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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP07N03LB G

Name: IPP07N03LB G
Brand: Infineon Technologies
SKU: IPP07N03LB G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP07N03LB G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP07N03LB G.pdf

Description:: MOSFET N-CH 30V 50A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:7,970

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Product details

Overview

IPP07N03LB G from Infineon Technologies is an N-channel logic-level Power MOSFET in PG-TO220-3-1 package, rated for 30 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 6.6 mΩ R_DS(on) max at V_GS = 10 V. It features dv/dt ruggedness, 175 °C operation, and is optimized for high-frequency DC/DC converters.

For engineers reviewing the IPP07N03LB G datasheet, IPP07N03LB G pinout, IPP07N03LB G application, or IPP07N03LB G equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), 1.8 K/W junction-to-case thermal resistance, and robust avalanche energy rating of 164 mJ under defined test conditions.

Technical Context

This OptiMOS®2 device uses a trench-gate silicon process to achieve enhanced switching efficiency and thermal performance. Its logic-level gate drive (V_GS(th) = 1.2–2.0 V) enables direct interfacing with 3.3 V and 5 V controllers, while the 9.6 mΩ R_DS(on) max at 4.5 V ensures low conduction loss in synchronous rectification stages.

The MOSFET supports fast switching with t_r = 6–9 ns and t_f = 4.0–6.0 ns under standard test conditions (R_G = 2.7 Ω), and exhibits controlled reverse recovery (Q_rr = 10 nC) and low output charge (Q_oss = 17–22 nC), critical for ZVS and resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V input bus applications with margin
R_DS(on) max	6.6 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 50 A
I_D continuous	50 A at T_C = 25 °C - Sustained current capability with heatsink mounting
E_AS	164 mJ - Avalanche energy rating supports non-clamped inductive switching stress
Q_g total	19–25 nC - Gate drive power requirement for 500 kHz switching at 10 V drive
R_thJC	1.8 K/W - Thermal path efficiency enabling >80 W dissipation with modest heatsinking
dv/dt rating	6 kV/µs - Immunity to false turn-on in high-slew-rate half-bridge environments

Pinout & Package

Package: PG-TO220-3-1 - Through-hole, isolated tab, vertical mounting with drain-connected tab and insulated mounting hole.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node
Pin 2 (Gate)	Control input	Logic-level compatible; requires <25 nC total gate charge for full enhancement
Pin 3 (Drain)	Power output / high-side connection	Internally bonded to metal tab; electrically connected to heatsink mounting surface

Key Features

Feature	Design Value
Logic-level gate threshold	V_GS(th) = 1.2–2.0 V - Direct drive from microcontrollers and PWM ICs without level-shifting
Low R_DS(on) × Q_g FOM	~125 mΩ·nC - Optimized trade-off between conduction and switching losses in 300–1000 kHz converters
175 °C maximum junction temperature	Extended thermal headroom for sealed or high-ambient industrial power supplies
dv/dt ruggedness	6 kV/µs - Reliable operation in hard-switched half-bridges without external snubbers
RoHS-compliant lead plating	Pb-free terminations - Compliant with EU RoHS Directive 2011/65/EU and JEDEC J-STD-20 reflow profiles

Applications

Server VRMs

Industrial DC/DC Modules

Use Scenario: Point-of-load regulation in 1U server motherboards with 48 V input and 0.8–1.8 V output.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter stage.

Use Value: 6.6 mΩ R_DS(on) minimizes I²R loss at 50 A per phase; 25 nC Q_g enables efficient 1 MHz operation.

Use Scenario: Isolated 24 V to 5 V/12 V DC/DC conversion in programmable logic controllers (PLCs).

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or LLC resonant converter.

Use Value: 164 mJ E_AS withstands transformer leakage inductance energy; 175 °C rating supports derating in enclosed enclosures.

Automotive Body Control Units

Telecom Power Supplies

Use Scenario: Load switching for HVAC actuators and lighting drivers in 12 V battery systems.

