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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP076N15N5AKSA1

Name: IPP076N15N5AKSA1
Brand: Infineon Technologies
SKU: IPP076N15N5AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP076N15N5AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP076N15N5AKSA1.pdf

Description:: MOSFET N-CH 150V 112A TO220-3

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Product details

Overview

IPP076N15N5AKSA1 from Infineon Technologies is a 150 V, 7.6 mΩ N-channel enhancement-mode MOSFET in TO-220-3 package with drain-connected tab, rated for 112 A continuous drain current at T_C = 25 °C and 175 °C maximum junction temperature. It delivers low Q_rr (96 nC), high FOM (Q_g × R_DS(on)), and optimized switching performance for synchronous rectification in server power supplies.

For engineers reviewing the IPP076N15N5AKSA1 datasheet, IPP076N15N5AKSA1 pinout, IPP076N15N5AKSA1 application, or IPP076N15N5AKSA1 equivalent, key selection criteria include verified R_DS(on) ≤ 7.6 mΩ at V_GS = 10 V, Q_rr = 96 nC at dI_F/dt = 100 A/µs, thermal resistance R_thJC = 0.4 K/W, and JEDEC-qualified reliability for industrial power conversion.

Technical Context

This OptiMOS™5 device employs trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining fast switching speed and low gate charge (Q_g = 49–61 nC). Its 150 V V_DS rating and 175 °C T_j(max) support operation in high-voltage DC-DC stages of telecom rectifiers and UPS systems.

The integrated body diode exhibits low V_SD (0.89–1.1 V) and tightly controlled Q_rr (96–192 nC), enabling efficient synchronous rectification without external Schottky diodes. Gate threshold voltage V_GS(th) is specified 3.0–4.6 V, ensuring robust noise immunity in high-noise power environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Withstands up to 150 V drain-source blocking voltage, suitable for 48 V input bus systems with 2× safety margin.
R_DS(on), max	7.6 mΩ at V_GS = 10 V, I_D = 56 A - Enables <1.5 W conduction loss at 100 A in parallel configurations.
I_D, cont	112 A at T_C = 25 °C - Supports high-current output rails in server VRMs and POL converters.
Q_rr	96 nC at V_R = 75 V, dI_F/dt = 100 A/µs - Reduces reverse recovery losses and EMI in hard-switched topologies.
T_j(max)	175 °C - Allows derated operation in thermally constrained enclosures without forced airflow.
R_thJC	0.4 K/W - Enables 214 W power dissipation with minimal heatsink interface resistance.
Q_g	49–61 nC - Low gate drive energy supports >500 kHz switching with standard gate drivers.

Pinout & Package

Package: PG-TO220-3 (TO-220-3) with electrically connected drain tab (Pin 2 and metal tab share same potential). Standard through-hole mounting with isolated mounting hole.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires 10 V drive for full enhancement; gate resistance R_G = 1.1–1.7 Ω internal.
Pin 2 / Tab	Drain	Main high-side current path; tab must be electrically connected to PCB drain net and heatsink.
Pin 3	Source	Reference node for gate drive; connects to power ground or low-side switch source in half-bridge.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g figure-of-merit	Enables high-efficiency, high-frequency operation (>300 kHz) without sacrificing conduction loss.
Low reverse recovery charge (Q_rr)	96 nC minimizes diode-induced switching loss and voltage overshoot during commutation.
175 °C rated junction temperature	Supports sustained operation under transient overload and ambient temperatures up to 85 °C.
Pb-free, halogen-free, RoHS-compliant	Meets IPC-J-STD-609A and IEC61249-2-21 requirements for green manufacturing.
JEDEC-qualified for target applications	Validated per JESD22-A108 and J-STD-020 for industrial power supply lifetime reliability.

Applications

Server VRM High-Side Switch

Telecom Rectifier Synchronous Rectifier

Use Scenario: Primary-side switch in multiphase buck converters delivering 50–100 A at 1.0–1.8 V to CPU/GPU cores.

IC Role / Device Role / Timing Role: High-side power MOSFET operating at 300–600 kHz with gate drive synchronized to PWM controller.

Use Value: 7.6 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 12 mΩ devices; 175 °C rating enables compact heatsink design.

Use Scenario: Secondary-side synchronous rectifier in 48 V input, 12 V output telecom rectifiers handling >80 A continuous output.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by dedicated SR controller with adaptive dead-time control.

