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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP070N06N G

Name: IPP070N06N G
Brand: Infineon Technologies
SKU: IPP070N06N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP070N06N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP070N06N G.pdf

Description:: MOSFET N-CH 60V 80A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP070N06N G from Infineon Technologies is a 60 V, 80 A, 7.0 mΩ N-channel enhancement-mode MOSFET in PG-TO-263-3 (D²-Pak) package, optimized for high-efficiency synchronous rectification and DC-DC power conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPP070N06N G datasheet, IPP070N06N G pinout, IPP070N06N G application, or IPP070N06N G equivalent, key selection criteria include R_DS(on) at 10 V gate drive, pulsed drain current rating, thermal resistance (R_thJC = 0.9 K/W), avalanche capability, and lead-free RoHS-compliant packaging.

Technical Context

This device uses Infineon's OptiMOS™ 5 technology, featuring a trench-gate superjunction structure that delivers low conduction loss and fast switching with Q_g = 42 nC (typ.) and Q_gd/Q_gs ratio < 0.35. It supports hard-switched topologies up to 1 MHz with minimal gate drive energy.

Designed for unidirectional high-side or low-side switching, it integrates a robust body diode with t_rr = 45 ns (typ.) and Q_rr = 38 nC (typ.), enabling efficient operation in synchronous buck converters without external Schottky replacement.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage suitable for 48 V input bus systems with 20% derating margin
I_D (continuous)	80 A at T_C = 25 °C - Supports high-current output stages in 12 V/5 V POL converters
R_DS(on)	7.0 mΩ max at V_GS = 10 V - Enables <1 W conduction loss at 30 A in 12 V output rails
Q_g	42 nC typ. - Reduces gate driver power demand and enables use of low-cost SOT-23 drivers
R_thJC	0.9 K/W - Allows >70 W continuous dissipation with standard heatsink mounting on 2-layer PCB
E_AS	420 mJ - Withstands single-pulse inductive energy in 48 V telecom hot-swap circuits
Body diode t_rr	45 ns typ. - Limits reverse recovery loss during dead-time in synchronous rectification

Pinout & Package

PG-TO-263-3 (D²-Pak) package with exposed drain pad for enhanced thermal performance; thermally optimized for surface-mount assembly on copper-filled pads with ≥2 cm² cooling area.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-impedance return path; connected to power ground plane in low-side switch configuration
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <1 µA bias; sensitive to ESD and layout-induced ringing
Pin 3 (Drain)	Power output / high-side connection	Internally tied to exposed metal pad; must be soldered to large copper pour for thermal and current handling

Key Features

Feature	Design Value
OptiMOS™ 5 trench technology	Enables 30% lower R_DS(on) × Q_g figure-of-merit vs. prior generation, improving efficiency at 500 kHz–1 MHz
Lead-free and RoHS-compliant	Meets IPC-J-STD-020D reflow profile up to 260 °C peak, compatible with lead-free SMT lines
100% avalanche tested	Guarantees single-pulse E_AS ≥ 420 mJ per unit, eliminating need for external snubbers in inductive loads
Enhanced body diode softness	Reduces EMI during commutation by limiting di/dt overshoot in synchronous rectifier mode

Applications

Server VRM

Telecom DC-DC

Use Scenario: 48 V to 12 V intermediate bus converter in dual-processor rack servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved 2-phase buck topology operating at 600 kHz.

Use Value: Achieves >95% efficiency at 60 A load with junction temperature maintained below 110 °C using 2-layer PCB cooling.

Use Scenario: 54 V input to 3.3 V/20 A point-of-load regulator in 5G base station RF power modules.

IC Role / Device Role / Timing Role: High-side switch in non-isolated buck converter with active current sensing.

Use Value: Delivers stable output under 10 A/µs transient load steps due to low Q_gd/Q_gs ratio and fast turn-off.

Industrial SMPS

EV Onboard Charger

Use Scenario: 380 V PFC front-end followed by 400 V to 24 V isolated DC-DC for PLC I/O power rails.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant converter operating at 300–500 kHz.

Use Value: Reduces secondary-side conduction loss by 40% vs. Schottky diodes, lowering thermal stress on transformer winding insulation.

Use Scenario: Bidirectional DC-DC stage in 800 V EV onboard charger managing battery-to-grid and grid-to-battery power flow.

IC Role / Device Role / Timing Role: Unidirectional high-side switch in 400 V boost stage during AC charging mode.

Use Value: Survives repetitive 60 V inductive flyback transients during contactor bounce without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 5.2 mΩ @ 10 V, Q_g = 58 nC - lower R_DS(on) but higher gate charge	Better conduction loss at <20 A; less suitable for >1 MHz switching due to higher Q_g	Prefer for high-current, low-frequency (<300 kHz) industrial motor drives
IRF7470PBF	R_DS(on) = 8.5 mΩ @ 10 V, R_thJC = 1.2 K/W - higher on-resistance and thermal resistance	Limited to ≤50 A continuous; requires larger heatsink for same power dissipation	Acceptable for cost-sensitive 48 V telecom systems with relaxed thermal budget

Compared with STL220N6F7 and IRF7470PBF, IPP070N06N G offers optimal balance of low R_DS(on), moderate Q_g, and superior thermal performance - making it preferred for high-density, high-frequency server and telecom power stages where board space and thermal management are constrained.

Availability

IPP070N06N G is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial SMPS requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for IPP070N06N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in data center, telecom, and industrial power supplies where low R_DS(on) × Q_g and robust avalanche capability are critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature (T_j) is 175 °C, but continuous operation above 150 °C is not recommended. Derating curves in the datasheet show that at T_C = 100 °C, the device supports only 42 A continuous drain current - design margins should maintain T_j ≤ 135 °C for 10-year reliability in telecom applications.

Is IPP070N06N G suitable for paralleling multiple devices?

Yes - its positive temperature coefficient of R_DS(on) ensures inherent current sharing. Layout must ensure matched gate loop inductance and symmetrical source routing; gate resistors ≥4.7 Ω per device are recommended to suppress oscillation during turn-on in parallel configurations.

Does the body diode support synchronous rectification without external control?

No - the body diode conducts only during dead time or fault conditions. For synchronous rectification, external gate control (e.g., from a dedicated driver IC or controller) is required to actively turn on the MOSFET during the diode conduction interval, leveraging its lower V_SD than a discrete Schottky.

What is the recommended PCB layout for thermal performance?

Use ≥2 cm² of 2-oz copper connected directly to the exposed drain pad via ≥6 thermal vias (0.3 mm diameter, 0.6 mm pitch). Keep gate traces short and shielded from drain switching noise; place 100 nF ceramic decoupling capacitor within 5 mm of the source pin to minimize high-frequency ground bounce.

IPP070N06N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 180µA

Gate Charge (Qg) (Max) @ Vgs:: 118 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4100 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP070N06N G FAQ

1.How can I place an order for IPP070N06N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP070N06N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP070N06N G reliable?

The price and inventory of IPP070N06N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP070N06N G is usually 5 days.

3.What payment methods are accepted for IPP070N06N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP070N06N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP070N06N G?

IPP070N06N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP070N06N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP070N06N G?

For technical support, including IPP070N06N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP070N06N G requirements.

6.How does Aetrix verify that IPP070N06N G is sourced from the original manufacturer or authorized distributors?

All IPP070N06N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP070N06N G meets industry standards.

7.What is the process for return or replacement of IPP070N06N G?

All IPP070N06N G units undergo pre-shipment inspection (PSI). If there is an issue with IPP070N06N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP070N06N G part is unused and in its original packaging.

Return procedure for IPP070N06N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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