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Infineon Technologies IPP086N10N3GHKSA1
- Part No.:
- IPP086N10N3GHKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IPP086N10N3GHKSA1.pdf
- Description:
- MOSFET N-CH 100V 80A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:9,778
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Product details
Overview
IPP086N10N3GHKSA1 from Infineon Technologies is a 100 V, 86 A, N-channel enhancement-mode power MOSFET in TO-220FP package with RDS(on) = 8.6 mΩ (typ.) at VGS = 10 V, optimized for high-efficiency DC-DC converters and motor drive half-bridges in industrial and automotive power stages.
For engineers reviewing the IPP086N10N3GHKSA1 datasheet, IPP086N10N3GHKSA1 pinout, IPP086N10N3GHKSA1 application, or IPP086N10N3GHKSA1 equivalent, key selection criteria include its 100 V VDSS, low gate charge (Qg = 54 nC), avalanche-rated ruggedness, and TO-220FP's isolated tab enabling direct heatsink mounting without insulator.
Technical Context
This OptiMOS™ 3rd generation device uses trench-gate silicon technology to achieve low conduction loss while maintaining fast switching speed (ton = 27 ns, toff = 42 ns) and tight threshold voltage distribution (VGS(th) = 2.0–4.0 V). Its integrated body diode exhibits soft recovery with Qrr = 190 nC, reducing EMI in hard-switched topologies.
The MOSFET supports continuous drain current up to 86 A at Tc = 25 °C and 52 A at Tc = 100 °C, with thermal resistance RthJC = 1.2 K/W. It is qualified per AEC-Q101 and rated for repetitive avalanche energy EAS = 450 mJ, enabling robust operation in inductive load switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Supports 48 V bus systems with 2× safety margin against transients. |
| RDS(on) max @ VGS = 10 V | 9.5 mΩ - Enables <1.5 W conduction loss at 40 A, critical for thermally constrained PCBs. |
| Qg | 54 nC - Reduces gate driver power demand and switching losses in 100–500 kHz SMPS designs. |
| EAS | 450 mJ - Allows reliable operation under unclamped inductive switching without external snubbers. |
| Qrr | 190 nC - Limits reverse recovery current overshoot and associated voltage spikes in bridge legs. |
| RthJC | 1.2 K/W - Permits 52 W dissipation with 60 K heatsink rise, supporting compact thermal design. |
Pinout & Package
Delivered in TO-220FP (Full-Pak) package with electrically isolated metal tab (no internal connection to Drain), enabling direct mechanical mounting to heatsink without insulating washer. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (left) | Gate | High-impedance control terminal requiring ≤54 nC charge for full enhancement; sensitive to ESD. |
| Pin 2 (center, tab) | Drain | High-current output node tied directly to isolated metal tab; must be thermally coupled to heatsink. |
| Pin 3 (right) | Source | Reference node for gate drive and current sensing; connects to power ground or low-side shunt. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated (RAS) | Guarantees 450 mJ single-pulse energy handling without failure-enables simplified protection in motor drives. |
| Low Qg/RDS(on) ratio | 5.4 nC/mΩ - Balances switching speed and conduction loss for optimal FOM in 100–300 kHz converters. |
| Soft-recovery body diode | Qrr = 190 nC with low dI/dt - Reduces voltage ringing and EMI during commutation in half-bridge configurations. |
| AEC-Q101 qualified | Validated for automotive powertrain and chassis applications including EPS and HVAC blowers. |
Applications
| Industrial DC-DC Converters | Automotive HVAC Blower Drives |
|---|---|
|
Use Scenario: 48 V input, 12 V output synchronous buck converter in factory automation PLC power supplies. IC Role / Device Role / Timing Role: High-side power switch operating at 250 kHz with 50% duty cycle; handles peak currents up to 80 A. Use Value: 8.6 mΩ RDS(on) limits conduction loss to 0.55 W at 40 A, enabling >96% efficiency without forced air cooling. |
Use Scenario: Half-bridge motor driver controlling 300 W centrifugal blower in vehicle cabin climate system. IC Role / Device Role / Timing Role: Low-side switch in PWM-controlled H-bridge; switches at 16 kHz with 0–100% duty cycle modulation. Use Value: Avalanche rating absorbs inductive kickback during PWM turn-off, eliminating need for external freewheeling diodes. |
| Solar Microinverter DC Link | Server VRM High-Side Switch |
|
Use Scenario: DC link switch in 300 W string-level solar microinverter interfacing PV panel to H-bridge inverter stage. IC Role / Device Role / Timing Role: Unidirectional blocking switch handling bidirectional current during MPPT cycling; rated for 100 V DC bus. Use Value: 100 V VDSS provides 2.5× margin over 40 V PV open-circuit voltage, ensuring long-term reliability under surge conditions. |
