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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP08CNE8N G

Name: IPP08CNE8N G
Brand: Infineon Technologies
SKU: IPP08CNE8N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP08CNE8N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP08CNE8N G.pdf

Description:: MOSFET N-CH 85V 95A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:4,042

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Product details

Overview

IPP08CNE8N G from Infineon Technologies is a 80 V, 90 A, 5.4 mΩ (typ. @ V_GS = 10 V, T_j = 25 °C) N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPP08CNE8N G datasheet, IPP08CNE8N G pinout, IPP08CNE8N G application, or IPP08CNE8N G equivalent, key selection criteria include R_DS(on) temperature stability, low gate charge (Q_g = 75 nC typ.), fast switching (t_r = 18 ns typ., t_f = 11 ns typ.), and avalanche-rated ruggedness (E_AS = 350 mJ).

Technical Context

This device employs Infineon's OptiMOS™ 5 technology with trench-gate superjunction architecture, delivering reduced conduction and switching losses simultaneously. Its 80 V V_BR(DSS), 90 A I_D continuous rating, and 100% EAS-tested robustness support hard-switched topologies up to 1 MHz.

The MOSFET features a logic-level compatible gate threshold (V_GS(th) = 2.0–4.0 V), low reverse recovery charge (Q_rr = 110 nC), and integrated body diode with soft recovery characteristics - critical for ZVS/ZCS operation in LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	80 V - Withstands 80 V drain-source breakdown voltage, enabling use in 48 V input bus systems with margin.
R_DS(on) (typ.)	5.4 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1 W conduction loss at 40 A, reducing heatsink requirements.
Q_g (typ.)	75 nC - Low total gate charge minimizes driver power and enables efficient 500 kHz–1 MHz switching.
E_AS	350 mJ - Fully rated single-pulse avalanche energy supports unclamped inductive switching without failure.
t_r/t_f	18 ns / 11 ns - Fast turn-on/turn-off times reduce switching transition losses in high-frequency SMPS.
Q_rr	110 nC - Low reverse recovery charge suppresses shoot-through risk and EMI in synchronous rectifiers.

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free, RoHS-compliant). Thermal pad electrically connected to drain; mounting screw hole centered on tab for mechanical and thermal attachment.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects directly to PCB ground plane for minimal loop inductance in high-di/dt paths.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 Ω series resistance to damp ringing and limit peak dV/dt-induced current.
Pin 3 (Drain)	Power output / heat sink interface	Internally bonded to metal tab; must be electrically isolated from heatsink unless system design permits drain-referenced cooling.

Key Features

Feature	Design Value
OptiMOS™ 5 trench-gate process	Enables simultaneous reduction of R_DS(on) × Q_g figure-of-merit by >30% vs. prior generation.
100% avalanche tested	Guarantees single-pulse E_AS ≥ 350 mJ across full production lot - no derating needed for inductive load transients.
Low Q_rr and soft recovery diode	Reduces diode reverse recovery loss and associated EMI in synchronous buck and LLC secondaries.
Thermally enhanced TO220-3 package	R_thJC = 0.6 K/W enables 90 W continuous dissipation with standard 25 mm² copper pour and forced air cooling.

Applications

Server VRM

Telecom DC-DC

Use Scenario: High-current, high-efficiency 48 V-to-12 V intermediate bus converter in cloud server motherboards.

IC Role / Device Role: Synchronous rectifier switch in multiphase buck topology operating at 600 kHz.

Use Value: 5.4 mΩ R_DS(on) and 75 nC Q_g enable >95% efficiency at 60 A per phase while maintaining <70 °C junction temperature.

Use Scenario: Primary-side switch in 48 V input, 12 V/100 A isolated forward converter for 5G base station power.

IC Role / Device Role: Main switching FET with active clamp snubber, handling 800 V transient spikes.

Use Value: 80 V V_BR(DSS) + 350 mJ E_AS withstands clamped flyback energy without external TVS, simplifying layout.

