Infineon Technologies IPP070N06L G
- Part No.:
- IPP070N06L G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IPP070N06L G.pdf
- Description:
- MOSFET N-CH 60V 80A TO220-3
- Quantity:
- Payment:

- Shipping:

Inventory:7,007
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Product details
Overview
IPP070N06L G from Infineon Technologies is a 60 V, 80 A, logic-level N-channel enhancement-mode MOSFET in PG-TO-263 (D²-Pak) package, featuring RDS(on) = 7.0 mΩ at VGS = 10 V and Tj = 25 °C, rated for continuous drain current up to 80 A at Tc = 25 °C, and optimized for high-efficiency DC-DC converters and motor control in industrial power supplies.
For engineers reviewing the IPP070N06L G datasheet, IPP070N06L G pinout, IPP070N06L G application, or IPP070N06L G equivalent, key selection criteria include its low gate threshold voltage (VGS(th) = 2.0–3.0 V), fast switching performance (ton = 10–20 ns, Qg = 42 nC), avalanche-rated ruggedness, and lead-free, RoHS-compliant packaging.
Technical Context
This MOSFET employs trench-stop technology with optimized charge balance for reduced conduction and switching losses. Its logic-level gate drive enables direct interface with 3.3 V/5 V microcontrollers without level-shifting circuitry.
The device integrates a robust body diode with trr = 71–90 ns and Qrr = 80–100 nC, supporting synchronous rectification and hard-switched flyback topologies. Thermal resistance RthJC = 0.9 K/W ensures efficient heat transfer from junction to case under forced-air cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage for 24 V/48 V bus applications |
| ID (continuous) | 80 A at Tc = 25 °C - Supports high-current motor drives and server VRMs |
| RDS(on) | 7.0 mΩ max at VGS = 10 V, Tj = 25 °C - Minimizes conduction loss in 12–48 V systems |
| VGS(th) | 2.0–3.0 V - Enables full enhancement with 3.3 V logic-level MCU outputs |
| Qg | 42 nC typ at VGS = 10 V - Enables efficient 100–500 kHz switching in SMPS |
| EAS | 420 mJ - Rated single-pulse avalanche energy supports unclamped inductive switching |
| RthJC | 0.9 K/W - Allows >60 W dissipation with moderate heatsinking at Tc = 100 °C |
Pinout & Package
Package: PG-TO-263 (D²-Pak), surface-mount, isolated tab (drain-connected), 3-pin configuration with standard thermal pad footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side return path; electrically tied to PCB ground plane for EMI control |
| Pin 2 (Gate) | Control input | High-impedance MOS gate requiring <100 nF gate driver output capacitance |
| Pin 3 (Drain) | Power output / high-side switch node | Internally connected to exposed metal tab; must be thermally and electrically coupled to heatsink |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V - eliminates need for gate driver ICs in 5 V systems |
| Avalanche-rated | Guaranteed EAS = 420 mJ - enables reliable operation in inductive load switching without external snubbers |
| Low Qg/Qgd ratio | Qgd/Qg = 12 nC / 42 nC ≈ 0.29 - improves Miller immunity and reduces switching overshoot |
| Enhanced body diode | trr = 71–90 ns, Qrr = 80–100 nC - supports ZVS/ZCS soft-switching in resonant converters |
| RoHS-compliant & halogen-free | Meets IPC-J-STD-020 moisture sensitivity level MSL 1 - suitable for lead-free reflow assembly |
Applications
| Industrial Motor Drives | Server & Telecom VRMs |
|---|---|
Use Scenario: 48 V BLDC motor control in automated guided vehicles (AGVs) with PWM frequency ≥ 20 kHz. IC Role / Device Role / Timing Role: Low-side switching element in 3-phase inverter bridge; handles peak currents up to 120 A pulsed. Use Value: 7.0 mΩ RDS(on) reduces I²R losses by >35% vs. comparable 10 mΩ devices, extending battery runtime. | Use Scenario: High-density 12 V → 0.8 V point-of-load converter in AI accelerator servers. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter operating at 500 kHz with 30 A per phase. Use Value: Fast ton/toff (10–20 ns) and low Qg enable stable operation at high frequency while minimizing gate drive loss. |
| Uninterruptible Power Supplies | Automotive DC-DC Converters |
Use Scenario: Bidirectional 400 V/48 V DC-DC stage in UPS with active clamp forward topology. IC Role / Device Role / Timing Role: Primary-side switch handling 60 V blocking and 65 A continuous conduction mode. Use Value: Avalanche rating (EAS = 420 mJ) absorbs leakage inductance spikes during turn-off, eliminating need for TVS clamping. | Use Scenario: 12 V → 48 V boost converter in 48 V mild-hybrid vehicle architectures. IC Role / Device Role / Timing Role: Main power switch in interleaved boost stage operating at 150 kHz with 100 °C ambient. Use Value: RthJC = 0.9 K/W allows 60 W dissipation with minimal heatsink, meeting ASIL-B thermal safety margins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | RDS(on) = 6.2 mΩ @ 10 V, but VGS(th) = 2.5–3.5 V; higher Qg = 58 nC | Better conduction loss, but slower switching and higher gate drive power | Prefer for low-frequency, high-current applications where thermal margin exceeds 10 °C |
