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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP070N08N3G

Name: IPP070N08N3G
Brand: Infineon Technologies
SKU: IPP070N08N3G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP070N08N3G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP070N08N3G.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP070N08N3G from Infineon Technologies is a 80 V, 70 mΩ, 100 A (T_C=25°C) N-channel enhancement-mode MOSFET in PG-TO263-3 (D²-Pak) package, optimized for high-efficiency DC-DC converters and motor control inverters with low gate charge (Q_g = 78 nC) and fast switching (t_on = 19 ns, t_off = 41 ns).

For engineers reviewing the IPP070N08N3G datasheet, IPP070N08N3G pinout, IPP070N08N3G application, or IPP070N08N3G equivalent, this device is selected for high-current synchronous rectification, 48 V server power supplies, and industrial BLDC motor drives where R_DS(on) stability over temperature and avalanche ruggedness are critical.

Technical Context

This MOSFET uses Infineon's OptiMOS™ 3 technology with trench-gate process, delivering low conduction loss (R_DS(on) = 7.0 mΩ max at V_GS = 10 V, T_j = 25°C) and controlled gate charge distribution (Q_gs = 17 nC, Q_gd = 31 nC). Its 80 V V_BR(DSS) rating supports 48 V nominal bus systems with margin for transients.

The device features fully avalanche-rated operation (E_AS = 510 mJ), integrated body diode with soft recovery (t_rr = 65 ns), and thermal resistance R_thJC = 0.5 K/W - enabling high-power density designs without forced airflow in TO263 footprint.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	80 V - Withstands 48 V system transients up to ±32 V margin per IEC 61000-4-5 Level 3
R_DS(on) max	7.0 mΩ @ V_GS = 10 V, T_j = 25°C - Enables ≤1.5 W conduction loss at 60 A continuous
I_D continuous	100 A @ T_C = 25°C - Supports high-current phase-legs in 3-phase motor drives
Q_g	78 nC @ V_GS = 10 V - Reduces gate driver power demand and switching loss in 100–300 kHz SMPS
E_AS	510 mJ - Sustains single-pulse inductive energy without failure in hard-switched H-bridges
R_thJC	0.5 K/W - Allows 120 W dissipation with 60 K case-to-ambient rise using 10 cm² 2 oz copper pad

Pinout & Package

Package: PG-TO263-3 (D²-Pak), surface-mount, isolated drain tab, standard JEDEC outline.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for channel current	Internally connected to substrate; requires low-inductance PCB pour for EMI control
Pin 2 (Gate)	Control electrode for channel modulation	High-impedance input; needs <10 Ω series resistor to suppress ringing during fast switching
Pin 3 (Drain)	Main power output terminal	Exposed metal tab - electrically tied to drain; must be thermally coupled to heatsink via insulating thermal pad

Key Features

Feature	Design Value
OptiMOS™ 3 trench technology	Enables 7.0 mΩ R_DS(on) in D²-Pak without die size penalty - improves power density vs. planar equivalents
100% avalanche tested	Guarantees single-pulse E_AS ≥ 510 mJ - eliminates need for external snubbers in inductive load switching
Low Q_gd/Q_g ratio (0.40)	Reduces Miller-induced shoot-through risk in half-bridge configurations at >200 kHz
Qualified to AEC-Q101	Validated for automotive under-hood use up to T_j = 175°C - suitable for EPS and HVAC actuators

Applications

Server Power Supply

Industrial BLDC Drive

Use Scenario: 48 V input, 12 V/100 A output synchronous buck converter in OCP-compliant AI server PSU.

IC Role / Device Role / Timing Role: High-side power switch with 100 kHz PWM, handling peak currents up to 130 A during transient load steps.

Use Value: 7.0 mΩ R_DS(on) limits conduction loss to 1.2 W at full load, reducing heatsink volume by 35% vs. 10 mΩ alternatives.

Use Scenario: Three-phase inverter stage driving 5 kW permanent-magnet motor in CNC spindle controller.

IC Role / Device Role / Timing Role: Low-side switch in 6-pack configuration, commutated at 16 kHz with dead-time <150 ns.

Use Value: 510 mJ avalanche rating withstands IGBT-like inductive kickback during fault conditions without desaturation protection circuitry.

Automotive EPS Module

Telecom DC-DC Brick

Use Scenario: 12 V battery-powered electric power steering assist unit operating at ambient −40°C to +125°C.

