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Infineon Technologies IPP086N10N3GXKSA1
- Part No.:
- IPP086N10N3GXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IPP086N10N3GXKSA1.pdf
- Description:
- MOSFET N-CH 100V 80A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,855
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Product details
Overview
IPP086N10N3GXKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO220-3 package, rated for 100 V VDS, 80 A continuous drain current at TC = 25 °C, and 7.4–8.6 mΩ RDS(on) at VGS = 10 V / ID = 73 A. It operates up to 175 °C junction temperature and is optimized for high-frequency switching in DC-DC converters and synchronous rectification in server PSUs.
For engineers reviewing the IPP086N10N3GXKSA1 datasheet, IPP086N10N3GXKSA1 pinout, IPP086N10N3GXKSA1 application, or IPP086N10N3GXKSA1 equivalent, key selection criteria include its gate charge × RDS(on) figure-of-merit (FOM), low 42–55 nC total gate charge, 1.2 K/W RthJC, and robust 110 mJ single-pulse avalanche energy - all critical for efficiency and thermal design in high-density power stages.
Technical Context
This MOSFET employs trench-gate OptiMOS™3 technology with a planar silicon die structure enabling low conduction and switching losses. Its gate threshold voltage (2.0–3.5 V) ensures reliable turn-on with standard 10 V gate drivers, while the 4.9 V gate plateau voltage supports stable Miller region control during hard-switching transitions.
Dynamic parameters are characterized at VDD = 50 V, ID = 73 A, and RG,ext = 1.6 Ω, yielding 18 ns turn-on delay, 42 ns rise time, 31 ns turn-off delay, and 8 ns fall time - confirming suitability for >500 kHz operation in resonant and synchronous buck topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 100 V - supports 48 V input bus designs with 2× safety margin against transients |
| RDS(on) max | 8.6 mΩ @ VGS = 10 V, ID = 73 A - enables <1.5 W conduction loss at 80 A in TO-220 package |
| Qg total | 42–55 nC - determines gate drive power and switching speed in high-frequency PWM stages |
| EAS | 110 mJ (ID = 73 A, RGS = 25 Ω) - provides margin against inductive switching stress without external snubbers |
| RthJC | 1.2 K/W - allows direct heatsink mounting for thermal management in industrial power supplies |
| Tj max | 175 °C - enables operation in sealed enclosures or high-ambient environments like telecom rectifiers |
| Ciss | 2990–3980 pF - impacts gate driver sizing and EMI filter design in hard-switched converters |
Pinout & Package
IPP086N10N3GXKSA1 uses the PG-TO220-3 package: insulated plastic case with copper tab (Drain), three leads (G, S, D), and screw-mount compatible outline per Infineon Rev. 2.6 (2013). The tab is electrically connected to Drain and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (left) | Gate (G) | High-impedance control terminal; requires low-inductance gate loop to minimize ringing during fast switching |
| Lead 2 (center) | Source (S) | Reference node for gate drive; connects to power ground plane to reduce common-source inductance |
| Tab (back) | Drain (D) | Main power terminal and thermal interface; must be mounted to heatsink with thermal compound and mechanical torque control |
Key Features
| Feature | Design Value |
|---|---|
| N-channel normal-level logic | Turns on fully with standard 10 V gate drive - eliminates need for level-shifting in half-bridge high-side configurations |
| Optimized FOM (Qg × RDS(on)) | ~360–470 pC·Ω - balances switching loss vs. conduction loss for 300–1000 kHz DC-DC operation |
| Robust avalanche capability | 110 mJ single-pulse rating - withstands unclamped inductive switching in motor drives and UPS systems |
| Pb-free & halogen-free | RoHS-compliant plating and IEC 61249-2-21 compliance - meets environmental requirements for industrial and telecom equipment |
| JEDEC-qualified reliability | Qualified per J-STD-20 and JESD22 - validated for long-term operation in high-temperature power conversion applications |
Applications
| Server PSU Synchronous Rectification | Industrial DC-DC Converter |
|---|---|
Use Scenario: Secondary-side rectification in 48 V–12 V isolated buck-derived converters for AI accelerators. IC Role / Device Role / Timing Role: Power MOSFET replacing Schottky diode to reduce forward conduction loss and improve efficiency above 20 A load. Use Value: Achieves >95% efficiency at full load by cutting conduction loss by 65% versus 100 V Schottky, enabled by 8.6 mΩ RDS(on) and low Qgd. | Use Scenario: High-current step-down regulation in programmable logic controller (PLC) power modules. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology operating at 500 kHz with 60 A output. Use Value: Enables compact thermal design via 1.2 K/W RthJC and stable gate drive with 4.9 V plateau voltage, reducing gate oscillation risk. |
| Telecom Rectifier Module | Motor Drive Half-Bridge |
