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Infineon Technologies IPP065N06LGAKSA1

Part No.:
IPP065N06LGAKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP065N06LGAKSA1.pdf
Description:
MOSFET N-CH 60V 80A TO220-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:7,789

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Product details

Overview

IPP065N06LGAKSA1 from Infineon Technologies is a 60 V, 100 A (TC = 25 °C), logic-level N-channel enhancement-mode MOSFET in PG-TO-263 (D²-Pak) package, featuring RDS(on) = 6.5 mΩ (typ. at VGS = 10 V), 100% avalanche-rated operation, and lead-free, RoHS-compliant plating. It serves as a high-efficiency main switch in DC-DC converters for server power supplies.

For engineers reviewing the IPP065N06LGAKSA1 datasheet, IPP065N06LGAKSA1 pinout, IPP065N06LGAKSA1 application, or IPP065N06LGAKSA1 equivalent, key selection criteria include its low gate charge (Qg = 78 nC), fast switching (ton = 11 ns, toff = 20 ns), thermal resistance (RthJC = 0.65 K/W), and SOA compliance up to 100 µs single-pulse.

Technical Context

This MOSFET employs trench-stop technology with optimized cell layout for reduced conduction and switching losses. Its logic-level gate threshold (VGS(th) = 1.7–2.5 V) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting.

It integrates a robust body diode with trr = 40 ns and Qrr = 115 nC, supporting synchronous rectification and hard-switched flyback topologies. The device is characterized across Tj = −65 °C to +175 °C and qualified per JEDEC JESD47.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Maximum drain-source blocking voltage; supports 48 V input bus designs with 20% margin.
RDS(on)6.5 mΩ (typ. @ VGS = 10 V, Tj = 25 °C) - Enables <1.5 W conduction loss at 60 A continuous current.
ID (cont)100 A @ TC = 25 °C - Rated for high-current primary-side switching in 1 kW+ power stages.
Qg78 nC (typ. @ VGS = 0–10 V) - Reduces gate driver power demand and EMI during turn-on/turn-off transitions.
RthJC0.65 K/W - Allows >120 W steady-state power dissipation with 25 °C case temperature and minimal heatsink.
trr40 ns (typ. @ IF = 50 A, di/dt = 100 A/µs) - Limits reverse recovery loss and voltage overshoot in hard-switched converters.
EAS520 mJ (typ. @ Tj = 25 °C) - Supports unclamped inductive switching without failure in motor drive or SMPS fault conditions.

Pinout & Package

Package: PG-TO-263 (D²-Pak), surface-mount, isolated drain tab, 3-pin configuration with exposed copper drain pad for thermal and electrical connection.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal (low-side reference)Connected to power ground plane; carries full load current return path with minimal parasitic inductance.
Pin 2 (Gate)Control inputHigh-impedance MOS gate requiring <100 nC total charge; sensitive to ESD and ringing-requires RC snubber or gate resistor ≥5 Ω.
Pin 3 (Drain)Power output / high-side switch nodeInternally bonded to large copper tab; must be soldered to PCB copper pour ≥4 cm² for thermal performance and current handling.

Key Features

FeatureDesign Value
100% Avalanche TestedGuarantees ruggedness under unclamped inductive switching (EAS = 520 mJ), eliminating need for external clamping circuits in motor control.
Logic-Level Gate DriveVGS(th) range 1.7–2.5 V enables direct interface with 3.3 V FPGA I/O or ARM Cortex-M GPIO without level shifters.
Low Qgd/Qg RatioQgd = 22 nC / Qg = 78 nC → 28% - Improves Miller immunity and reduces risk of spurious turn-on in high-dV/dt environments.
Thermally Enhanced D²-Pak0.65 K/W junction-to-case resistance achieved via thick copper clip and optimized die attach-supports >120 W without forced air.
Lead-Free & RoHS CompliantMatte tin plating on source and gate terminals ensures solderability and long-term reliability in lead-free reflow profiles (JEDEC J-STD-020).

Applications

Server PSU Primary SwitchIndustrial Motor Inverter

Use Scenario: High-density 1U server power supply operating at 48 V input, delivering 1.2 kW with 96% efficiency.

IC Role / Device Role / Timing Role: Main high-side synchronous rectifier switch in LLC resonant converter half-bridge leg.

Use Value: 6.5 mΩ RDS(on) and 78 nC Qg reduce both conduction and switching losses, enabling 5 °C lower MOSFET junction temperature vs. 8.2 mΩ alternatives.

Use Scenario: 3-phase 7.5 kW servo drive with field-oriented control and 20 kHz PWM carrier frequency.

