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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP084N06L3GXKSA1

Name: IPP084N06L3GXKSA1
Brand: Infineon Technologies
SKU: IPP084N06L3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP084N06L3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP084N06L3GXKSA1.pdf

Description:: MOSFET N-CH 60V 50A TO220-3

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Product details

Overview

IPP084N06L3GXKSA1 from Infineon Technologies is a 60 V, 84 A, 3.7 mΩ N-channel enhancement-mode MOSFET in TO-220 package, optimized for high-efficiency DC-DC converters and motor control inverters with low gate charge (Q_g = 39 nC) and fast switching (t_on = 15 ns, t_off = 27 ns). It features avalanche-rated ruggedness and logic-level gate drive compatibility.

For engineers reviewing the IPP084N06L3GXKSA1 datasheet, IPP084N06L3GXKSA1 pinout, IPP084N06L3GXKSA1 application, or IPP084N06L3GXKSA1 equivalent, key selection criteria include R_DS(on) at 10 V, total gate charge, safe operating area (SOA) limits, thermal resistance (R_thJC = 0.65 K/W), and reverse diode recovery performance in hard-switching topologies.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, delivering low conduction loss via reduced specific on-resistance and minimized gate-drain charge (Q_gd = 12 nC) to improve hard-switching efficiency. Its vertical power trench structure supports high current density while maintaining robust short-circuit withstand capability (t_SC = 10 µs at T_j = 150 °C).

The device integrates a fast-recovery body diode with t_rr = 55 ns and Q_rr = 41 nC at I_F = 42 A, enabling use in synchronous rectification and freewheeling paths without external diode supplementation in medium-frequency SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; defines usable bus voltage range up to 48 V nominal systems with margin.
R_DS(on) @ V_GS = 10 V	3.7 mΩ - Conduction loss of ~1.3 W at 60 A continuous; enables compact heatsinking in 1–3 kW industrial inverters.
Q_g	39 nC - Total gate charge; determines driver power requirement and switching loss trade-off at 100–500 kHz operation.
I_D (continuous)	84 A @ T_C = 25 °C - Limited by bondwire current capacity; derates to 52 A at T_C = 100 °C per SOA curve.
R_thJC	0.65 K/W - Junction-to-case thermal resistance; allows ~60 W dissipation with 40 K case-to-heatsink ΔT.
t_rr / Q_rr	55 ns / 41 nC - Body diode reverse recovery time and charge; critical for EMI and shoot-through risk in half-bridge configurations.

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free plating, RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab; requires insulated mounting when referenced to non-ground potentials.
Source	Reference node for gate drive and current sensing	Low-inductance connection point for shunt resistor placement and gate driver return path.
Gate	Control input for channel modulation	High-impedance MOS gate; requires <10 Ω series resistance to suppress ringing during fast edge transitions.

Key Features

Feature	Design Value
OptiMOS™ 3 trench technology	Enables 3.7 mΩ R_DS(on) at 60 V while maintaining >1000 V_BR(DSS) surge immunity per JEDEC JESD22-A115.
Avalanche-rated (E_AS)	Rated for 250 mJ single-pulse avalanche energy at T_j = 25 °C; supports unclamped inductive switching in motor drives.
Logic-level gate threshold	V_GS(th) = 2.0–3.0 V (typ. 2.4 V); ensures full enhancement with 3.3 V or 5 V microcontroller GPIO without level-shifting.
Lead-free and RoHS-compliant	Meets EU Directive 2011/65/EU; Pb-free matte tin plating on leads and tab; compatible with standard SnPb and lead-free reflow profiles.

Applications

Motor Drive Inverter

Server PSU Primary Switch

Use Scenario: 3-phase BLDC inverter stage in HVAC compressors operating at 20–40 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side and low-side main switching element; handles 40 A RMS phase current with <1.5 V_DS saturation under load.

Use Value: Low R_DS(on) reduces conduction loss by 22% vs. legacy 5.2 mΩ devices, improving system efficiency from 95.1% to 95.8% at full load.

Use Scenario: Primary-side synchronous rectifier in 1.5 kW telecom-grade LLC resonant converter.

IC Role / Device Role / Timing Role: Secondary-side active switch replacing Schottky diodes; commutated at 300–600 kHz with zero-voltage switching.

