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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP070N08N3 G

Name: IPP070N08N3 G
Brand: Infineon Technologies
SKU: IPP070N08N3 G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP070N08N3 G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP070N08N3 G.pdf

Description:: MOSFET N-CH 80V 80A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:3,628

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Product details

Overview

IPP070N08N3 G from Infineon Technologies is a 75 V, 100 A, 7.0 mΩ N-channel enhancement-mode power MOSFET in PG-TO263-3 (D²-Pak) package, optimized for high-efficiency DC-DC converters and motor control inverters with low gate charge (Q_g = 78 nC) and fast switching (t_on = 24 ns, t_off = 41 ns). It delivers robust avalanche capability (E_AS = 590 mJ) and operates up to 175 °C junction temperature.

For engineers reviewing the IPP070N08N3 G datasheet, IPP070N08N3 G pinout, IPP070N08N3 G application, or IPP070N08N3 G equivalent, key selection criteria include R_DS(on) at 10 V gate drive, safe operating area (SOA) under pulse conditions, thermal resistance (R_thJC = 0.55 K/W), and gate charge profile for synchronous buck stage design.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, featuring a trench-gate structure with optimized cell pitch and reduced specific on-resistance. Its vertical silicon layout enables high current density while maintaining low gate-to-drain charge (Q_gd = 21 nC) and controlled Miller plateau voltage (~5.5 V).

The device supports hard-switched topologies with rated V_DS = 75 V and guaranteed avalanche energy rating. Its SOA curve is characterized up to 100 µs pulse width, supporting peak currents beyond 200 A under defined case temperature and voltage conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum drain-source blocking voltage; defines maximum bus voltage in half-bridge or buck converter applications.
R_DS(on) @ V_GS = 10 V	7.0 mΩ - On-state resistance at standard gate drive; determines conduction loss in high-current paths (e.g., 100 A yields ~70 W I²R loss).
I_D, continuous @ T_C = 25 °C	100 A - Continuous drain current rating with adequate heatsinking; sets minimum PCB copper area and thermal interface requirements.
Q_g	78 nC - Total gate charge; directly impacts driver IC selection and switching loss in high-frequency (>100 kHz) operation.
R_thJC	0.55 K/W - Junction-to-case thermal resistance; enables calculation of junction temperature rise under known power dissipation and heatsink performance.
E_AS	590 mJ - Single-pulse avalanche energy rating; validates ruggedness during inductive turn-off transients without external snubbers.
t_on/t_off	24 ns / 41 ns - Turn-on/turn-off delay times at V_DD = 48 V, I_D = 50 A; constrains minimum achievable dead time in synchronous rectification.

Pinout & Package

Package: PG-TO263-3 (D²-Pak), surface-mount, isolated drain tab, single-row 3-pin configuration with exposed metal drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node; requires low-inductance routing for EMI control.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate; driven by dedicated gate driver with <10 Ω series resistance to damp ringing.
Pin 3 (Drain)	Power output	Internally connected to exposed copper tab; must be soldered to large PCB copper pour or heatsink for thermal management.

Key Features

Feature	Design Value
Optimized gate charge ratio (Q_gd/Q_g)	27% - Reduces Miller-induced shoot-through risk and improves controllability in high-dV/dt environments.
Enhanced avalanche ruggedness	Rated E_AS = 590 mJ - Eliminates need for external clamping diodes in motor phase-leg or solenoid drive circuits.
Low R_DS(on) × Q_g figure-of-merit	546 mΩ·nC - Balances conduction and switching losses for 100–300 kHz DC-DC designs targeting >96% efficiency.
JEDEC-qualified reliability	AEC-Q101 qualified - Validated for automotive-grade stress testing including HTRB, H3TRB, and UIS, enabling use in engine control modules.
Thermal pad compatibility	Exposed drain tab with IPC-7351B footprint - Supports direct thermal coupling to inner-layer copper planes or external heatsinks via thermal vias.

Applications

Motor Drive Inverter

Server VRM

Use Scenario: 3-phase BLDC inverter for HVAC compressors operating at 48 V bus and 20 kHz PWM.

IC Role / Device Role / Timing Role: High-side and low-side switching element in each leg; handles bidirectional current with body diode commutation.

Use Value: Low R_DS(on) reduces conduction loss at 60 A RMS; fast t_off enables tight dead-time control to prevent cross-conduction.

Use Scenario: 48 V-to-1 V synchronous buck converter for AI accelerator cards requiring >600 A per phase.

