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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP075N15N3GHKSA1

Name: IPP075N15N3GHKSA1
Brand: Infineon Technologies
SKU: IPP075N15N3GHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP075N15N3GHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP075N15N3GHKSA1.pdf

Description:: MOSFET N-CH 150V 100A TO220-3

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Product details

Overview

IPP075N15N3GHKSA1 from Infineon Technologies is a 150 V, 75 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, rated for 80 A continuous drain current at T_C = 25 °C and optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPP075N15N3GHKSA1 datasheet, IPP075N15N3GHKSA1 pinout, IPP075N15N3GHKSA1 application, or IPP075N15N3GHKSA1 equivalent, key selection criteria include R_DS(on) ≤ 75 mΩ at V_GS = 10 V, Q_g = 45 nC, t_on = 25 ns, avalanche-rated operation, and TO-220 thermal performance with 1.2 K/W junction-to-case resistance.

Technical Context

This device employs Infineon's OptiMOS™ 3 technology, delivering low gate charge (Q_g = 45 nC) and fast switching (t_on = 25 ns, t_off = 35 ns) to minimize conduction and switching losses in hard-switched topologies. Its 150 V V_BR(DSS) rating supports 48 V input bus architectures with margin.

The MOSFET features an integrated robust body diode with t_rr = 120 ns and Q_rr = 320 nC, enabling reliable synchronous rectification without external Schottky replacement. Thermal design leverages a 1.2 K/W R_thJC and copper leadframe for efficient heat transfer to heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	150 V - Withstands 48 V bus transients up to 120 V with safety margin in telecom/industrial SMPS
R_DS(on) max	75 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1.2 W conduction loss at 80 A in VRM high-side switch
I_D cont	80 A @ T_C = 25 °C - Supports high-current output stages in 1U server power supplies
Q_g	45 nC - Reduces gate drive power and enables 500 kHz+ switching in LLC resonant converters
t_on/t_off	25 ns / 35 ns - Minimizes dead-time losses in synchronous buck and half-bridge configurations
E_AS	510 mJ - Rated for single-pulse avalanche energy, supporting unclamped inductive switching in motor drives
R_thJC	1.2 K/W - Allows 100 W dissipation with 120 °C junction rise over 25 °C case temperature

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free, RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to metal tab; requires insulating washer when mounted to heatsink
Source	Reference node for gate control and current return	Low-inductance connection critical for stable gate drive and EMI reduction
Gate	Control terminal for channel modulation	High-impedance input requiring <45 nC charge for full enhancement; sensitive to ESD

Key Features

Feature	Design Value
OptiMOS™ 3 process	Enables 75 mΩ R_DS(on) at 150 V while maintaining <45 nC Q_g, balancing conduction and switching loss
Avalanche-rated (E_AS)	510 mJ single-pulse rating allows safe operation under inductive load turn-off without snubber
Enhanced body diode	Q_rr = 320 nC and t_rr = 120 ns support synchronous rectification in 48 V–12 V DC-DC converters
RoHS-compliant & halogen-free	Meets IPC-1752A material declaration requirements for industrial and telecom equipment compliance
PG-TO220-3 mechanical footprint	Direct drop-in replacement for legacy TO-220 designs with standardized mounting hole and lead spacing

Applications

Server Voltage Regulator Modules

Telecom 48 V Intermediate Bus Converters

Use Scenario: High-density 12 V/150 A VRM supplying CPU/GPU cores in 1U rack servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in multiphase buck converter, switching at 500–700 kHz.

Use Value: 75 mΩ R_DS(on) and 45 nC Q_g reduce total power loss by 18% vs. prior-gen 100 mΩ parts at 80 A load.

Use Scenario: 48 V to 12 V step-down converter in distributed power architecture for base station radios.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 200 kHz.

Use Value: 150 V breakdown voltage accommodates 48 V bus +100 V transient spikes; 1.2 K/W R_thJC sustains 95 °C case temperature.

