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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP082N10NF2SAKMA1

Name: IPP082N10NF2SAKMA1
Brand: Infineon Technologies
SKU: IPP082N10NF2SAKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP082N10NF2SAKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP082N10NF2SAKMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP082N10NF2SAKMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-efficiency switching in DC-DC converters and motor drives. It delivers 100 V V_DS, 8.2 mΩ R_DS(on) max at V_GS = 10 V, 77 A continuous drain current at T_C = 25 °C, and is 100% avalanche tested for ruggedness in industrial power stages.

For engineers reviewing the IPP082N10NF2SAKMA1 datasheet, IPP082N10NF2SAKMA1 pinout, IPP082N10NF2SAKMA1 application, or IPP082N10NF2SAKMA1 equivalent, key selection criteria include its low Q_g (28 nC), low Q_oss (38 nC), strong body diode with 33 ns t_rr, and thermal resistance R_thJC of 1.5 °C/W - critical for thermally constrained high-current switch-mode designs.

Technical Context

This StrongIRFET™ 2 device uses trench-gate field-stop superjunction technology to achieve high voltage blocking (100 V) with ultra-low conduction loss. Its gate threshold voltage (2.2–3.8 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers, and its 1.5 °C/W junction-to-case thermal resistance supports direct heatsink mounting in high-power density applications.

The MOSFET integrates a fast, soft-recovery body diode (t_rr = 33 ns, Q_rr = 199 nC) suitable for synchronous rectification and freewheeling in hard-switched topologies. Its dynamic parameters - including C_iss = 2000 pF, C_oss = 320 pF, and Cr_ss = 15 pF - are optimized for reduced switching loss and EMI in 100 kHz–500 kHz power converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage; enables use in 48 V input systems with 2× safety margin.
R_DS(on), max	8.2 mΩ at V_GS = 10 V - Low conduction loss yields <0.32 W dissipation at 77 A DC, reducing heatsink requirements.
I_D, cont	77 A at T_C = 25 °C - Supports high-current output stages in server VRMs and BLDC motor inverters.
Q_g	28 nC - Enables fast, low-loss switching with moderate gate drive strength (e.g., 1–2 A peak).
Q_oss	38 nC - Low output charge minimizes turn-off energy and improves light-load efficiency in resonant converters.
t_rr	33 ns - Fast, soft reverse recovery reduces voltage overshoot and EMI during commutation.
R_thJC	1.5 °C/W - Allows direct thermal coupling to heatsinks; enables >80 W continuous power dissipation at ΔT = 120 °C.

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab). Drain connected to metal tab for low-inductance, high-current thermal path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires <28 nC charge for full enhancement; sensitive to ESD (±20 V rating).
Pin 2 (Drain)	High-side power node	Connected to metal tab; carries full load current and must be electrically isolated from heatsink unless using insulating pad.
Pin 3 (Source)	Reference node / return path	Serves as common reference for gate drive and current sensing; low-inductance layout essential for stable switching.

Key Features

Feature	Design Value
100% avalanche rated	Guarantees single-pulse avalanche energy of 47 mJ (E_AS) - eliminates need for external snubbers in inductive load switching.
StrongIRFET™ 2 technology	Combines trench-gate and field-stop superjunction for optimal R_DS(on) × Q_g figure-of-merit (FOM) of 230 mΩ·nC.
Pb-free, RoHS & halogen-free	Complies with IEC61249-2-21; suitable for automotive and industrial end-equipment requiring strict environmental compliance.
Optimized body diode	Soft reverse recovery (Q_rr = 199 nC, t_rr = 33 ns) enables efficient synchronous rectification without external Schottky.

Applications

Server VRM Power Stage

Industrial BLDC Motor Inverter

Use Scenario: High-current, high-frequency buck converter delivering 12 V/100+ A to CPU/GPU cores.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 300–500 kHz with tight duty-cycle control.

Use Value: 8.2 mΩ R_DS(on) and 28 nC Q_g reduce conduction + switching losses simultaneously, enabling >95% efficiency at full load.

Use Scenario: 3-phase inverter driving 1–3 kW permanent-magnet motors in CNC machines or pumps.

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack topology, handling 77 A peak phase current with forced-air cooling.

Use Value: 1.5 °C/W R_thJC and 47 mJ E_AS ensure robust operation under short-circuit and regenerative braking conditions.

