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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP080N03L G

Name: IPP080N03L G
Brand: Infineon Technologies
SKU: IPP080N03L G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP080N03L G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP080N03L G.pdf

Description:: MOSFET N-CH 30V 50A TO220-3

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Product details

Overview

IPP080N03L G from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO220-3-1 package, rated for 30 V V_DS, 8.0 mΩ R_DS(on) at V_GS = 10 V, and 50 A continuous drain current at T_C = 25 °C. It features avalanche rating, low gate charge (Q_g = 8.7 nC), and optimized FOM for high-efficiency DC/DC converters and SMPS primary-side switching.

For engineers reviewing the IPP080N03L G datasheet, IPP080N03L G pinout, IPP080N03L G application, or IPP080N03L G equivalent, key selection criteria include R_DS(on) vs. gate drive voltage, single-pulse avalanche energy (E_AS = 50 mJ), thermal resistance (R_thJC = 3.2 K/W), and diode reverse recovery charge (Q_rr = 10 nC) in synchronous rectification designs.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, delivering enhanced conduction and switching trade-offs via reduced gate charge × R_DS(on) figure-of-merit. Its logic-level gate threshold (V_GS(th) = 1–2.2 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

The device integrates a robust body diode with low forward voltage (V_SD = 0.91–1.1 V at I_F = 30 A, T_j = 25 °C) and controlled reverse recovery (Q_rr = 10 nC), supporting high-frequency synchronous rectification and bidirectional power flow in buck-boost and LLC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input rail systems with margin
R_DS(on) max	8.0 mΩ at V_GS = 10 V - Enables <1.2 W conduction loss at 40 A
I_D cont.	50 A at T_C = 25 °C - Supports high-current output stages in server VRMs
Q_g	8.7 nC - Reduces gate driver power demand and switching losses below 1 MHz
E_AS	50 mJ - Withstands single-pulse inductive energy in hard-switched flyback or PFC
R_thJC	3.2 K/W - Allows 15 W dissipation with ≤48 K temperature rise above case
Q_rr	10 nC - Limits diode reverse recovery loss and EMI in synchronous rectifiers

Pinout & Package

IPP080N03L G uses the PG-TO220-3-1 package: insulated plastic case with vertical mounting, drain-connected tab (pin 2), source (pin 1), and gate (pin 3). Thermal path optimized via metal tab soldered to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path and PCB ground plane
Pin 2 (Drain)	Drain terminal / heat sink pad	High-current power path; electrically and thermally coupled to heatsink via isolated tab
Pin 3 (Gate)	Control input	High-impedance MOS gate requiring <10 nC charge for full enhancement at 4.5 V

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - compatible with standard microcontroller GPIOs
Avalanche-rated	Rated for repetitive single-pulse avalanche (I_AS = 50 A, E_AS = 50 mJ) - eliminates need for external snubbers in inductive loads
Low Q_g × R_DS(on)	FOM = 69.6 mΩ·nC - improves efficiency in 300–1000 kHz DC/DC converters
RoHS & halogen-free	Meets IEC61249-2-21 and JEDEC J-STD-20 - compliant for automotive and industrial end-equipment

Applications

Server Voltage Regulator Modules (VRMs)

Industrial DC/DC Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A).

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 500–800 kHz with synchronous rectification.

Use Value: 8.0 mΩ R_DS(on) minimizes conduction loss; low Q_g reduces gate drive loss and enables fast transitions within tight dead-time constraints.

Use Scenario: Isolated 24 V to 5 V/12 V DC/DC module for PLC I/O power supplies.

IC Role / Device Role / Timing Role: Active clamp flyback or forward converter main switch handling 30 V input transients.

Use Value: 30 V V_DS rating with 20 % margin over 24 V nominal; avalanche capability withstands transformer leakage spikes without clamping circuitry.

Automotive Body Control Modules (BCMs)

USB-C PD Power Delivery

Use Scenario: Load switch for 12 V battery-fed lighting or motor drivers with reverse polarity protection.

IC Role / Device Role / Timing Role: Low-side power switch controlled by 3.3 V MCU with integrated diagnostics.

