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Infineon Technologies IPP08CNE8NG
- Part No.:
- IPP08CNE8NG
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IPP08CNE8NG.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:425
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Product details
Overview
IPP08CNE8NG from Infineon Technologies is a 80 V, 80 A, 5.4 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.
For engineers reviewing the IPP08CNE8NG datasheet, IPP08CNE8NG pinout, IPP08CNE8NG application, or IPP08CNE8NG equivalent, key selection criteria include RDS(on) at 10 V gate drive, Qg of 75 nC, tr/tf under 20 ns, and avalanche-rated operation up to 100 mJ single-pulse energy.
Technical Context
This device uses Infineon's OptiMOS™ 5 technology with trench-gate superjunction architecture, delivering low conduction loss (RDS(on) = 5.4 mΩ @ Tj = 25°C) and fast switching (Qgd/Qg = 0.37). It supports 100% unclamped inductive switching (UIS) with EAS = 100 mJ at Tj = 25°C.
Thermal design leverages a copper clip-bonded TO-220 package with 0.5 K/W junction-to-case thermal resistance and minimal footprint cooling area. Gate threshold voltage is tightly distributed (VGS(th) = 2.0–3.0 V), enabling robust TTL/CMOS-level drive compatibility.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum drain-source blocking voltage for 48 V input bus applications |
| ID (cont) | 80 A - Continuous drain current at TC = 25°C, derates to 52 A at 100°C case temperature |
| RDS(on) | 5.4 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 50 A in 12 V output stages |
| Qg | 75 nC @ VGS = 10 V - Supports efficient 500 kHz–1 MHz switching with moderate gate driver strength |
| EAS | 100 mJ - Rated single-pulse avalanche energy ensures reliability during transient overloads |
| tr/tf | 12 ns / 14 ns - Fast switching minimizes overlap loss in hard-switched synchronous buck converters |
| Thermal RthJC | 0.5 K/W - Enables >100 W power dissipation with standard heatsink mounting |
Pinout & Package
PG-TO220-3 package with isolated tab (drain-connected), standard through-hole mounting, and 2.54 mm lead pitch. Thermal pad on backside requires mechanical clamping and thermal interface material for optimal heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Power return path for load current | Low-inductance source connection; ties directly to PCB ground plane for EMI control |
| Pin 2 (Gate) | Control terminal for channel modulation | High-impedance input requiring <100 Ω series gate resistor to damp ringing |
| Pin 3 (Drain) | Main power output node (tab-connected) | Internally bonded to metal tab; must be electrically isolated from heatsink unless referenced to system ground |
Key Features
| Feature | Design Value |
|---|---|
| OptiMOS™ 5 trench-gate process | Reduces RDS(on) × Qg figure-of-merit by 35% vs. prior generation for same voltage class |
| 100% UIS rated | Guarantees safe operation under worst-case inductive turn-off without external snubbers |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-609A Class 1 halogen-free requirements for industrial and telecom use |
| Enhanced body diode recovery | Qrr = 120 nC with soft reverse recovery reduces EMI and cross-conduction risk in synchronous rectifiers |
Applications
| Server VRM Phase Legs | Telecom 48 V DC-DC Converters |
|---|---|
Use Scenario: High-current, high-efficiency 12 V output stage in dual-phase interleaved buck converter for CPU core power delivery. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 600 kHz with 50% duty cycle and 60 A peak current. Use Value: 5.4 mΩ RDS(on) cuts conduction loss by 32% versus 8 mΩ alternatives, improving full-load efficiency by 0.8%. | Use Scenario: Primary-side switch in 48 V–12 V isolated forward converter for base station power modules. IC Role / Device Role / Timing Role: Main switching transistor handling 40 A RMS current with 100 ns dead-time constraints. Use Value: 75 nC total gate charge enables clean 1 MHz switching with 2 A peak gate driver, reducing transformer size by 25%. |
| Industrial Motor Drive Inverters | EV Onboard Charger (OBC) PFC Stages |
Use Scenario: Half-bridge leg in 24 V servo drive controlling 3 kW BLDC motor with regenerative braking. IC Role / Device Role / Timing Role: High-side switching element subjected to repetitive 80 V bus transients and 100 µs short-circuit events. Use Value: 100 mJ avalanche rating eliminates need for external clamping diodes, simplifying BOM and layout. | Use Scenario: Boost switch in 6.6 kW two-stage OBC PFC front-end operating at 100 kHz with 400 V DC link. IC Role / Device Role / Timing Role: Fast-switching power switch managing 25 A average input current with zero-voltage switching assist. Use Value: Soft-recovery body diode (Qrr = 120 nC) suppresses voltage overshoot during light-load transitions, meeting CISPR-25 Class 5 EMI limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-frequency power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB08CNE8NG | RDS(on) = 5.4 mΩ, Qg = 75 nC, TO-220FP package (shorter leads) | Lower profile; better suited for space-constrained board layouts with limited vertical clearance | Select when mechanical height is constrained and thermal interface to heatsink is via clip rather than screw |
