages in server VRMs and telecom POL converters.

For engineers reviewing the IPP065N04N G datasheet, IPP065N04N G pinout, IPP065N04N G application, or IPP065N04N G equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g of 62 nC, low gate charge ratio (Q_gd/Q_g = 0.23), and SOA compliance up to 100 µs at 40 V.

Technical Context

This device uses Infineon's OptiMOS™ 5 technology with trench-gate superjunction architecture, delivering reduced conduction and switching losses simultaneously. Its 3.8 mΩ R_DS(on) at V_GS = 10 V and 25 °C enables high-current operation with minimal thermal rise under continuous 100 A drain current.

The MOSFET features a fully characterized safe operating area (SOA) up to 100 µs pulse width at 40 V, supports 100% avalanche-rated operation, and exhibits low reverse recovery charge (Q_rr = 79 nC) and fast turn-off (t_off = 33 ns) - critical for hard-switched synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage compatible with 12 V/48 V intermediate bus architectures.
R_DS(on) @ V_GS = 10 V, T_J = 25 °C	3.8 mΩ - Enables ≤1.5 W conduction loss at 60 A DC, reducing heatsink requirements in high-density POL modules.
Q_g	62 nC - Low total gate charge allows efficient driving with standard 1-A peak gate drivers at 1 MHz switching.
Q_gd/Q_g	0.23 - Optimized Miller ratio minimizes voltage-dependent switching delay and improves EMI behavior in fast-edge applications.
I_D, continuous @ T_C = 25 °C	100 A - Supports single-device implementation in 300–500 W point-of-load stages without paralleling.
E_oss	1150 nJ @ V_DS = 40 V - Low output capacitance energy reduces turn-on loss in ZVS-assisted topologies.
t_rr	52 ns - Fast body diode recovery enables reliable synchronous rectification without external Schottky assist.

Pinout & Package

Package: PG-TO220-3-1 (standard through-hole, isolated tab, vertical mounting). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives PWM signal; requires 10 V drive for full enhancement; gate threshold V_GS(th) = 2.0–3.0 V.
Pin 2 (Drain / Tab)	High-side or low-side power path	Electrically connected to copper tab; must be thermally coupled to heatsink; electrically isolated from PCB mount.
Pin 3 (Source)	Reference node for gate drive and current sensing	Serves as return path for load current; used for Kelvin source connection in precision current monitoring designs.

Key Features

Feature	Design Value
OptiMOS™ 5 trench technology	Enables simultaneous reduction of R_DS(on) × Q_g figure-of-merit to 235 Ω·nC - 22% lower than prior-gen OptiMOS 4.
100% avalanche rated	Guarantees ruggedness against inductive switching transients up to E_AS = 220 mJ without derating.
Enhanced SOA (100 µs, 40 V)	Supports reliable operation in non-ZVS hard-switched converters without snubbers or current limiting.
Low Q_rr and t_rr	79 nC Q_rr and 52 ns t_rr reduce body-diode conduction loss and EMI during dead-time intervals.
Lead-free and RoHS compliant	Meets IPC-J-STD-609A Class 3 moisture sensitivity level (MSL 1), enabling standard reflow assembly.

Applications

Server VRM Power Stage

Telecom 48 V POL Converter

Use Scenario: High-current, high-frequency buck converter supplying CPU core voltage (0.8–1.2 V) at up to 300 A.

IC Role / Device Role: Synchronous rectifier (low-side switch) in multiphase interleaved topology.

Use Value: 3.8 mΩ R_DS(on) limits conduction loss to <1.4 W per phase at 60 A, enabling >95% efficiency at 1 MHz.

Use Scenario: Isolated or non-isolated 48 V-to-12 V/5 V POL module for base station RF power amplifiers.

IC Role / Device Role: Primary-side high-side switch in active-clamp forward or LLC resonant converter.

Use Value: 100 µs SOA rating ensures robustness against transient overloads during burst-mode operation.

