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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP070N08N3GXKSA1

Name: IPP070N08N3GXKSA1
Brand: Infineon Technologies
SKU: IPP070N08N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP070N08N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP070N08N3GXKSA1.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP070N08N3GXKSA1 from Infineon Technologies is a 80 V, 70 mΩ, 90 A (T_C = 25°C) N-channel enhancement-mode MOSFET in PG-TO263-3 (D²-Pak) package, optimized for high-efficiency DC-DC converters and motor control inverters with low gate charge (Q_g = 42 nC) and fast switching (t_on = 18 ns, t_off = 33 ns).

For engineers reviewing the IPP070N08N3GXKSA1 datasheet, IPP070N08N3GXKSA1 pinout, IPP070N08N3GXKSA1 application, or IPP070N08N3GXKSA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, avalanche energy rating (E_AS = 420 mJ), thermal resistance (R_thJC = 0.65 K/W), and SOA compliance up to 100 µs pulse width.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, featuring trench-gate structure and optimized cell pitch for reduced specific on-resistance and improved figure-of-merit (R_DS(on) × Q_g = 2.94 Ω·nC). It supports unclamped inductive switching with guaranteed single-pulse avalanche capability.

The device operates in enhancement mode with threshold voltage V_GS(th) = 2.0–4.0 V (typ. 2.8 V), exhibits low reverse diode forward voltage (V_SD = 1.3 V @ I_F = 45 A), and maintains R_DS(on) stability over junction temperature range −55°C to 175°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum drain-source blocking voltage; enables use in 48 V bus systems with 20% margin.
R_DS(on) max	70 mΩ @ V_GS = 10 V, T_J = 25°C - Defines conduction loss in high-current power stages; rises to 105 mΩ at 175°C.
I_D continuous	90 A @ T_C = 25°C - Sustained current handling with TO263-3 copper clip package; derates to 57 A at T_C = 100°C.
Q_g	42 nC @ V_GS = 10 V - Total gate charge determines driver strength requirement and switching loss trade-off.
E_AS	420 mJ @ T_J = 25°C - Guaranteed single-pulse avalanche energy; supports robust operation under inductive turn-off stress.
R_thJC	0.65 K/W - Junction-to-case thermal resistance enables high-power dissipation with minimal heatsink footprint.
Q_rr	110 nC @ I_F = 45 A, di/dt = 100 A/µs - Reverse recovery charge impacts body diode commutation losses in synchronous rectification.

Pinout & Package

Package: PG-TO263-3 (D²-Pak) with exposed drain pad for enhanced thermal performance and low-inductance source connection. Standard 3-pin layout with drain connected to tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Primary current return path; connects to PCB ground plane or source node; lowest inductance path for high di/dt.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <1 µA bias; sensitive to ESD; requires RC snubber for ringing suppression.
Pin 3 (Drain)	Power output / high-side switch node	Internally bonded to metal tab; must be soldered to large copper area for thermal and electrical integrity.

Key Features

Feature	Design Value
OptiMOS™ 3 trench technology	Enables 70 mΩ R_DS(on) at 80 V with 42 nC Q_g, improving efficiency in 100–500 kHz switching converters.
Qualified per AEC-Q101	Validated for automotive-grade reliability including HTGB, HTRB, and UIS testing-suitable for engine control and ADAS power stages.
Low Q_rr/Q_g ratio	2.6:1 ratio reduces body-diode conduction loss during dead-time in half-bridge topologies.
Enhanced avalanche ruggedness	420 mJ E_AS allows operation without external clamping in brushed DC motor drives with inductive kickback.
Lead-free and RoHS-compliant	Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles up to 260°C peak.

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: 12 V to 48 V bidirectional buck-boost converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side switch operating at 200 kHz with synchronous rectification.

Use Value: 70 mΩ R_DS(on) and 42 nC Q_g reduce conduction + switching losses to <1.2 W at 60 A, enabling >96% peak efficiency.

Use Scenario: Three-phase inverter stage for 3 kW BLDC pump motor in HVAC systems.

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack IGBT/MOSFET module replacement design.