Use Value: 96 nC Q_rr and 0.89 V V_SD reduce body-diode conduction loss and improve efficiency by 0.8% at full load.

Industrial UPS Inverter Stage

EV Onboard Charger PFC Switch

Use Scenario: Half-bridge leg in 3 kW three-phase UPS inverters operating at 16 kHz with SiC gate drivers.

IC Role / Device Role / Timing Role: High-voltage switching element in IGBT replacement topology with active clamping.

Use Value: 150 V V_DS and 130 mJ single-pulse avalanche energy ensure robustness against bus transients and short-circuit events.

Use Scenario: Boost switch in 6.6 kW OBC PFC stage operating at 65–100 kHz with digital control.

IC Role / Device Role / Timing Role: Fast-switching, high-current boost transistor requiring low Q_sw and stable R_DS(on) over temperature.

Use Value: 49–61 nC Q_g and 0.4 K/W R_thJC enable high-efficiency operation with minimal gate driver power and thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N15F7	R_DS(on) = 7.5 mΩ (typ), Q_g = 65 nC, T_j(max) = 175 °C, TO-220FP package (isolated tab)	Higher Q_g increases gate drive loss; FP variant offers insulated tab but lower P_tot (130 W)	Select when electrical isolation between tab and PCB is required; verify thermal interface for same power dissipation.
IXTH110N15L2	R_DS(on) = 7.2 mΩ (max), Q_rr = 120 nC, T_j(max) = 175 °C, TO-247 package	Lower R_DS(on) but higher Q_rr; TO-247 allows higher P_tot (300 W) but larger footprint	Select for higher power density designs where board space permits TO-247; confirm Q_rr impact on EMI filtering.

Compared with STP110N15F7 and IXTH110N15L2, IPP076N15N5AKSA1 offers the lowest Q_rr (96 nC) and best FOM for high-frequency synchronous rectification, while maintaining identical thermal robustness and JEDEC qualification-making it optimal for space-constrained, high-efficiency server and telecom power stages.

Availability

IPP076N15N5AKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom rectifiers, industrial UPS inverters, and EV onboard charger PFC stages requiring stable component supply and long-term lifecycle support.

Supply support for IPP076N15N5AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™5 family, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial power supplies-emphasizing low R_DS(on), low Q_g, and rugged avalanche capability.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPP076N15N5AKSA1 supports 79 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits imposed by R_thJC = 0.4 K/W and junction-to-case power transfer constraints-not ambient temperature dependence.

Is the drain tab electrically isolated from Pin 2?

No-the drain tab and Pin 2 are internally connected and share the same drain potential. The TO-220-3 package uses a non-isolated tab configuration; electrical isolation requires a TO-220FP variant or insulating hardware during mounting.

Does this MOSFET require a negative gate turn-off voltage?

No-this device has a standard enhancement-mode gate structure with V_GS(th) = 3.0–4.6 V and no requirement for negative gate bias. Gate drive can operate from 0 V to +10 V or +12 V; -20 V absolute maximum rating is for fault protection only.

Can IPP076N15N5AKSA1 replace IPP055N15N5 in existing designs?

No-while both are OptiMOS™5 150 V devices, IPP055N15N5 has R_DS(on) = 5.5 mΩ and higher Q_g (68 nC). Substituting IPP076N15N5AKSA1 increases conduction loss by ~38% and alters gate drive timing; layout and thermal validation are mandatory before replacement.

IPP076N15N5AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 112A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 7.6mOhm @ 56A, 10

Vgs(th) (Max) @ Id:: 4.6V @ 160µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4700 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP076N15N5AKSA1 FAQ

1.How can I place an order for IPP076N15N5AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP076N15N5AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP076N15N5AKSA1 reliable?

The price and inventory of IPP076N15N5AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP076N15N5AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP076N15N5AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP076N15N5AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP076N15N5AKSA1?

IPP076N15N5AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP076N15N5AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP076N15N5AKSA1?

For technical support, including IPP076N15N5AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP076N15N5AKSA1 requirements.

6.How does Aetrix verify that IPP076N15N5AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP076N15N5AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP076N15N5AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP076N15N5AKSA1?

All IPP076N15N5AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP076N15N5AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP076N15N5AKSA1 part is unused and in its original packaging.

Return procedure for IPP076N15N5AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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