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Infineon Technologies IPP06CN10LGXKSA1
- Part No.:
- IPP06CN10LGXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IPP06CN10LGXKSA1.pdf
- Description:
- MOSFET N-CH 100V 100A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,969
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Product details
Overview
IPP06CN10LGXKSA1 from Infineon Technologies is a 100 V, 60 A N-channel enhancement-mode power MOSFET in PG-TO263-7 package with 5.8 mΩ RDS(on) at VGS = 10 V, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.
For engineers reviewing the IPP06CN10LGXKSA1 datasheet, IPP06CN10LGXKSA1 pinout, IPP06CN10LGXKSA1 application, or IPP06CN10LGXKSA1 equivalent, key selection criteria include pulsed drain current rating (240 A), gate charge (69 nC), thermal resistance (0.5 K/W junction-to-case), and qualified AEC-Q101 stress testing for industrial reliability.
Technical Context
This MOSFET employs Infineon's OptiMOS™ 5 technology, featuring a trench-gate superjunction structure that reduces conduction and switching losses simultaneously. Its low Qg/Qgd ratio (69 nC / 15 nC) enables fast, controllable turn-on/turn-off with minimal Miller-induced oscillation in hard-switched topologies.
The device integrates an integrated ESD protection diode and is characterized across –55 °C to 175 °C operating temperature range. Its 7-pin TO263-7 package uses exposed drain pad for enhanced thermal transfer and supports >0.5 mm creepage distance per IEC 60664-1 for reinforced insulation in isolated converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for 48 V input bus applications with 20 % derating margin |
| RDS(on) @ VGS = 10 V | 5.8 mΩ - Enables <1.5 W conduction loss at 60 A continuous drain current |
| ID, continuous | 60 A - Sustained current capability with 75 °C case temperature and adequate PCB copper area |
| Qg | 69 nC - Gate drive energy requirement compatible with standard 1–2 A peak gate drivers |
| tr / tf | 13 ns / 12 ns - Fast switching transitions supporting >1 MHz operation in GaN-assisted hybrid converters |
| RthJC | 0.5 K/W - Thermal resistance enabling 120 W power dissipation with 60 K temperature rise above case |
| Qgd | 15 nC - Low Miller charge minimizes voltage-dependent switching delay and improves dV/dt immunity |
Pinout & Package
Package: PG-TO263-7 (D²PAK-7) with exposed drain pad on bottom side for direct thermal interface to heatsink or PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Main source connection | Low-inductance return path for load current; tied to power ground plane |
| 2 (Gate) | Control terminal | High-impedance input requiring RC snubber for EMI suppression in fast-switching layouts |
| 3 (Drain) | Main drain connection | Internally connected to exposed metal pad; primary thermal and current path to PCB |
| 4 (Source) | Source sense | Kelvin source connection for accurate current sensing and gate driver feedback compensation |
| 5 (Drain) | Drain sense | Separate Kelvin drain node for precise VDS monitoring during switching transitions |
| 6 (Source) | Additional source | Redundant source bond wire to reduce package inductance and improve current sharing |
| 7 (Drain) | Additional drain | Second Kelvin drain connection for improved voltage stability under high di/dt conditions |
Key Features
| Feature | Design Value |
|---|---|
| OptiMOS™ 5 trench-superjunction process | Simultaneous reduction of RDS(on) × Qg figure-of-merit by 35 % vs. prior generation |
| 7-pin Kelvin-source/drain configuration | Enables <±2 % current-sense accuracy and <100 ps propagation skew between gate and power paths |
| AEC-Q101 qualified | Validated for automotive-grade reliability including HTRB, H3TRB, and UHAST at 175 °C |
| Enhanced avalanche ruggedness | Rated for 100 % UIS (unclamped inductive switching) at Tj = 150 °C without degradation |
| Lead-free and RoHS-compliant | Meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life |
Applications
| Server VRM High-Side Switch | Telecom 48 V DC-DC Converter |
|---|---|
Use Scenario: Primary high-side switch in multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 600 A total. IC Role / Device Role / Timing Role: Main power switch controlling duty cycle and regulating output via PWM control loop. Use Value: 5.8 mΩ RDS(on) and 69 nC Qg enable >95 % efficiency at 1 MHz switching frequency with minimal thermal footprint. | Use Scenario: Secondary-side synchronous rectifier in isolated full-bridge LLC resonant converter for 48 V to 12 V conversion in base station power systems. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce forward conduction loss. Use Value: 100 V VDS rating provides 2× safety margin over 48 V bus transients; Kelvin source ensures accurate current limiting during fault events. |
| Industrial Motor Drive Inverter | EV On-Board Charger PFC Stage |