Use Value: 90 A continuous rating and 0.65 K/W R_thJC allow full-load operation at 85°C ambient without forced air cooling.

Server PSU ORing FETs

Solar Microinverters

Use Scenario: Hot-swap ORing circuit in redundant 48 V server power distribution units.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET for reverse-current blocking and low-loss forward conduction.

Use Value: 2.8 V typical V_GS(th) enables precise gate drive control; 1.3 V V_SD minimizes forward drop during fault conditions.

Use Scenario: DC link switching stage in single-phase transformerless microinverter (250–350 V DC input).

IC Role / Device Role / Timing Role: High-frequency hard-switched switch in interleaved flyback topology.

Use Value: 80 V rating provides 25% margin above 350 V DC link; 420 mJ E_AS withstands transient overvoltage during grid disconnection events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB067N08N3 G	R_DS(on) = 67 mΩ (lower), Q_g = 45 nC (higher), same 80 V rating and PG-TO263-3 package.	Better conduction loss but higher gate drive demand; less suitable for >300 kHz operation due to increased Q_g.	Select when thermal budget dominates over switching frequency constraints.
STL220N8F7AG	R_DS(on) = 72 mΩ, Q_g = 36 nC, 80 V, DPAK package (smaller thermal mass, R_thJC = 1.2 K/W).	Lower gate charge improves high-frequency efficiency but limits continuous current to 75 A at T_C = 25°C.	Select for space-constrained designs where peak efficiency >250 kHz matters more than sustained current.

Compared with IPB067N08N3 G and STL220N8F7AG, IPP070N08N3GXKSA1 balances conduction loss, switching loss, and thermal capability-making it optimal for 100–200 kHz industrial inverters requiring both current headroom and SOA robustness.

Availability

IPP070N08N3GXKSA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and solar microinverters requiring stable component supply and long-term production support.

Supply support for IPP070N08N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 3 family, engineered for high-efficiency power conversion in automotive and industrial applications where low R_DS(on), fast switching, and rugged avalanche performance are critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175°C, and the device is rated for continuous operation up to this limit when thermal design ensures T_J does not exceed it. Derating curves in the datasheet show I_D decreases linearly from 90 A at 25°C case temperature to 0 A at 175°C junction temperature, with R_thJC = 0.65 K/W defining the thermal path.

Is IPP070N08N3GXKSA1 suitable for synchronous rectification in LLC resonant converters?

Yes-it supports synchronous rectification with its low R_DS(on) (70 mΩ), fast body diode (t_rr = 42 ns), and low Q_rr (110 nC), enabling high efficiency at 300–500 kHz. Gate drive must provide clean 10–12 V logic-level signals with tight timing control to avoid shoot-through.

Does this MOSFET require a gate resistor for stability in hard-switched applications?

Yes-a series gate resistor (typically 5–22 Ω) is required to dampen gate oscillation and control dV/dt during switching. The 42 nC Q_g and low C_iss (3010 pF) make it susceptible to ringing without proper gate network design, especially with high-speed drivers and parasitic PCB inductance.

How does the avalanche rating compare to competing 80 V MOSFETs?

With E_AS = 420 mJ at T_J = 25°C, IPP070N08N3GXKSA1 exceeds typical industry values (250–350 mJ) for 80 V devices. This is verified per JEDEC JESD24-11 test conditions and enables reliable operation in unclamped inductive switching without external snubbers in motor drive and relay driving applications.

IPP070N08N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 73A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 73µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3840 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP070N08N3GXKSA1 FAQ

1.How can I place an order for IPP070N08N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP070N08N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP070N08N3GXKSA1 reliable?

The price and inventory of IPP070N08N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP070N08N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP070N08N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP070N08N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP070N08N3GXKSA1?

IPP070N08N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP070N08N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP070N08N3GXKSA1?

For technical support, including IPP070N08N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP070N08N3GXKSA1 requirements.

6.How does Aetrix verify that IPP070N08N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP070N08N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP070N08N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP070N08N3GXKSA1?

All IPP070N08N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP070N08N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP070N08N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPP070N08N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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