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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP06N03LA

Name: IPP06N03LA
Brand: Infineon Technologies
SKU: IPP06N03LA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP06N03LA

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP06N03LA.pdf

Description:: MOSFET N-CH 25V 50A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:3,066

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Product details

Overview

IPP06N03LA from Infineon Technologies is a logic-level N-channel enhancement-mode MOSFET optimized for high-frequency DC/DC converters, featuring 25 V V_DS, 5.9 mΩ R_DS(on) (max, SMD version), 50 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature. It delivers low gate charge × R_DS(on) figure-of-merit and dv/dt ruggedness for reliable synchronous rectification in compact power supplies.

For engineers reviewing the IPP06N03LA datasheet, IPP06N03LA pinout, IPP06N03LA application, or IPP06N03LA equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, thermal resistance of 1.8 K/W (junction-to-case), reverse diode forward voltage of 0.94–1.2 V at 50 A, and avalanche energy rating of 225 mJ.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve low R_DS(on) and fast switching dynamics. Its gate threshold voltage (1.2–2.0 V typ.) enables robust turn-on with standard logic-level drivers, while the 124–186 pF Crss supports controlled dv/dt behavior under hard-switching conditions.

The device integrates a monolithic body diode rated for 50 A continuous forward current and 10 nC reverse recovery charge (Q_rr) at 400 A/µs di/dt - critical for minimizing commutation losses in synchronous buck topologies operating above 300 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 3.3 V/5 V input rail applications
R_DS(on) max (V_GS = 4.5 V)	9.9 mΩ - Enables <1 W conduction loss at 30 A in TO-220 package
I_D cont. (T_C = 25 °C)	50 A - Supported by bondwire-limited current rating, not thermal limit
Q_g total	16–22 nC - Low gate charge enables efficient 1–2 MHz switching with <2.7 Ω driver
E_AS	225 mJ - Single-pulse avalanche energy ensures robustness during inductive load transients
dv/dt rating	6 kV/µs - Confirmed immunity to parasitic turn-on in high-dV/dt environments
T_j max	175 °C - Extended temperature operation for sealed or high-ambient industrial power modules

Pinout & Package

IPP06N03LA uses the P-TO220-3-1 package: through-hole, single-ended heat sink mounting, 3-pin configuration with isolated tab (drain-connected). Thermal resistance R_thJC = 1.8 K/W enables direct heatsink coupling without insulating pads.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Low-inductance source connection critical for gate drive loop stability
Pin 2 (Gate)	Control terminal for channel modulation	Logic-level compatible; requires <2.7 Ω series resistor to damp ringing
Pin 3 (Drain)	Main power output node / heatsink interface	Electrically connected to metal tab; must be isolated from PCB ground if floating topology used

Key Features

Feature	Design Value
Logic-level gate drive	Turns fully on at V_GS = 4.5 V - eliminates need for gate driver IC in 3.3 V microcontroller systems
Low Q_g × R_DS(on)	~110–130 mΩ·nC - benchmark FoM for high-efficiency 500 kHz–1 MHz DC/DC stages
dv/dt ruggedness	6 kV/µs - prevents false triggering during fast voltage transitions in half-bridge configurations
Monolithic body diode	Q_rr = 10 nC, V_SD = 0.94 V @ 50 A - reduces dead-time losses and EMI in synchronous rectifiers

Applications

Server VRM

Industrial SMPS

Use Scenario: Point-of-load (POL) converter supplying core voltage to Xeon or EPYC CPUs.

IC Role / Device Role / Timing Role: High-side synchronous FET in 300–600 kHz multiphase buck stage.

Use Value: 5.9 mΩ R_DS(on) limits conduction loss to <0.9 W at 45 A, enabling >94% efficiency at 12 V input.

Use Scenario: 24 V input to 5 V/12 V isolated auxiliary supply in PLC backplane.

IC Role / Device Role / Timing Role: Primary-side switch in flyback or active-clamp forward converter.

Use Value: 175 °C T_j max and 225 mJ E_AS ensure reliability under sustained overload and line surge events.

