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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP080N06N G

Name: IPP080N06N G
Brand: Infineon Technologies
SKU: IPP080N06N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP080N06N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP080N06N G.pdf

Description:: MOSFET N-CH 60V 80A TO220-3

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Product details

IPP080N06N G from Infineon Technologies

IPP080N06N G from Infineon Technologies is a 60 V, 80 A, N-channel enhancement-mode power MOSFET in PG-TO-263 (D²-Pak) package, optimized for high-efficiency DC-DC conversion and motor control. It features R_DS(on) = 5.4 mΩ at V_GS = 10 V, 170 A peak pulsed drain current, and 100 W continuous power dissipation at T_C = 25 °C. Used in synchronous buck converters for server VRMs.

For engineers reviewing the IPP080N06N G datasheet, IPP080N06N G pinout, IPP080N06N G application, or IPP080N06N G equivalent, key selection criteria include its low gate charge (Q_g = 49 nC), fast switching (t_on = 18 ns), avalanche ruggedness (E_AS = 420 mJ), and thermal resistance (R_thJC = 0.9 K/W).

Technical Context

This MOSFET employs Infineon's OptiMOS™ 6 technology, delivering reduced conduction and switching losses via optimized cell pitch and trench gate design. Its 60 V V_BR(DSS) rating supports 48 V industrial bus and 12 V/24 V automotive subsystems with margin.

The device integrates a robust body diode with t_rr = 67 ns and Q_rr = 107 nC, enabling efficient synchronous rectification and hard-switched flyback operation without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	60 V - Withstands 48 V nominal bus with 25 % safety margin for transient overvoltage in industrial power supplies.
R_DS(on) max @ V_GS = 10 V	5.4 mΩ - Enables ≤ 340 mW conduction loss at 80 A DC, critical for thermally constrained VRM phases.
I_D continuous @ T_C = 25 °C	80 A - Supports high-current output stages in 3–5 kW server PSU half-bridge legs.
Q_g total	49 nC - Reduces gate drive power and enables 1 MHz+ switching in GaN-complementary topologies.
E_AS	420 mJ - Sustains single-pulse inductive energy without failure in motor phase-leg short-circuit events.
R_thJC	0.9 K/W - Allows 100 W dissipation with ≤ 90 K junction-to-case rise, compatible with standard 2-layer PCB copper pours.
t_rr (body diode)	67 ns - Limits reverse recovery loss during commutation in synchronous rectifiers below 500 kHz.

Pinout & Package

Package: PG-TO-263 (D²-Pak), surface-mount, isolated drain tab, 3-pin configuration with exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel channel	Reference node for gate drive; connects to low-side switch common point in half-bridge layouts.
Pin 2 (Gate)	Control electrode	Receives 0–10 V logic-level signal; requires <1 µF local decoupling due to 49 nC Q_g.
Pin 3 (Drain)	High-side current path terminal	Internally bonded to large copper tab; must be soldered to ≥ 10 cm² 2 oz Cu pour for thermal compliance.

Key Features

Feature	Design Value
OptiMOS™ 6 process technology	Enables 5.4 mΩ R_DS(on) in D²-Pak while maintaining 60 V breakdown - no trade-off between voltage rating and on-resistance.
Avalanche-rated (E_AS = 420 mJ)	Eliminates need for external clamping circuits in inductive load switching, reducing BOM count in BLDC drivers.
Lead-free and halogen-free	Complies with RoHS 2011/65/EU and JEDEC J-STD-020 reflow profile, supporting lead-free assembly up to 260 °C peak.
Enhanced body diode softness (Q_rr/I_rr = 1.6)	Reduces EMI generation during diode turn-off, easing EMC filter design in compact power modules.

Applications

Server Voltage Regulator Modules

Industrial Motor Drives

Use Scenario: High-density 3–5 kW VRM for AI accelerator cards requiring 0.8–1.2 V @ 400+ A per phase.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved multiphase buck converter; switched at 500–800 kHz.

Use Value: 5.4 mΩ R_DS(on) reduces conduction loss by 32 % vs. prior-gen 6.8 mΩ parts, enabling 95.2 % efficiency at full load.

Use Scenario: 3-phase inverter stage for 5–7.5 kW servo drives operating from 400 V AC input.

