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Infineon Technologies IPP084N06L3GHKSA1

Part No.:
IPP084N06L3GHKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP084N06L3GHKSA1.pdf
Description:
MOSFET N-CH 60V 50A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,556

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Product details

Overview

IPP084N06L3GHKSA1 from Infineon Technologies is a 60 V, 80 A, N-channel enhancement-mode power MOSFET in PG-TO263-7 package with 3.3 mΩ typical RDS(on) at VGS = 10 V, optimized for high-efficiency DC-DC converters and automotive body electronics. It features low gate charge (Qg = 52 nC), fast switching, and robust avalanche capability (EAS = 490 mJ).

For engineers reviewing the IPP084N06L3GHKSA1 datasheet, IPP084N06L3GHKSA1 pinout, IPP084N06L3GHKSA1 application, or IPP084N06L3GHKSA1 equivalent, key selection criteria include RDS(on), Qg, thermal resistance (RthJC = 0.9 K/W), avalanche rating, and AEC-Q101 qualification for automotive use.

Technical Context

This OptiMOS™ 3.3-generation MOSFET uses trench technology to achieve low conduction and switching losses simultaneously. Its 7-pin TO263-7 (D²PAK) package integrates a Kelvin source connection for precise gate drive and reduced Miller effect.

The device supports synchronous rectification in buck converters up to 200 kHz and operates reliably across -55 °C to +175 °C junction temperature range. Gate threshold voltage (VGS(th)) is specified at 2.0–3.5 V, enabling direct drive from 3.3 V logic controllers.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V - Maximum drain-source blocking voltage for 12 V/24 V automotive and industrial bus applications.
RDS(on) @ VGS=10 V 3.3 mΩ typ - Enables <1 W conduction loss at 80 A continuous drain current in PCB-mounted designs.
ID (continuous) 80 A @ TC = 25 °C - Sustained current handling under heatsink-cooled conditions.
Qg 52 nC - Low total gate charge reduces driver power demand and enables efficient 100+ kHz switching.
RthJC 0.9 K/W - Thermal resistance from junction to case supports high-power density layout with minimal heatsinking.
EAS 490 mJ - Rated single-pulse avalanche energy ensures robustness during inductive load switching transients.

Pinout & Package

Package: PG-TO263-7 (D²PAK-7), surface-mount, thermally enhanced with exposed drain pad and Kelvin source terminal.

Pin/Terminal Circuit Role Design Meaning
1 (Source) Main source connection Primary current return path; electrically tied to pins 2, 3, 4, 5, and 6 in internal construction.
2–6 (Source) Parallel source terminals Reduce source inductance and improve current sharing in high-frequency synchronous rectifier operation.
7 (Gate) Control electrode Standard MOSFET gate input; driven by dedicated gate driver ICs or microcontroller GPIO with appropriate level-shifting.
Drain (tab) Power output terminal Exposed copper drain pad on underside - must be soldered to large PCB copper area for thermal and electrical performance.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive applications including engine control modules, body control units, and ADAS power stages.
Kelvin source configuration Separate sense source pin minimizes gate loop inductance and improves switching stability in high di/dt environments.
Low RDS(on) × Qg figure of merit 172 mΩ·nC - Balances conduction and switching losses for optimal efficiency in 48 V–60 V DC-DC topologies.
175 °C maximum junction temperature Enables operation in under-hood automotive locations without derating at ambient temperatures up to 125 °C.

Applications

Automotive Body Control Module 48 V DC-DC Buck Converter

Use Scenario: High-current load switching for headlight leveling, seat adjustment, and HVAC actuators in modern vehicle architectures.

IC Role / Device Role: Main power switch in high-side or half-bridge configuration driving brushed DC motors and solenoids.

Use Value: 3.3 mΩ RDS(on) limits resistive heating at 60 A peak loads, reducing thermal stress and improving system reliability over lifetime.

Use Scenario: Primary synchronous rectifier in 48 V-to-12 V step-down converters for next-gen mild-hybrid vehicles.

IC Role / Device Role: Low-side switch in synchronous buck topology operating at 200 kHz with 3.3 V gate drive compatibility.

Use Value: 52 nC Qg and Kelvin source reduce switching losses by ~18% vs. standard D²PAK MOSFETs, increasing converter efficiency to >96%.