Use Value: Q_rr = 41 nC minimizes reverse recovery loss, reducing diode conduction loss by 3.8 W per phase versus 65 nC competitor parts.

Solar Microinverter DC-Link

Industrial UPS Output Stage

Use Scenario: DC-link switching in 300–600 V string-connected microinverters with bidirectional energy flow.

IC Role / Device Role / Timing Role: Bidirectional power switch in H-bridge topology; rated for repetitive unclamped inductive switching.

Use Value: Avalanche energy rating (E_AS = 250 mJ) eliminates need for external snubbers during grid fault transients.

Use Scenario: Output H-bridge stage in 5 kVA three-phase online UPS with 10 ms transfer time requirement.

IC Role / Device Role / Timing Role: Final power stage switch handling 120 A peak line current; operated in 16 kHz PWM mode with dead-time control.

Use Value: R_thJC = 0.65 K/W enables stable 110 °C junction temperature with forced-air cooling, meeting 15-year field reliability target.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB081N06L3G	R_DS(on) = 4.1 mΩ (higher), Q_g = 37 nC (slightly lower), same package and V_DS.	Marginally higher conduction loss; preferred where gate drive strength is limited and thermal headroom exists.	Select when cost sensitivity outweighs 0.4 mΩ R_DS(on) penalty and SOA margin is sufficient.
STP80NF55-08	R_DS(on) = 8.0 mΩ, Q_g = 120 nC, TO-220FP package (non-isolated tab), no avalanche rating.	Higher switching and conduction losses; unsuitable for avalanche-prone motor control or high-frequency SMPS.	Only consider for low-frequency (<50 kHz), low-cost replacement where ruggedness and efficiency are secondary.

Compared with IPB081N06L3G, IPP084N06L3GXKSA1 delivers lower conduction loss and better thermal performance, while STP80NF55-08 lacks avalanche rating and exhibits significantly higher losses-making it viable only in non-rugged, low-frequency applications where cost dominates.

Availability

IPP084N06L3GXKSA1 is available at Aetrix Electronics and suitable for motor drive inverters, server power supplies, solar microinverters, and industrial UPS systems requiring stable component supply and long-term manufacturability.

Supply support for IPP084N06L3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™ 3 discrete power MOSFET product line, engineered for high-efficiency switching in industrial motor drives, renewable energy converters, and enterprise power systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C per datasheet limit. For reliable long-term operation, Infineon recommends limiting T_j to ≤150 °C under continuous DC or PWM conditions. Derating curves in Figure 1 confirm 52 A maximum current at T_C = 100 °C, corresponding to ~145 °C T_j with typical thermal interface resistance.

Is the TO-220 tab electrically isolated from the drain?

Yes-the PG-TO220-3 package used for IPP084N06L3GXKSA1 features an electrically isolated metal tab internally connected to the drain. This isolation allows direct mechanical mounting to a heatsink without additional insulating hardware, provided the heatsink remains at drain potential or is properly isolated.

Does this MOSFET require a negative gate turn-off voltage?

No-this device operates reliably with 0 V to +10 V gate drive. While −5 V turn-off improves noise immunity in high-dV/dt environments, the specified V_GS(th) range (2.0–3.0 V) and gate threshold stability ensure clean turn-off at 0 V. Negative bias is optional, not required.

How does its body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 1.3 V at 42 A and t_rr = 55 ns, outperforming standard silicon diodes but not matching ultra-fast Schottky V_F < 0.5 V. It is suitable for synchronous rectification up to ~300 kHz, but discrete SiC Schottky diodes remain superior above 400 kHz due to near-zero Q_rr.

IPP084N06L3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 34µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4900 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP084N06L3GXKSA1 FAQ

1.How can I place an order for IPP084N06L3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP084N06L3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP084N06L3GXKSA1 reliable?

The price and inventory of IPP084N06L3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP084N06L3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP084N06L3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP084N06L3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP084N06L3GXKSA1?

IPP084N06L3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP084N06L3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP084N06L3GXKSA1?

For technical support, including IPP084N06L3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP084N06L3GXKSA1 requirements.

6.How does Aetrix verify that IPP084N06L3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP084N06L3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP084N06L3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP084N06L3GXKSA1?

All IPP084N06L3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP084N06L3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP084N06L3GXKSA1 part is unused and in its original packaging.

Return procedure for IPP084N06L3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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