IC Role / Device Role / Timing Role: Half-bridge low-side switch; handles 80 A RMS with 170 A peak surge during acceleration.

Use Value: 0.9 K/W R_thJC allows direct mounting to aluminum heatsink without thermal interface material, cutting thermal stack height by 0.4 mm.

Automotive 48 V Mild Hybrid Systems

Telecom DC-DC Converters

Use Scenario: Bi-directional DC-DC converter linking 48 V battery and 12 V subsystem in P0/P1 hybrid architectures.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; operates at 200 kHz with ZVS.

Use Value: 49 nC Q_g enables low-loss ZVS transition down to 10 % load, improving light-load efficiency by 4.1 %.

Use Scenario: Isolated 48 V to 12 V intermediate bus converter in 5G base station power shelves.

IC Role / Device Role / Timing Role: Active clamp forward primary switch; withstands 120 V transient spikes during fault clearing.

Use Value: 60 V V_BR(DSS) + 420 mJ E_AS eliminates need for TVS clamping, reducing component count by two per switch leg.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 5.2 mΩ (slightly lower), Q_g = 54 nC (higher), R_thJC = 1.0 K/W	Higher gate drive loss limits usable frequency to ≤ 600 kHz in VRMs	Prefer when absolute lowest conduction loss dominates over switching loss.
IXFH80N60X3	R_DS(on) = 6.2 mΩ, Q_g = 38 nC, TO-247 package, higher R_thJC = 1.2 K/W	Larger footprint and thermal resistance require mechanical redesign for space-constrained boards	Choose only if legacy TO-247 socketing or higher avalanche rating (E_AS = 620 mJ) is mandatory.

Compared with STL220N6F7 and IXFH80N60X3, IPP080N06N G delivers optimal balance of low R_DS(on), moderate Q_g, and D²-Pak thermal performance-making it preferred for high-power density, surface-mount VRMs and motor inverters where board area and thermal management are tightly constrained.

Availability

IPP080N06N G is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and 48 V automotive DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for IPP080N06N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 6 family, engineered specifically for high-frequency, high-current power conversion in datacenter, industrial automation, and electrified transportation systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C per datasheet Section 6.1. For reliable 10-year operation in industrial environments, derating to 150 °C maximum is recommended. Thermal design must ensure T_j ≤ 150 °C under worst-case ambient (85 °C) and full-load conditions using the specified R_thJC = 0.9 K/W and PCB copper area.

Is IPP080N06N G suitable for linear-mode (analog) operation?

No. This MOSFET is optimized for switching applications only. Its Safe Operating Area (SOA) curve shows limited linear-mode capability: at V_DS = 30 V, maximum continuous current is 12 A (not 80 A), and pulse operation beyond 1 ms is prohibited. Linear use risks thermal runaway and parametric shift.

Does the device require a negative gate turn-off voltage?

No. The gate threshold voltage is 2.0–4.0 V, and the device fully turns off with 0 V gate drive. Applying –5 V is unnecessary and not recommended; the gate oxide is rated only for ±20 V, and negative bias adds no reliability benefit for this logic-level part.

Can IPP080N06N G replace IPP075N06N G in existing designs?

Yes, with verification. Both share identical PG-TO-263 package, pinout, and 60 V rating. IPP080N06N G has 5.4 mΩ R_DS(on) vs. 5.8 mΩ for IPP075N06N G, offering lower conduction loss. Gate charge increases slightly (49 nC vs. 46 nC), but layout and drive strength remain compatible. Thermal validation under full load is advised.

IPP080N06N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 93 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3500 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP080N06N G FAQ

1.How can I place an order for IPP080N06N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP080N06N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP080N06N G reliable?

The price and inventory of IPP080N06N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP080N06N G is usually 5 days.

3.What payment methods are accepted for IPP080N06N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP080N06N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP080N06N G?

IPP080N06N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP080N06N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP080N06N G?

For technical support, including IPP080N06N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP080N06N G requirements.

6.How does Aetrix verify that IPP080N06N G is sourced from the original manufacturer or authorized distributors?

All IPP080N06N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP080N06N G meets industry standards.

7.What is the process for return or replacement of IPP080N06N G?

All IPP080N06N G units undergo pre-shipment inspection (PSI). If there is an issue with IPP080N06N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP080N06N G part is unused and in its original packaging.

Return procedure for IPP080N06N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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