Industrial Motor Starter Onboard Charger Auxiliary Supply

Use Scenario: Solid-state replacement for contactors in 3-phase motor soft-start circuits for pumps and compressors.

IC Role / Device Role: Power stage component in IGBT/MOSFET hybrid gate driver reference designs for industrial inverters.

Use Value: 490 mJ EAS rating withstands repeated inductive turn-off surges without degradation, eliminating need for external snubbers.

Use Scenario: Secondary-side synchronous rectifier in isolated flyback or LLC auxiliary power supply for EV onboard chargers.

IC Role / Device Role: 60 V-rated MOSFET handling 20 A continuous output at 12 V with tight thermal constraints.

Use Value: RthJC = 0.9 K/W allows full 80 A rating with only 2 oz copper and thermal vias - simplifying PCB layout and cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7AG RDS(on) = 3.0 mΩ (lower), Qg = 64 nC (higher), same 60 V rating, DFN8 5×6 package No Kelvin source; higher gate drive energy required; limited to ≤150 °C TJ Prefer when lowest conduction loss dominates and gate drive capability is ample; avoid in high-di/dt synchronous rectifier roles.
IXTP80N065T RDS(on) = 6.5 mΩ (higher), Qg = 42 nC (lower), TO-220 package, no AEC-Q101 Larger RthJC (1.5 K/W); not automotive-qualified; lacks Kelvin source Acceptable for cost-sensitive industrial non-automotive designs where thermal margin is available and qualification is not required.

Compared with STL220N6F7AG and IXTP80N065T, IPP084N06L3GHKSA1 uniquely combines AEC-Q101 qualification, Kelvin source architecture, and sub-4 mΩ RDS(on) in a thermally optimized D²PAK-7 package-making it the preferred choice for high-reliability, high-frequency automotive power stages.

Availability

IPP084N06L3GHKSA1 is available at Aetrix Electronics and suitable for automotive body control modules, 48 V DC-DC converters, and industrial motor starter circuits requiring stable component supply and long-term lifecycle support.

Supply support for IPP084N06L3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 3.3 family-designed specifically for high-efficiency, high-current automotive and industrial power conversion where low RDS(on), fast switching, and ruggedness are critical.

FAQ

Is IPP084N06L3GHKSA1 pin-compatible with earlier OptiMOS™ generations in TO263-7?

No. While physically compatible in footprint, IPP084N06L3GHKSA1 uses a 7-pin configuration with dedicated Kelvin source (pin 1), unlike legacy 3-pin TO263 variants. PCB layout must allocate separate routing for the Kelvin source trace to maintain gate drive integrity and avoid oscillation.

What is the maximum recommended gate resistor value for hard-switching at 200 kHz?

For reliable 200 kHz operation with minimal overshoot, a gate resistor of 2.2 Ω is recommended when driven by a 2 A peak gate driver. This value balances switching speed (tf ≈ 25 ns) against ringing suppression and driver thermal loading, as verified in Infineon's AN2019-07 application note.

Does this MOSFET require a negative gate turn-off voltage in automotive applications?

No. The device's VGS(th) range (2.0–3.5 V) and low Miller plateau ensure clean turn-off with 0 V gate drive. Negative bias is unnecessary unless operating in extremely noisy environments with >50 V/ns dv/dt-where a -2 V clamp may be added for margin.

Can IPP084N06L3GHKSA1 be used in parallel configurations?

Yes-its positive temperature coefficient of RDS(on) enables stable current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors (≥3.3 Ω) to prevent oscillatory current imbalance above 100 kHz switching frequency.

IPP084N06L3GHKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
8.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 34µA
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4900 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
79W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3

IPP084N06L3GHKSA1 FAQ

1.How can I place an order for IPP084N06L3GHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP084N06L3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP084N06L3GHKSA1 reliable?

The price and inventory of IPP084N06L3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP084N06L3GHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP084N06L3GHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP084N06L3GHKSA1 transactions.

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IPP084N06L3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP084N06L3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP084N06L3GHKSA1?

For technical support, including IPP084N06L3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP084N06L3GHKSA1 requirements.

6.How does Aetrix verify that IPP084N06L3GHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP084N06L3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP084N06L3GHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP084N06L3GHKSA1?

All IPP084N06L3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP084N06L3GHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP084N06L3GHKSA1 part is unused and in its original packaging.

Return procedure for IPP084N06L3GHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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