Use Scenario: Primary-side switching in 3 kW telecom rectifiers with active PFC + LLC stages. IC Role / Device Role / Timing Role: High-frequency switching device in LLC resonant converter secondary synchronous rectifier stage. Use Value: Supports 175 °C operation and delivers 110 mJ avalanche energy margin - critical for field-reliability in unattended base station deployments. | Use Scenario: Low-side switch in 3-phase inverter for HVAC compressor drives (2–5 kW). IC Role / Device Role / Timing Role: Fast-turning, low-RDS(on) switch handling 80 A peak phase current with minimal shoot-through risk. Use Value: Low 8.9–15.4 mΩ RDS(on) at VGS = 6 V enables gate drive from microcontroller GPIO - simplifying isolated gate driver design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB083N10N3 G | RDS(on) max = 8.3 mΩ (TO-263), lower RthJA due to D²PAK thermal pad | Better PCB thermal dissipation; requires surface-mount assembly instead of through-hole | Select when board space permits SMT layout and thermal performance outweighs mechanical mounting constraints |
| IPD082N10N3 G | RDS(on) max = 8.2 mΩ (TO-252), higher RthJC = 1.4 K/W, smaller footprint | Lower profile and weight; limited to ≤60 A continuous due to thermal resistance | Select for space-constrained consumer power adapters where 80 A rating is not required |
Compared with IPB083N10N3 G and IPD082N10N3 G, IPP086N10N3GXKSA1 offers optimal trade-off between through-hole mechanical robustness, 1.2 K/W thermal resistance, and 80 A current rating - making it preferred for serviceable, high-reliability industrial power supplies.
Availability
IPP086N10N3GXKSA1 is available at Aetrix Electronics and suitable for server PSUs, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.
Supply support for IPP086N10N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
This part belongs to the OptiMOS™3 power transistor product line, designed specifically for high-efficiency, high-frequency switching applications in data center, industrial, and telecom power systems.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The maximum continuous drain current for IPP086N10N3GXKSA1 is 58 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 package under real-world heatsink conditions and must be verified against actual board layout and airflow.
Does this MOSFET require a negative gate voltage for safe turn-off?
No. IPP086N10N3GXKSA1 has a gate threshold voltage range of 2.0–3.5 V and is fully enhanced at VGS = 0 V. Turn-off is achieved with 0 V gate drive; applying negative voltage is unnecessary and not recommended per datasheet guidelines.
Can it be used in avalanche mode for circuit protection?
Yes - it is rated for 110 mJ single-pulse avalanche energy (ID = 73 A, RGS = 25 Ω). However, repetitive avalanche operation is not guaranteed and must be validated per application stress conditions using the Safe Operating Area (SOA) curves on page 4 of the datasheet.
Is the PG-TO220-3 package lead-free and RoHS compliant?
Yes. IPP086N10N3GXKSA1 features Pb-free lead plating and complies with RoHS Directive 2011/65/EU and halogen-free requirements per IEC 61249-2-21, confirmed in the "Features" section of the official Infineon datasheet Rev. 2.6.
IPP086N10N3GXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.6mOhm @ 73A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 75µA
- Gate Charge (Qg) (Max) @ Vgs:
- 55 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3980 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3
IPP086N10N3GXKSA1 FAQ
1.How can I place an order for IPP086N10N3GXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPP086N10N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPP086N10N3GXKSA1 reliable?
The price and inventory of IPP086N10N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP086N10N3GXKSA1 is usually 5 days.
3.What payment methods are accepted for IPP086N10N3GXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP086N10N3GXKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPP086N10N3GXKSA1?
IPP086N10N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPP086N10N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPP086N10N3GXKSA1?
For technical support, including IPP086N10N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP086N10N3GXKSA1 requirements.
6.How does Aetrix verify that IPP086N10N3GXKSA1 is sourced from the original manufacturer or authorized distributors?
All IPP086N10N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP086N10N3GXKSA1 meets industry standards.
7.What is the process for return or replacement of IPP086N10N3GXKSA1?
All IPP086N10N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP086N10N3GXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPP086N10N3GXKSA1 part is unused and in its original packaging.
Return procedure for IPP086N10N3GXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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