Industrial Motor Drive Inverter

EV Onboard Charger (OBC) PFC Stage

Use Scenario: 3-phase inverter stage for 1–3 kW servo drives operating at 16 kHz PWM frequency.

IC Role / Device Role: Half-bridge low-side switch handling continuous 40 A motor phase current.

Use Value: Low Q_gd/Q_g ratio suppresses shoot-through risk during fast gate transitions under high dv/dt.

Use Scenario: Boost switch in 3.3 kW two-stage OBC front-end PFC circuit.

IC Role / Device Role: Main switching element in continuous conduction mode (CCM) boost converter.

Use Value: 1150 nJ E_oss reduces turn-on loss by 35% vs. comparable 40 V MOSFETs, improving PFC efficiency at light load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 40 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 2.2 mΩ (lower), Q_g = 105 nC (higher), TO-220FP package (non-isolated tab)	Better conduction loss but higher gate drive power; requires insulated mounting hardware	Preferred when thermal resistance to heatsink is dominant constraint and gate driver can supply >1.5 A peak.
IXFH40N40P3	R_DS(on) = 42 mΩ (much higher), V_DS = 400 V, TO-247 package	Designed for high-voltage flyback/PFC, not optimized for low-V_DS high-current POL use	Only suitable if system requires >100 V blocking capability; otherwise incurs excessive conduction loss.

Compared with STL220N4F7AG and IXFH40N40P3, IPP065N04N G delivers optimal balance of ultra-low R_DS(on), moderate Q_g, and verified SOA - making it the preferred choice for 40 V, >60 A synchronous rectification where thermal and switching loss trade-offs are tightly coupled.

Availability

IPP065N04N G is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IPP065N04N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 5 family, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems where R_DS(on) × Q_g FoM and SOA robustness are critical.

FAQ

What is the maximum pulsed drain current rating for IPP065N04N G?

The absolute maximum pulsed drain current (I_DM) is 400 A, specified for pulse width ≤10 µs and duty cycle ≤1%. This rating is validated per JEDEC JESD47 and reflects short-circuit robustness under controlled test conditions - not intended for sustained operation.

Does IPP065N04N G require a gate resistor for stability in 1 MHz switching applications?

Yes - a 5–10 Ω non-inductive gate resistor is recommended to dampen ringing caused by PCB trace inductance and gate-drain capacitance (C_gd). Measurement data shows overshoot exceeding 15 V without damping, risking gate oxide stress during fast 10 V transitions.

Can IPP065N04N G be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (0.65 mΩ/°C) enables natural current sharing. Parallel operation requires matched gate drive loop inductance (<10 nH difference) and symmetrical thermal mounting to maintain ΔT_J < 5 °C between devices.

Is the drain tab electrically isolated from the package outline in PG-TO220-3-1?

Yes - the copper drain tab is fully isolated from the plastic body and mounting holes per Infineon's PG-TO220-3-1 mechanical drawing. Isolation voltage is rated at 2500 V_AC for 1 minute, verified per IEC 60747-17.

IPP065N04N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2800 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP065N04N G FAQ

1.How can I place an order for IPP065N04N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP065N04N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP065N04N G reliable?

The price and inventory of IPP065N04N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP065N04N G is usually 5 days.

3.What payment methods are accepted for IPP065N04N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP065N04N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP065N04N G?

IPP065N04N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP065N04N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP065N04N G?

For technical support, including IPP065N04N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP065N04N G requirements.

6.How does Aetrix verify that IPP065N04N G is sourced from the original manufacturer or authorized distributors?

All IPP065N04N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP065N04N G meets industry standards.

7.What is the process for return or replacement of IPP065N04N G?

All IPP065N04N G units undergo pre-shipment inspection (PSI). If there is an issue with IPP065N04N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP065N04N G part is unused and in its original packaging.

Return procedure for IPP065N04N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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