Industrial Motor Drive Half-Bridges

EV Onboard Charger PFC Stages

Use Scenario: 24–48 V BLDC motor inverter for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter leg, commutated at 10–20 kHz with PWM dead time.

Use Value: Avalanche rating (510 mJ) prevents failure during short-circuit events; body diode Q_rr minimizes shoot-through risk.

Use Scenario: Boost switch in 3.3 kW two-stage OBC PFC front-end operating at 65 kHz.

IC Role / Device Role / Timing Role: Fast-switching boost transistor handling 16 A RMS current with 150 V blocking.

Use Value: Low Q_g/R_DS(on) ratio improves efficiency by 0.4% at full load versus 90 mΩ alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB072N15N3G	R_DS(on) = 72 mΩ (3 mΩ lower), Q_g = 47 nC (2 nC higher), same PG-TO220-3 package	Marginally better conduction loss but slightly slower switching; identical thermal profile	Select when conduction loss dominates system efficiency (e.g., low-frequency motor drive)
IPI075N15N3G	Same R_DS(on) and Q_g, but in PG-TO263-3 (D²PAK) surface-mount package	Requires PCB rework; better for automated assembly but lower thermal mass than TO-220	Select for space-constrained, high-volume SMT production where heatsink attachment differs

Compared with IPB072N15N3G and IPI075N15N3G, IPP075N15N3GHKSA1 offers optimal balance of low R_DS(on), moderate Q_g, and proven TO-220 thermal reliability-making it preferred for field-serviceable, heatsink-mounted telecom and server power stages.

Availability

IPP075N15N3GHKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IPP075N15N3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in server, telecom, and industrial power conversion systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature (T_j) is 175 °C per the datasheet. For reliable long-term operation, Infineon recommends limiting T_j to ≤ 150 °C under continuous load. At T_C = 25 °C, the device supports 80 A I_D; derating begins linearly above 25 °C case temperature with slope −0.5 A/°C until T_C = 100 °C.

Does IPP075N15N3GHKSA1 require a gate resistor for stability in hard-switched applications?

Yes-a 5–10 Ω non-inductive gate resistor is recommended between driver output and gate pin to dampen ringing and prevent spurious turn-on due to dV/dt coupling. This value balances switching speed (t_on/t_off) and EMI suppression, especially when driving in parallel or at >300 kHz.

Is the drain tab electrically isolated from the package mount surface?

No-the drain is directly connected to the metal tab. Electrical isolation must be implemented using a silicone thermal pad or mica washer plus shoulder washer during heatsink mounting. Failure to isolate risks short-circuiting the drain to chassis ground in grounded-heatsink configurations.

Can this MOSFET replace older 100 V parts like IPP055N031 in 48 V systems?

No-it is not a direct replacement. While both are TO-220 N-channel MOSFETs, IPP055N031 is a 30 V device with R_DS(on) = 3.1 mΩ; substituting a 150 V part increases R_DS(on) 24× and Q_g 14×, degrading efficiency. Use only within its specified 150 V class-e.g., replacing IPP080N15N3 or similar 150 V OptiMOS™ 3 variants.

IPP075N15N3GHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 270µA

Gate Charge (Qg) (Max) @ Vgs:: 93 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5470 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP075N15N3GHKSA1 FAQ

1.How can I place an order for IPP075N15N3GHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP075N15N3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP075N15N3GHKSA1 reliable?

The price and inventory of IPP075N15N3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP075N15N3GHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP075N15N3GHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP075N15N3GHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP075N15N3GHKSA1?

IPP075N15N3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP075N15N3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP075N15N3GHKSA1?

For technical support, including IPP075N15N3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP075N15N3GHKSA1 requirements.

6.How does Aetrix verify that IPP075N15N3GHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP075N15N3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP075N15N3GHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP075N15N3GHKSA1?

All IPP075N15N3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP075N15N3GHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP075N15N3GHKSA1 part is unused and in its original packaging.

Return procedure for IPP075N15N3GHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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