Telecom 48 V DC-DC Converter

EV Onboard Charger Auxiliary Supply

Use Scenario: Isolated forward or LLC converter converting 48 V input to 12 V/24 V for base station subsystems.

IC Role / Device Role / Timing Role: Primary-side switch in asymmetrical half-bridge configuration, switching at 200–300 kHz.

Use Value: Low C_oss (320 pF) and Q_oss (38 nC) minimize dead-time losses and improve ZVS behavior across wide load range.

Use Scenario: Auxiliary 12 V supply derived from high-voltage battery (400–800 V) via flyback or resonant converter.

IC Role / Device Role / Timing Role: Primary-side power switch handling repetitive 100 V transient spikes during startup and fault events.

Use Value: 100% avalanche testing and 175 °C max junction temperature support long-term reliability in thermally demanding EV environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF10	R_DS(on) = 12 mΩ (higher), Q_g = 120 nC (much higher), TO-220FP package (lower P_tot).	Less suitable for high-frequency (>200 kHz) or high-current (>50 A) applications due to higher switching loss.	Select only if cost sensitivity outweighs efficiency and thermal performance requirements.
IXTH80N10L2	R_DS(on) = 9.5 mΩ, Q_g = 45 nC, higher V_GS(th) (3–5 V), TO-247 package.	Better thermal performance (R_thJC = 0.5 °C/W) but larger footprint and higher gate drive demand.	Prefer for ultra-high-power designs where board space allows TO-247 and gate drive can support 45 nC.

Compared with STP80NF10 and IXTH80N10L2, IPP082N10NF2SAKMA1 offers the best balance of low R_DS(on), low Q_g, and industry-standard TO220 footprint - making it ideal for space-constrained, high-efficiency 100 V power stages where thermal management is moderate.

Availability

IPP082N10NF2SAKMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC converters, and EV auxiliary supplies requiring stable component supply and long-lifecycle support.

Supply support for IPP082N10NF2SAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the StrongIRFET™ 2 family - engineered specifically for high-current, high-efficiency switching in industrial and computing power supplies, emphasizing ruggedness, low FOM, and ease of thermal integration.

FAQ

Is IPP082N10NF2SAKMA1 suitable for 5 V gate drive?

No - its gate threshold voltage range is 2.2–3.8 V, but full enhancement requires ≥6 V to achieve specified R_DS(on). At V_GS = 5 V, R_DS(on) rises to ~10.3 mΩ (max), increasing conduction loss by ~26%. Use 10 V gate drive for optimal performance.

What is the maximum safe operating temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, but continuous operation should be limited to ≤150 °C to ensure long-term reliability. Derating curves in the datasheet show ID drops to 49 A at T_C = 100 °C, confirming thermal design must maintain case temperature below 100 °C under full load.

Does the metal tab connect to drain internally?

Yes - Pin 2 and the exposed metal tab are electrically connected to the drain. This provides low-inductance, high-current conduction path but requires electrical isolation (e.g., mica pad + thermal grease) when mounted to a grounded heatsink.

Can this MOSFET replace IPP086N10N3 in existing designs?

Not directly - IPP086N10N3 has lower R_DS(on) (6.6 mΩ) and higher Q_g (42 nC), requiring stronger gate drive. While both are 100 V TO-220 devices, the different gate charge and on-resistance affect switching speed and thermal profile; layout and driver validation are required before substitution.

IPP082N10NF2SAKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta), 77A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 8.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 46µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP082N10NF2SAKMA1 FAQ

1.How can I place an order for IPP082N10NF2SAKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP082N10NF2SAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP082N10NF2SAKMA1 reliable?

The price and inventory of IPP082N10NF2SAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP082N10NF2SAKMA1 is usually 5 days.

3.What payment methods are accepted for IPP082N10NF2SAKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP082N10NF2SAKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP082N10NF2SAKMA1?

IPP082N10NF2SAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP082N10NF2SAKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP082N10NF2SAKMA1?

For technical support, including IPP082N10NF2SAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP082N10NF2SAKMA1 requirements.

6.How does Aetrix verify that IPP082N10NF2SAKMA1 is sourced from the original manufacturer or authorized distributors?

All IPP082N10NF2SAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP082N10NF2SAKMA1 meets industry standards.

7.What is the process for return or replacement of IPP082N10NF2SAKMA1?

All IPP082N10NF2SAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP082N10NF2SAKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP082N10NF2SAKMA1 part is unused and in its original packaging.

Return procedure for IPP082N10NF2SAKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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