Use Value: Logic-level V_GS(th) ensures reliable turn-on from 3.3 V IO; robust body diode supports freewheeling in inductive loads.

Use Scenario: Synchronous rectifier in 20–100 W USB-C PD adapter secondary side.

IC Role / Device Role / Timing Role: Fast-recovery, low-V_SD MOSFET replacing Schottky diode in LLC resonant converter.

Use Value: Q_rr = 10 nC and V_SD = 0.91 V reduce switching loss and thermal stress versus 45 V Schottky alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB080N03L G	SMD PG-TO263-3 package; identical electrical specs but lower R_thJA on PCB (40 K/W vs. 62 K/W)	Better suited for space-constrained, high-density PCB layouts without discrete heatsink	Select when board-level thermal management dominates over mechanical mounting flexibility
IRL3803PBF	Higher R_DS(on) (12 mΩ), higher Q_g (22 nC), same V_DS and package	Less efficient at >30 A; requires stronger gate driver; not avalanche-rated	Acceptable only in cost-sensitive, low-frequency (<200 kHz), non-avalanche-critical applications

Compared with IPB080N03L G, the SMD variant offers superior PCB thermal performance but sacrifices mechanical mounting versatility; versus IRL3803PBF, IPP080N03L G delivers 33 % lower conduction loss, 60 % less gate charge, and guaranteed avalanche ruggedness-critical for reliability in high-dV/dt SMPS environments.

Availability

IPP080N03L G is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and automotive body control modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPP080N03L G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the OptiMOS™ 3 logic-level power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in 12–24 V input DC/DC conversion and load switching applications.

FAQ

Is IPP080N03L G suitable for 3.3 V gate drive?

Yes. With a gate threshold voltage range of 1.0–2.2 V and full enhancement achievable at V_GS = 4.5 V, IPP080N03L G is explicitly designed for logic-level drive. At 3.3 V, it delivers usable R_DS(on) ≈ 11.9 mΩ (max) at I_D = 30 A, making it viable for medium-current, low-duty-cycle applications where thermal margin permits.

What is the maximum safe operating frequency for this MOSFET?

Based on its dynamic parameters-Q_g = 8.7 nC, C_iss = 1400–1900 pF, and t_f = 2.8 ns-the device supports clean switching up to 1.5 MHz in well-designed gate-drive circuits with R_G ≤ 5 Ω. Practical limits are set by layout-induced ringing and thermal accumulation; sustained operation above 1 MHz requires careful PCB layout and heatsinking.

Does the body diode support synchronous rectification?

Yes. The integrated body diode has V_SD = 0.91–1.1 V at 30 A and Q_rr = 10 nC, enabling use as a synchronous rectifier in buck, flyback, and LLC converters. Its soft recovery behavior and low stored charge minimize voltage overshoot and EMI during commutation, especially when paired with precise gate timing control.

How does avalanche rating impact system design?

The rated single-pulse avalanche energy of 50 mJ allows IPP080N03L G to safely absorb inductive energy during switching transients-such as transformer leakage spikes or motor turn-off-without external protection. This simplifies layout, reduces BOM count, and improves reliability in unclamped topologies like active-clamp forward or flyback converters operating near peak load.

IPP080N03L G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 47W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP080N03L G FAQ

1.How can I place an order for IPP080N03L G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP080N03L G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP080N03L G reliable?

The price and inventory of IPP080N03L G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP080N03L G is usually 5 days.

3.What payment methods are accepted for IPP080N03L G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP080N03L G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP080N03L G?

IPP080N03L G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP080N03L G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP080N03L G?

For technical support, including IPP080N03L G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP080N03L G requirements.

6.How does Aetrix verify that IPP080N03L G is sourced from the original manufacturer or authorized distributors?

All IPP080N03L G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP080N03L G meets industry standards.

7.What is the process for return or replacement of IPP080N03L G?

All IPP080N03L G units undergo pre-shipment inspection (PSI). If there is an issue with IPP080N03L G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP080N03L G part is unused and in its original packaging.

Return procedure for IPP080N03L G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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