| IPI08CNE8NG | RDS(on) = 5.4 mΩ, Qg = 75 nC, TO-263-3 (D²PAK) surface-mount package | Enables automated assembly and improved thermal coupling to inner-layer copper planes | Select for high-volume production where reflow soldering and PCB thermal management outweigh through-hole reliability needs |
Compared with IPB08CNE8NG and IPI08CNE8NG, IPP08CNE8NG offers identical electrical specs but superior thermal performance in forced-air-cooled systems due to its larger TO-220 copper tab and lower RthJC (0.5 K/W vs. 0.7 K/W for D²PAK), making it preferred for >80 W continuous power dissipation.
Availability
IPP08CNE8NG is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, industrial motor drives, and EV onboard charger PFC stages requiring stable component supply across multi-year production cycles.
Supply support for IPP08CNE8NG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers.
This part belongs to the OptiMOS™ 5 family, designed specifically for high-efficiency, high-frequency power conversion in data center, telecom, and industrial power supplies where low RDS(on) × Qg and robust avalanche capability are critical.
FAQ
What is the maximum recommended gate voltage for IPP08CNE8NG?
The absolute maximum gate-source voltage is ±20 V per datasheet. For reliable long-term operation, gate drive should be limited to +10 V to +15 V for turn-on and –5 V to 0 V for turn-off. Exceeding +15 V increases gate oxide stress without meaningful RDS(on) improvement, while negative turn-off bias improves noise immunity in high-dI/dt environments.
Does IPP08CNE8NG require a gate resistor, and what value is typical?
Yes - a series gate resistor is mandatory to control dV/dt and prevent parasitic oscillation. A 10 Ω resistor is typical for 600 kHz operation with 2 A peak gate drivers; values between 5 Ω and 22 Ω are used depending on layout inductance and required switching speed. Lower values increase EMI risk; higher values raise switching losses.
Can IPP08CNE8NG be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(on) enables stable current sharing. Use matched gate resistors (±5%), symmetrical PCB routing, and common-source Kelvin connections. Derate total current by 15% versus sum of individual ratings to account for thermal coupling and parameter spread across lots.
Is the drain tab electrically isolated in the PG-TO220-3 package?
No - the metal tab is internally connected to the drain terminal. Electrical isolation from the heatsink must be achieved using insulating thermal pads or mica washers rated for ≥1000 V AC. Failure to isolate risks short-circuiting the drain to chassis ground, especially in floating-ground topologies like half-bridges.
IPP08CNE8NG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 85 V
- Current - Continuous Drain (Id) @ 25°C:
- 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6.4mOhm @ 95A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs:
- 99 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6690 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 167W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3
IPP08CNE8NG FAQ
1.How can I place an order for IPP08CNE8NG through Aetrix?
Please submit a Request for Quotation (RFQ) for IPP08CNE8NG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPP08CNE8NG reliable?
The price and inventory of IPP08CNE8NG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP08CNE8NG is usually 5 days.
3.What payment methods are accepted for IPP08CNE8NG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP08CNE8NG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPP08CNE8NG?
IPP08CNE8NG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPP08CNE8NG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPP08CNE8NG?
For technical support, including IPP08CNE8NG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP08CNE8NG requirements.
6.How does Aetrix verify that IPP08CNE8NG is sourced from the original manufacturer or authorized distributors?
All IPP08CNE8NG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP08CNE8NG meets industry standards.
7.What is the process for return or replacement of IPP08CNE8NG?
All IPP08CNE8NG units undergo pre-shipment inspection (PSI). If there is an issue with IPP08CNE8NG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPP08CNE8NG part is unused and in its original packaging.
Return procedure for IPP08CNE8NG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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