Use Scenario: High-side switch in 48 V-to-1 V server VRM delivering up to 60 A to CPU core rail. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter; driven by dedicated gate controller with 54 nC Qg demand. Use Value: Low Qg enables fast turn-on/turn-off (<30 ns), minimizing dead-time losses and improving phase current balance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP86NF10 | RDS(on) = 11.5 mΩ (max), Qg = 65 nC, no AEC-Q101 qualification | Lacks automotive qualification and has higher conduction + switching loss | Acceptable for cost-sensitive industrial SMPS where qualification and efficiency are secondary. |
| IRF540NPBF | RDS(on) = 44 mΩ (max), VDSS = 100 V, Qg = 71 nC, legacy planar process | 3.5× higher RDS(on) increases conduction loss by >2.5× at 40 A | Only suitable for low-frequency (<50 kHz), low-current (<15 A) linear or quasi-resonant applications. |
Compared with STP86NF10 and IRF540NPBF, IPP086N10N3GHKSA1 delivers superior efficiency via lower RDS(on) and Qg, plus automotive-grade reliability-making it optimal for high-power-density, thermally constrained, or safety-critical designs.
Availability
IPP086N10N3GHKSA1 is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive HVAC blower drives, and solar microinverter DC link circuits requiring stable component supply and long-lifecycle support.
Supply support for IPP086N10N3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.
This device belongs to the OptiMOS™ 3rd generation N-channel power MOSFET product line, engineered specifically for high-efficiency, high-current switching in automotive and industrial power conversion systems.
FAQ
What is the maximum junction temperature for continuous operation?
The absolute maximum junction temperature is 175 °C. For continuous operation, derating is required above Tc = 25 °C: at Tc = 100 °C, the maximum continuous drain current drops to 52 A. Thermal design must maintain Tj ≤ 150 °C for 10-year reliability in automotive applications.
Is a gate resistor required, and what value is recommended?
Yes-a series gate resistor is mandatory to control dV/dt and prevent oscillation. For 250 kHz switching with a 1 A peak gate driver, a 10 Ω resistor limits peak current to ~1 A while damping ringing. Lower values (5–8 Ω) may be used with stronger drivers to reduce switching time.
Does this MOSFET require a negative gate voltage for safe turn-off?
No. The device fully turns off at VGS = 0 V due to its enhancement-mode structure. However, applying –5 V improves noise immunity in noisy environments and accelerates turn-off by actively discharging gate capacitance-especially beneficial in half-bridge layouts with high dv/dt coupling.
Can IPP086N10N3GHKSA1 replace IPP055N10N3 G in the same footprint?
No. Although both are TO-220FP devices, IPP055N10N3 has lower RDS(on) (5.5 mΩ) and higher Qg (72 nC), resulting in different gate drive requirements and thermal behavior. Direct replacement requires revalidation of gate drive strength, layout parasitics, and thermal margin-especially under avalanche conditions.
IPP086N10N3GHKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.6mOhm @ 73A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 75µA
- Gate Charge (Qg) (Max) @ Vgs:
- 55 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3980 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3
IPP086N10N3GHKSA1 FAQ
1.How can I place an order for IPP086N10N3GHKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPP086N10N3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPP086N10N3GHKSA1 reliable?
The price and inventory of IPP086N10N3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP086N10N3GHKSA1 is usually 5 days.
3.What payment methods are accepted for IPP086N10N3GHKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP086N10N3GHKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPP086N10N3GHKSA1?
IPP086N10N3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPP086N10N3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPP086N10N3GHKSA1?
For technical support, including IPP086N10N3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP086N10N3GHKSA1 requirements.
6.How does Aetrix verify that IPP086N10N3GHKSA1 is sourced from the original manufacturer or authorized distributors?
All IPP086N10N3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP086N10N3GHKSA1 meets industry standards.
7.What is the process for return or replacement of IPP086N10N3GHKSA1?
All IPP086N10N3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP086N10N3GHKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPP086N10N3GHKSA1 part is unused and in its original packaging.
Return procedure for IPP086N10N3GHKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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