IC Role / Device Role / Timing Role: Low-side load switch with integrated reverse diode for inductive load freewheeling.

Use Value: V_SD = 0.94–1.2 V at 50 A ensures low-loss flyback; 50 A I_S rating handles motor stall currents.

Use Scenario: 48 V intermediate bus conversion in 5G base station power shelves.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge topology.

Use Value: Q_oss = 17–22 nC reduces turn-off loss during ZVS transitions; 1.8 K/W R_thJC supports forced-air cooling at >80 W.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF3L	R_DS(on) = 7.5 mΩ @ 10 V; Q_g = 35 nC; TO-220FP package (lower P_tot)	Higher gate drive power required; less suitable for >500 kHz operation	Prefer IPP07N03LB G where switching frequency exceeds 300 kHz or thermal budget is tight
IRF7470PBF	R_DS(on) = 5.8 mΩ @ 10 V; Q_g = 28 nC; SO-8 package (lower current rating)	Max I_D = 30 A continuous; unsuitable for 50 A PCB-mount designs	Prefer IPP07N03LB G for through-hole, high-current, high-temperature applications requiring >40 A

Compared with STP75NF3L and IRF7470PBF, IPP07N03LB G delivers superior thermal performance (1.8 K/W vs ≥2.5 K/W), higher current capability (50 A vs ≤30 A), and lower switching loss per cycle due to its optimized FOM - making it preferred for thermally constrained, high-frequency, high-power-density designs.

Availability

IPP07N03LB G is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC modules, and automotive body control units requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPP07N03LB G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS®2 family, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing, telecom, and industrial power supplies.

FAQ

Is IPP07N03LB G suitable for synchronous rectification in a 48 V to 12 V buck converter?

Yes. With R_DS(on) = 6.6 mΩ max at 10 V and logic-level gate threshold (1.2–2.0 V), it supports efficient synchronous rectification at up to 1 MHz. Its 50 A continuous rating and 1.8 K/W thermal resistance allow reliable operation at full load with standard TO-220 heatsinking.

What is the maximum recommended gate resistor for hard-switched operation?

A gate resistor of 2.7 Ω is specified in the datasheet for switching characterization (t_r, t_f). For hard-switched applications, values between 2.2 Ω and 4.7 Ω balance switching speed and gate oscillation suppression; lower values increase EMI risk without meaningful loss reduction beyond 1 MHz.

Does IPP07N03LB G have an integrated body diode, and what is its reverse recovery performance?

Yes - it includes a monolithic body diode rated for 50 A continuous forward current. Its reverse recovery charge Q_rr is 10 nC (typ.) under V_R = 15 V, I_F = 50 A, di_F/dt = 400 A/µs, enabling use in freewheeling and synchronous rectifier roles with predictable recovery behavior.

Can IPP07N03LB G be mounted directly to a heatsink without electrical isolation?

No - the drain is internally connected to the metal tab. Electrical isolation is mandatory when mounting to a conductive heatsink. Use UL-certified insulating pads (e.g., mica or ceramic) and shoulder washers to maintain creepage/clearance and prevent short circuits.

IPP07N03LB G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2782 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP07N03LB G FAQ

1.How can I place an order for IPP07N03LB G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP07N03LB G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP07N03LB G reliable?

The price and inventory of IPP07N03LB G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP07N03LB G is usually 5 days.

3.What payment methods are accepted for IPP07N03LB G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP07N03LB G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP07N03LB G?

IPP07N03LB G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP07N03LB G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP07N03LB G?

For technical support, including IPP07N03LB G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP07N03LB G requirements.

6.How does Aetrix verify that IPP07N03LB G is sourced from the original manufacturer or authorized distributors?

All IPP07N03LB G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP07N03LB G meets industry standards.

7.What is the process for return or replacement of IPP07N03LB G?

All IPP07N03LB G units undergo pre-shipment inspection (PSI). If there is an issue with IPP07N03LB G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP07N03LB G part is unused and in its original packaging.

Return procedure for IPP07N03LB G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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