IC Role / Device Role / Timing Role: Power stage MOSFET pair (high-side + low-side); switched at 500 kHz with adaptive gate drive.

Use Value: 7.0 mΩ R_DS(on) minimizes I²R loss at full load; low Q_g allows efficient drive with integrated DrMOS controller.

Industrial UPS

Onboard Charger

Use Scenario: Bidirectional DC-DC stage in 400 V battery backup system with 10 kW peak power.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge topology; conducts reverse current during regeneration.

Use Value: Rated avalanche energy ensures reliability during grid fault transitions; 175 °C T_jmax supports derating in sealed enclosures.

Use Scenario: AC/DC PFC + DC/DC stage in 11 kW EV onboard charger with SiC boost and silicon LLC primary.

IC Role / Device Role / Timing Role: Synchronous rectifier in LLC secondary; operated in ZVS mode with body diode soft recovery.

Use Value: Low Q_rr and soft-recovery body diode reduce switching loss and EMI; TO263-3 package enables automated reflow assembly.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB067N08N3 G	R_DS(on) = 6.7 mΩ, Q_g = 85 nC, same PG-TO263-3 package	Lower conduction loss but higher gate drive energy; marginally slower t_on (27 ns)	Preferred where thermal headroom is limited and switching frequency ≤ 200 kHz.
IPI070N08N3 G	Same R_DS(on) and Q_g, but in PG-TO220-3 package with non-isolated tab	Requires insulating hardware; higher R_thJC (0.75 K/W); unsuitable for surface-mount automation	Select only for through-hole prototyping or legacy board redesigns with mechanical mounting constraints.

Compared with IPB067N08N3 G, IPP070N08N3 G trades 0.3 mΩ higher R_DS(on) for 7 nC lower Q_g, improving high-frequency efficiency; versus IPI070N08N3 G, it enables automated assembly and superior thermal performance via isolated D²-Pak mounting.

Availability

IPP070N08N3 G is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant power semiconductors.

Supply support for IPP070N08N3 G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered for high-power-density, high-efficiency switching applications in automotive, industrial, and computing systems where thermal performance and ruggedness are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The device is rated for continuous operation up to T_C = 175 °C, verified per JEDEC JESD51-2. At this case temperature, the maximum continuous drain current drops to 52 A due to thermal derating. Designers must ensure heatsink interface resistance and ambient airflow maintain T_C ≤ 175 °C under worst-case load and ambient conditions.

Does IPP070N08N3 G support paralleling for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) (0.65%/°C) enables stable current sharing when paralleled. Layout must match gate loop inductance and source inductance across all devices; recommended gate resistor tolerance ≤ ±5% and matched PCB trace lengths within 2 mm.

Is the body diode suitable for synchronous rectification without external Schottky?

The integrated body diode exhibits soft reverse recovery (Q_rr = 125 nC, t_rr = 75 ns) and low forward voltage (V_SD = 1.3 V @ 100 A), making it viable for synchronous rectification in LLC and phase-shifted full-bridge topologies up to 300 kHz, provided gate timing avoids hard commutation.

What is the recommended PCB footprint and thermal via pattern?

The official Infineon footprint (document ID: ipb067n08n3_g_pcb_footprint_v1.0.pdf) specifies a 12 mm × 12 mm thermal pad with 25 × 0.5 mm vias (0.3 mm diameter, 0.6 mm annular ring) arranged in 5 × 5 grid. Minimum 2 oz copper on inner layers is required to achieve R_thJA ≤ 2.2 K/W in still air.

IPP070N08N3 G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 73A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 73µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3840 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP070N08N3 G FAQ

1.How can I place an order for IPP070N08N3 G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP070N08N3 G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP070N08N3 G reliable?

The price and inventory of IPP070N08N3 G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP070N08N3 G is usually 5 days.

3.What payment methods are accepted for IPP070N08N3 G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP070N08N3 G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP070N08N3 G?

IPP070N08N3 G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP070N08N3 G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP070N08N3 G?

For technical support, including IPP070N08N3 G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP070N08N3 G requirements.

6.How does Aetrix verify that IPP070N08N3 G is sourced from the original manufacturer or authorized distributors?

All IPP070N08N3 G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP070N08N3 G meets industry standards.

7.What is the process for return or replacement of IPP070N08N3 G?

All IPP070N08N3 G units undergo pre-shipment inspection (PSI). If there is an issue with IPP070N08N3 G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP070N08N3 G part is unused and in its original packaging.

Return procedure for IPP070N08N3 G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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