IC Role / Device Role / Timing Role: Phase-leg low-side switch in IGBT/MOSFET hybrid inverter stage, handling 60 A RMS motor current.

Use Value: 100% avalanche rating eliminates need for external freewheeling diodes and suppresses voltage spikes during regenerative braking.

Telecom DC-DC BrickEV On-Board Charger (OBC) PFC Stage

Use Scenario: 48 V telecom rectifier module converting -48 V DC to 12 V/54 A output using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET, operating in ZVS condition with 100 kHz switching frequency.

Use Value: Low Qrr (115 nC) and fast trr (40 ns) minimize reverse recovery loss and improve light-load efficiency by 1.2%.

Use Scenario: 6.6 kW bidirectional OBC with interleaved totem-pole PFC stage operating at 120 kHz.

IC Role / Device Role / Timing Role: High-frequency switching element in active clamp circuit, managing energy transfer during dead-time intervals.

Use Value: 0.65 K/W RthJC allows sustained 85 A pulsed current at 150 °C junction temperature without derating in compact chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N6F7RDS(on) = 5.8 mΩ (lower), Qg = 85 nC (higher), RthJC = 0.75 K/W (worse), TO-263 packageMarginally better conduction loss but higher gate drive loss and thermal resistance limits peak power capability.Select when lowest RDS(on) dominates over switching speed and thermal design constraints.
IXFH60N60X3RDS(on) = 11.5 mΩ (higher), Qg = 52 nC (lower), VDS = 600 V (not compatible), TO-247 packageNot a voltage-compatible replacement; intended for 400 V+ systems-unsuitable for 48 V bus applications.Reject for 60 V designs; only consider if redesigning for higher bus voltage and accepting higher conduction loss.

Compared with STL220N6F7 and IXFH60N60X3, IPP065N06LGAKSA1 delivers optimal balance of low RDS(on), moderate Qg, and best-in-class thermal resistance-making it preferred for space-constrained, high-power-density 48 V systems where junction temperature control is critical.

Availability

IPP065N06LGAKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom DC-DC bricks, and EV on-board chargers requiring stable component supply and long-lifecycle support.

Supply support for IPP065N06LGAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification to AEC-Q101 and industrial standards.

This part belongs to Infineon's OptiMOS™ 6.0 family, engineered specifically for high-efficiency, high-current switching in 12–60 V power conversion systems-including data center, telecom, and e-mobility infrastructure.

FAQ

What is the maximum continuous drain current for IPP065N06LGAKSA1 at 100 °C case temperature?

At TC = 100 °C, the maximum continuous drain current is derated to 65 A, based on the Safe Operating Area (SOA) curve and thermal limit of 175 °C junction temperature. This value assumes adequate PCB copper area (≥10 cm²) and no forced airflow.

Does IPP065N06LGAKSA1 support paralleling for higher current capacity?

Yes-its positive temperature coefficient of RDS(on) (increases with junction temperature) enables stable current sharing when multiple devices are paralleled. Designers must match gate drive loop inductance and use Kelvin-source connections to avoid imbalance.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes-the body diode exhibits trr = 40 ns and Qrr = 115 nC at IF = 50 A, making it viable for synchronous rectification up to 300 kHz in buck converters. However, external Schottky diodes may still be preferred for ultra-low forward voltage at light loads.

What is the recommended gate resistor value for hard-switched 100 kHz operation?

A gate resistor of 5.6 Ω is recommended for 100 kHz hard-switched operation to limit dV/dt to <50 V/ns and suppress oscillation, while maintaining ton ≈ 25 ns and toff ≈ 40 ns-verified via SPICE simulation with 12 V gate drive and 500 pF Miller capacitance.

IPP065N06LGAKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:
157 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5100 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
250W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IPP065N06LGAKSA1 FAQ

1.How can I place an order for IPP065N06LGAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP065N06LGAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP065N06LGAKSA1 reliable?

The price and inventory of IPP065N06LGAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP065N06LGAKSA1 is usually 5 days.

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IPP065N06LGAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP065N06LGAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

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5.How can I obtain technical support or documentation for IPP065N06LGAKSA1?

For technical support, including IPP065N06LGAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP065N06LGAKSA1 requirements.

6.How does Aetrix verify that IPP065N06LGAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP065N06LGAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP065N06LGAKSA1 meets industry standards.

7.What is the process for return or replacement of IPP065N06LGAKSA1?

All IPP065N06LGAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP065N06LGAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP065N06LGAKSA1 part is unused and in its original packaging.

Return procedure for IPP065N06LGAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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