Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP08CN10L G

Name: IPP08CN10L G
Brand: Infineon Technologies
SKU: IPP08CN10L G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPP08CN10L G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP08CN10L G.pdf

Description:: MOSFET N-CH 100V 98A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,058

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPP08CN10L G from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO220-3 package, rated for 100 V V_DS, 8 mΩ R_DS(on) at V_GS = 10 V, 98 A continuous drain current, and 175 °C junction operation-designed for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the IPP08CN10L G datasheet, IPP08CN10L G pinout, IPP08CN10L G application, or IPP08CN10L G equivalent, key selection criteria include gate charge (Q_g = 90 nC), reverse recovery charge (Q_rr = 283 nC), thermal resistance (R_thJC = 0.9 K/W), and logic-level drive compatibility (V_GS(th) typ. 1.85 V).

Technical Context

This OptiMOS®2 device uses a trench-gate silicon process optimized for low R_DS(on) × Q_g figure-of-merit (FOM), enabling efficient switching in hard-switched and synchronous rectifier topologies. Its 175 °C rated junction supports high ambient industrial environments without derating penalties.

The integrated body diode exhibits fast reverse recovery (t_rr = 95.4 ns) and low forward voltage (V_SD = 1.0–1.2 V at 98 A), critical for minimizing conduction and switching losses in buck and LLC secondary-side designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - maximum blocking voltage for 48 V input bus and 12 V output DC-DC stages
R_DS(on) max	8 mΩ at V_GS = 10 V - enables <1 W conduction loss at 98 A, reducing heatsink requirements
Q_g	90 nC - determines gate driver power and switching speed in 100–500 kHz applications
t_rr	95.4 ns - limits diode-induced shoot-through risk during synchronous FET commutation
R_thJC	0.9 K/W - allows direct mounting to heatsink with predictable thermal margin up to 167 W P_tot
Q_rr	283 nC - quantifies stored charge affecting EMI and voltage overshoot in flyback/LLC secondaries
I_D cont.	98 A at T_C = 25 °C - defines PCB copper area and thermal interface design for continuous load handling

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free plating per RoHS). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Logic-level compatible (V_GS(th) typ. 1.85 V); requires ≤10 V drive for full enhancement
Pin 2 (Drain)	High-side switch node / heat sink interface	Electrically connected to metal tab; must be isolated from chassis unless referenced to system ground
Pin 3 (Source)	Reference node for gate drive and current sensing	Serves as return path for load current and gate loop; layout critical for EMI control

Key Features

Feature	Design Value
N-channel logic-level gate	Operates fully enhanced at 4.5 V V_GS, eliminating need for gate boosters in 5 V control systems
Low R_DS(on) × Q_g FOM	Optimized for high-efficiency, high-frequency SMPS where both conduction and switching losses dominate
175 °C rated junction	Enables operation in sealed enclosures or high-ambient industrial settings without forced air cooling
Fast body diode (t_rr = 95.4 ns)	Reduces dead-time sensitivity and improves light-load efficiency in synchronous rectification
JEDEC-qualified reliability	Validated per J-STD-20/JESD22 for automotive-grade robustness in power supply modules

Applications

Server VRM

Industrial DC-DC Converter

Use Scenario: Point-of-load regulation for CPU/GPU core voltage in 1U rack servers.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converter, switching at 300–600 kHz.

Use Value: 8 mΩ R_DS(on) and 90 nC Q_g reduce total power loss by >15% vs. legacy MOSFETs at 98 A peak phase current.

Use Scenario: Isolated 48 V-to-12 V telecom power module for base station equipment.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward topology.

Use Value: 95.4 ns t_rr and 283 nC Q_rr suppress voltage spikes during ZVS transitions, improving reliability under 100% load.

Motor Drive Inverter

LED Driver Power Stage

Use Scenario: Half-bridge leg in 3 kW servo drive operating at 10–20 kHz PWM.

IC Role / Device Role / Timing Role: High-side switching element with integrated freewheeling diode conduction during dead time.