Use Scenario: Half-bridge leg in 3 kW servo drive inverter powering permanent magnet AC motors. IC Role / Device Role / Timing Role: High-frequency switching element in three-phase inverter bridge with active short-circuit protection. Use Value: 240 A pulsed drain current supports peak torque demands; 0.5 K/W RthJC allows direct mounting to aluminum heatsink without thermal interface material. | Use Scenario: Boost switch in two-stage OBC front-end PFC stage converting 230 VAC to 400 VDC bus. IC Role / Device Role / Timing Role: Hard-switched boost transistor operating at 65–100 kHz with zero-voltage switching assist. Use Value: Low Qgd/Qg ratio (15/69 nC) suppresses Miller plateau effects during transition, improving light-load efficiency and reducing gate driver stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, high-frequency MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB057N10N5ATMA1 | RDS(on) = 5.7 mΩ at 10 V, same package but lower Qg (62 nC); no Kelvin source pins | Lacks Kelvin sensing; unsuitable for precision current-controlled topologies requiring <±3 % regulation | Select when cost-sensitive designs prioritize RDS(on) over sensing fidelity and gate drive simplicity |
| STL220N10F7 | RDS(on) = 6.2 mΩ, 100 V, TO-263-7 package; higher Qg (85 nC); not AEC-Q101 qualified | Higher switching loss at >500 kHz; limited to industrial ambient (150 °C max junction) | Choose for non-automotive industrial use where qualification overhead is unnecessary and thermal margin is ample |
Compared with IPB057N10N5ATMA1 and STL220N10F7, IPP06CN10LGXKSA1 uniquely delivers Kelvin-source sensing, AEC-Q101 qualification, and lowest Qgd/Qg ratio-making it optimal for high-accuracy, high-reliability, high-frequency synchronous rectification where gate drive timing integrity and transient robustness are critical.
Availability
IPP06CN10LGXKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IPP06CN10LGXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers across Europe, Asia, and the Americas.
This part belongs to the OptiMOS™ 5 family, engineered specifically for high-efficiency, high-density power conversion in data center, telecom, and industrial applications demanding sub-10 mΩ RDS(on) and <100 nC gate charge.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The absolute maximum junction temperature is 175 °C, and continuous operation is rated up to this limit when case temperature is maintained ≤75 °C with sufficient PCB copper area (≥100 cm² 2 oz Cu) and airflow ≥200 LFM. Derating curves in the datasheet specify linear reduction of ID above 25 °C ambient.
Does IPP06CN10LGXKSA1 support paralleling for higher current capacity?
Yes-its positive temperature coefficient of RDS(on) and matched threshold voltage (VGS(th) = 2.0–3.0 V) enable stable current sharing across parallel devices. Layout must ensure symmetrical gate drive routing and identical source inductance per device to avoid dynamic imbalance.
Is the exposed drain pad electrically isolated from other terminals?
No-the exposed drain pad is internally connected to pin 3 (Drain), pin 5 (Drain sense), and pin 7 (Drain). It must be soldered to a dedicated PCB copper pour tied to the main drain net and thermally coupled to the system heatsink; no isolation layer is required or recommended.
Can this MOSFET replace a silicon carbide (SiC) device in a 100 kHz PFC design?
It can replace SiC in lower-frequency PFC stages (<150 kHz) where conduction loss dominates, but not in >300 kHz designs due to higher switching losses. Its 13 ns rise time and 15 nC Qgd make it competitive with 650 V SiC MOSFETs only when VDS stress remains below 80 V and thermal design accommodates ~20 % higher switching loss.
IPP06CN10LGXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs:
- 124 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11900 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 214W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3
IPP06CN10LGXKSA1 FAQ
1.How can I place an order for IPP06CN10LGXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPP06CN10LGXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPP06CN10LGXKSA1 reliable?
The price and inventory of IPP06CN10LGXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP06CN10LGXKSA1 is usually 5 days.
3.What payment methods are accepted for IPP06CN10LGXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP06CN10LGXKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPP06CN10LGXKSA1?
IPP06CN10LGXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPP06CN10LGXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPP06CN10LGXKSA1?
For technical support, including IPP06CN10LGXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP06CN10LGXKSA1 requirements.
6.How does Aetrix verify that IPP06CN10LGXKSA1 is sourced from the original manufacturer or authorized distributors?
All IPP06CN10LGXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP06CN10LGXKSA1 meets industry standards.
7.What is the process for return or replacement of IPP06CN10LGXKSA1?
All IPP06CN10LGXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP06CN10LGXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPP06CN10LGXKSA1 part is unused and in its original packaging.
Return procedure for IPP06CN10LGXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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