USB-C PD Adapter

Automotive DC/DC Module

Use Scenario: Compact 65 W GaN-assisted adapter with dual-phase interleaved buck-boost.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant output stage.

Use Value: 0.94 V V_SD and 10 nC Q_rr reduce reverse recovery loss by 35% vs. standard Schottky alternatives.

Use Scenario: 12 V to 5 V/3.3 V power module for ADAS camera ECU in engine bay.

IC Role / Device Role / Timing Role: Input switch in pre-regulator stage handling cold-crank (4.5 V) to load dump (40 V) transients.

Use Value: 25 V V_DS rating with 6 kV/µs dv/dt immunity prevents spurious turn-on during alternator ripple noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLZ44N	R_DS(on) = 25 mΩ @ 4.5 V; Q_g = 44 nC; V_DS = 55 V	Higher conduction loss and slower switching - suitable only for ≤200 kHz designs	Select when higher V_DS margin is required and efficiency is secondary to cost
STP60NF06L	R_DS(on) = 10 mΩ @ 4.5 V; Q_g = 65 nC; T_j max = 175 °C	Higher gate charge increases driver loss and limits max frequency to ~400 kHz	Prefer for legacy TO-220 footprint compatibility where lower FoM is acceptable

Compared with IRLZ44N and STP60NF06L, IPP06N03LA provides superior high-frequency efficiency due to its 5.9 mΩ R_DS(on) and 16–22 nC Q_g, making it optimal for modern compact DC/DC converters demanding >93% efficiency at ≥500 kHz.

Availability

IPP06N03LA is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS, USB-C PD adapters, and automotive DC/DC modules requiring stable component supply across extended temperature and high-reliability production cycles.

Supply support for IPP06N03LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

This part belongs to the OptiMOS®2 family - designed specifically for high-efficiency, high-frequency power conversion in space-constrained applications such as telecom rectifiers and CPU voltage regulators.

FAQ

Is IPP06N03LA pin-compatible with IPP05N03LG?

No. IPP05N03LG uses P-TO220-3-2 package with drain-isolated tab, whereas IPP06N03LA uses P-TO220-3-1 with drain-connected tab. Mechanical mounting and thermal interface differ - direct replacement requires PCB layout revision and isolation reassessment.

What is the maximum recommended gate resistor for 1 MHz operation?

A 2.7 Ω series gate resistor is validated per datasheet Figure 16 for 1 MHz switching with R_G = 2.7 Ω, V_DD = 15 V, and I_D = 25 A. Lower values risk ringing; higher values increase switching losses beyond 500 ns transition times.

Does IPP06N03LA support paralleling for higher current?

Yes - its positive temperature coefficient of R_DS(on) (see Fig. 9) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and shared heatsinking to maintain ΔT_j < 5 °C between devices.

Can IPP06N03LA replace IPP03CN03L in a 3.3 V gate-driven circuit?

Yes - both are logic-level N-channel MOSFETs with V_GS(th) ≤ 2.0 V and R_DS(on) < 10 mΩ @ 4.5 V. However, IPP06N03LA offers 30% lower R_DS(on) and 40% lower Q_g, improving efficiency and thermal margin in identical layouts.

IPP06N03LA Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2653 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP06N03LA FAQ

1.How can I place an order for IPP06N03LA through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP06N03LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP06N03LA reliable?

The price and inventory of IPP06N03LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP06N03LA is usually 5 days.

3.What payment methods are accepted for IPP06N03LA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP06N03LA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP06N03LA?

IPP06N03LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP06N03LA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP06N03LA?

For technical support, including IPP06N03LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP06N03LA requirements.

6.How does Aetrix verify that IPP06N03LA is sourced from the original manufacturer or authorized distributors?

All IPP06N03LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP06N03LA meets industry standards.

7.What is the process for return or replacement of IPP06N03LA?

All IPP06N03LA units undergo pre-shipment inspection (PSI). If there is an issue with IPP06N03LA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP06N03LA part is unused and in its original packaging.

Return procedure for IPP06N03LA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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