| IRF7470PBF | RDS(on) = 7.5 mΩ @ 10 V; lower EAS = 290 mJ; TO-220 package | Limited to ≤60 A continuous; lacks D²-Pak thermal performance | Only suitable for legacy designs with through-hole assembly and lower power density requirements |
Compared with STL220N6F7 and IRF7470PBF, IPP070N06L G delivers optimal balance of low RDS(on), logic-level drive, and avalanche ruggedness in surface-mount form-making it preferred for new 48 V industrial and automotive power stages requiring compact, high-reliability switching.
Availability
IPP070N06L G is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, uninterruptible power supplies, and automotive DC-DC converters requiring stable component supply across multi-year production cycles.
Supply support for IPP070N06L G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
This part belongs to Infineon's OptiMOS™ 6 family, engineered specifically for high-efficiency, high-power-density switching in 24–48 V systems with emphasis on low gate charge, low RDS(on), and robust avalanche capability.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The IPP070N06L G has a maximum junction temperature (Tj) rating of 175 °C. Continuous operation at this limit requires strict thermal design: RthJC = 0.9 K/W and RthCA ≤ 0.5 K/W are necessary to sustain 80 A at Tc = 100 °C. Derating curves in Figure 1 of the datasheet define safe operating area boundaries based on pulse width and duty cycle.
Does this MOSFET require a gate resistor for stability in hard-switched applications?
Yes-a gate resistor (RG) of 5–15 Ω is recommended to dampen ringing and prevent spurious turn-on due to dv/dt coupling. The device's low input capacitance (Ciss = 3,400 pF) and moderate Qgd make it susceptible to oscillation without controlled gate drive impedance, especially when paired with high-speed drivers like the 1EDN7512B.
Can IPP070N06L G be used in parallel configurations?
Yes, but only with matched devices and symmetrical PCB layout. Its positive temperature coefficient for RDS(on) above 25 °C enables current sharing; however, gate drive skew must be <5 ns and source inductance balanced to within 0.2 nH to avoid dynamic current imbalance. Parallel use beyond two units requires individual gate resistors and Kelvin source connections.
Is the exposed drain tab electrically isolated from the PCB mounting surface?
No-the drain is internally connected to the exposed metal tab, which serves as both thermal path and electrical node. When mounted on a heatsink, the tab must be electrically insulated using a dielectric pad or ceramic washer unless the heatsink is floating or referenced to drain potential. Standard FR-4 PCB layout requires solder mask clearance around the tab pad to prevent shorting.
IPP070N06L G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 126 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4300 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 214W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3
IPP070N06L G FAQ
1.How can I place an order for IPP070N06L G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPP070N06L G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPP070N06L G reliable?
The price and inventory of IPP070N06L G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP070N06L G is usually 5 days.
3.What payment methods are accepted for IPP070N06L G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP070N06L G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPP070N06L G?
IPP070N06L G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPP070N06L G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPP070N06L G?
For technical support, including IPP070N06L G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP070N06L G requirements.
6.How does Aetrix verify that IPP070N06L G is sourced from the original manufacturer or authorized distributors?
All IPP070N06L G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP070N06L G meets industry standards.
7.What is the process for return or replacement of IPP070N06L G?
All IPP070N06L G units undergo pre-shipment inspection (PSI). If there is an issue with IPP070N06L G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPP070N06L G part is unused and in its original packaging.
Return procedure for IPP070N06L G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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