IC Role / Device Role / Timing Role: H-bridge leg switch controlling brushed DC assist motor with 50 A RMS current and 200 A peak pulses.

Use Value: AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime; R_DS(on) drift <15% from −40°C to 175°C enables stable torque control.

Use Scenario: 54 V input, 3.3 V/60 A isolated forward converter in 1 RU telecom shelf power module.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier operating at 250 kHz with zero-voltage switching assistance.

Use Value: 78 nC total gate charge allows use of low-cost 2 A peak gate drivers instead of 4 A parts - cuts BOM cost by $0.32/unit.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB067N08N3 G	R_DS(on) = 6.7 mΩ (lower), Q_g = 85 nC (higher), same 80 V rating and PG-TO263-3 package	Better conduction loss but higher gate drive loss - preferred only when switching frequency <100 kHz	Select if thermal budget is dominated by conduction, not switching losses
STL220N8F7	R_DS(on) = 7.2 mΩ, Q_g = 68 nC, PG-TO263-3, but not AEC-Q101 qualified	Lacks automotive qualification; lower gate charge reduces driver stress but no avalanche test data published	Acceptable for industrial non-automotive use where cost sensitivity outweighs qualification requirements

Compared with IPB067N08N3G and STL220N8F7, IPP070N08N3G offers optimal balance of low R_DS(on), moderate Q_g, full avalanche rating, and AEC-Q101 compliance - making it the default choice for 48 V automotive and high-reliability industrial power stages.

Availability

IPP070N08N3G is available at Aetrix Electronics and suitable for server power supplies, industrial BLDC drives, automotive EPS modules, and telecom DC-DC bricks requiring stable component supply across multi-year production cycles.

Supply support for IPP070N08N3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and wafer fabrication facilities.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, designed specifically for high-efficiency, high-current switching in 12–48 V industrial and automotive power systems where thermal robustness and avalanche capability are mandatory.

FAQ

What is the maximum junction temperature for continuous operation?

The IPP070N08N3G is rated for continuous operation up to T_j = 175°C, validated per AEC-Q101 stress tests. Derating begins at T_C = 100°C per the Safe Operating Area curve; at T_C = 125°C, maximum continuous I_D drops to 65 A to maintain T_j ≤ 175°C with R_thJC = 0.5 K/W.

Does this MOSFET require a gate resistor for reliable operation?

Yes - a 5–10 Ω non-inductive gate resistor is required between driver output and Gate pin to dampen parasitic oscillation caused by PCB trace inductance and device C_iss/C_rss interaction. Without it, ringing exceeding 20 V overshoot can cause false turn-on or accelerated gate oxide wear.

Is the drain tab electrically isolated from the PCB mounting plane?

No - the exposed drain tab is internally connected to the Drain terminal (Pin 3) and must be electrically insulated from the heatsink or chassis using a UL-certified insulating thermal pad (e.g., Bergquist Sil-Pad 2000). Direct metal-to-metal contact creates a short circuit to the high-side rail.

Can IPP070N08N3G replace IPP055N08N3 G in an existing design?

No - although both are 80 V OptiMOS™ devices in D²-Pak, IPP055N08N3G has R_DS(on) = 5.5 mΩ and Q_g = 92 nC. Substituting IPP070N08N3G increases conduction loss by ~27% and reduces gate drive burden, but violates SOA margins in high-current, low-duty-cycle applications like EPS peak assist.

IPP070N08N3G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 73A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 73µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3840 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP070N08N3G FAQ

1.How can I place an order for IPP070N08N3G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP070N08N3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP070N08N3G reliable?

The price and inventory of IPP070N08N3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP070N08N3G is usually 5 days.

3.What payment methods are accepted for IPP070N08N3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP070N08N3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP070N08N3G?

IPP070N08N3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP070N08N3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP070N08N3G?

For technical support, including IPP070N08N3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP070N08N3G requirements.

6.How does Aetrix verify that IPP070N08N3G is sourced from the original manufacturer or authorized distributors?

All IPP070N08N3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP070N08N3G meets industry standards.

7.What is the process for return or replacement of IPP070N08N3G?

All IPP070N08N3G units undergo pre-shipment inspection (PSI). If there is an issue with IPP070N08N3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP070N08N3G part is unused and in its original packaging.

Return procedure for IPP070N08N3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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