Use Value: 1.0–1.2 V V_SD minimizes conduction loss during diode conduction, improving thermal stability at 70 A RMS.

Use Scenario: Constant-current buck controller for high-bay LED luminaires (100–200 W).

IC Role / Device Role / Timing Role: Primary-side switch in non-isolated buck regulator, driven by 5 V microcontroller PWM.

Use Value: Logic-level gate enables direct MCU drive without level-shifting, reducing BOM count and layout complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3205PBF	R_DS(on) = 8.0 mΩ @ 10 V but Q_g = 71 nC; no JEDEC qualification; 175 °C rating not specified	Limited to commercial-temp industrial supplies; lacks validated reliability for long-life deployments	Lower gate charge reduces driver stress but lacks thermal and qualification assurance of IPP08CN10L G
STP80NF55-08	R_DS(on) = 8.0 mΩ @ 10 V; Q_g = 120 nC; 150 °C max T_j; TO-220FP package (non-isolated tab)	Requires insulating pad for heatsink mounting; higher Q_g increases switching loss above 200 kHz	Better cost-performance for lower-frequency (<100 kHz) applications where thermal margin is less constrained

Compared with IRF3205PBF and STP80NF55-08, IPP08CN10L G delivers superior thermal robustness (175 °C), JEDEC qualification, and balanced FOM for high-frequency synchronous rectification-making it optimal for mission-critical 300+ kHz DC-DC designs requiring lifetime reliability.

Availability

IPP08CN10L G is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and motor drive inverters requiring stable component supply, long-lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for IPP08CN10L G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOS®2 power transistor family, engineered specifically for high-efficiency, high-frequency switching in server, telecom, and industrial power conversion systems.

FAQ

Is IPP08CN10L G suitable for 5 V gate drive?

Yes. With a typical gate threshold voltage of 1.85 V and guaranteed enhancement down to 4.5 V V_GS, IPP08CN10L G achieves full conduction using standard 5 V logic outputs-no gate driver IC required in low-speed or medium-frequency applications.

What is the maximum safe operating area (SOA) at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is derated to 70 A per datasheet Figure 2. The SOA curve (Figure 3) confirms single-pulse capability up to 392 A for 10 μs at V_DS = 50 V, with linear derating between DC and pulse limits.

Does the body diode support continuous conduction mode (CCM) in synchronous rectifiers?

Yes. The device supports 98 A continuous forward current (I_S) and 392 A pulsed current (I_S,pulse) in its body diode, with V_SD = 1.0–1.2 V at 98 A and 25 °C-enabling reliable CCM operation when used as a synchronous rectifier in buck or forward converters.

How does thermal resistance change with PCB copper area?

R_thJA is specified as 62 K/W for minimal footprint and 40 K/W with 6 cm² copper area on FR4. Increasing copper area beyond 6 cm² yields diminishing returns; optimal thermal performance requires soldering the drain tab directly to ≥6 cm² of 70 μm thick copper with vertical orientation in still air.

IPP08CN10L G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 98A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 98A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8610 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP08CN10L G FAQ

1.How can I place an order for IPP08CN10L G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP08CN10L G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP08CN10L G reliable?

The price and inventory of IPP08CN10L G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP08CN10L G is usually 5 days.

3.What payment methods are accepted for IPP08CN10L G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP08CN10L G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP08CN10L G?

IPP08CN10L G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP08CN10L G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP08CN10L G?

For technical support, including IPP08CN10L G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP08CN10L G requirements.

6.How does Aetrix verify that IPP08CN10L G is sourced from the original manufacturer or authorized distributors?

All IPP08CN10L G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP08CN10L G meets industry standards.

7.What is the process for return or replacement of IPP08CN10L G?

All IPP08CN10L G units undergo pre-shipment inspection (PSI). If there is an issue with IPP08CN10L G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP08CN10L G part is unused and in its original packaging.

Return procedure for IPP08CN10L G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…