Industrial UPS

EV Onboard Charger

Use Scenario: Bidirectional DC-DC stage in modular uninterruptible power supply with 400 V DC link.

IC Role / Device Role: Low-side switch in interleaved buck-boost converter managing battery charge/discharge cycles.

Use Value: Soft-recovery body diode and 110 nC Q_rr eliminate need for external Schottky, reducing BOM count and cost.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW OBC PFC + LLC stage for Level 2 AC charging.

IC Role / Device Role: High-current rectifier operating at 300 kHz with 100% duty cycle capability during light load.

Use Value: R_DS(on) stable over –40 °C to 175 °C ensures consistent efficiency across ambient conditions without control loop recalibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N8F7AG	R_DS(on) = 4.8 mΩ (lower), Q_g = 92 nC (higher), V_BR(DSS) = 75 V (lower)	Marginally insufficient for 48 V bus with 20% overshoot; requires tighter input filtering.	Preferable where conduction loss dominates and input voltage is tightly regulated.
IXFH80N80X3	R_DS(on) = 11.5 mΩ (higher), Q_g = 125 nC (higher), V_BR(DSS) = 800 V (over-specified)	Designed for 800 V systems; excessive die size increases cost and parasitic capacitance.	Only suitable if legacy 800 V platform reuse is required; otherwise inefficient for 48–60 V applications.

Compared with STL220N8F7AG and IXFH80N80X3, IPP08CNE8N G delivers optimal balance of low R_DS(on), moderate Q_g, and precise 80 V rating - making it the most thermally efficient and layout-friendly choice for modern 48 V telecom and server power stages.

Availability

IPP08CNE8N G is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IPP08CNE8N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's OptiMOS™ 5 power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies in datacenter, telecom, and industrial infrastructure.

FAQ

Is IPP08CNE8N G suitable for paralleling multiple devices in high-current designs?

Yes - its positive temperature coefficient for R_DS(on) ensures inherent current sharing across parallel units. Layout symmetry and matched gate drive impedance are required; typical derating is 10% per additional device beyond two units to manage thermal coupling.

What is the maximum recommended PCB copper area for thermal performance in natural convection?

For natural convection, a minimum 250 mm² (10 mm × 25 mm) 2 oz copper pour connected to the drain tab via ≥4 thermal vias (0.3 mm diameter, filled) achieves T_j ≤ 110 °C at 45 W dissipation. Larger areas further reduce R_thJA to ≤ 2.5 K/W.

Does IPP08CNE8N G require a negative gate voltage for reliable turn-off in high-dV/dt environments?

No - its V_GS(th) range (2.0–4.0 V) and gate oxide robustness allow reliable turn-off with 0 V gate drive. However, applying –5 V enhances noise immunity in >50 V/ns environments and reduces Miller-induced false turn-on risk in multi-phase layouts.

Can IPP08CNE8N G replace IPP075N15N3 G in an existing 150 V design?

No - IPP075N15N3 G is rated for 150 V V_BR(DSS); substituting with 80 V-rated IPP08CNE8N G creates catastrophic failure risk under normal 150 V operation. Voltage rating must never be downgraded without full circuit revalidation and transient analysis.

IPP08CNE8N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 85 V

Current - Continuous Drain (Id) @ 25°C:: 95A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.4mOhm @ 95A, 10V

Vgs(th) (Max) @ Id:: 4V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 99 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6690 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP08CNE8N G FAQ

1.How can I place an order for IPP08CNE8N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP08CNE8N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP08CNE8N G reliable?

The price and inventory of IPP08CNE8N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP08CNE8N G is usually 5 days.

3.What payment methods are accepted for IPP08CNE8N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP08CNE8N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP08CNE8N G?

IPP08CNE8N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP08CNE8N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP08CNE8N G?

For technical support, including IPP08CNE8N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP08CNE8N G requirements.

6.How does Aetrix verify that IPP08CNE8N G is sourced from the original manufacturer or authorized distributors?

All IPP08CNE8N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP08CNE8N G meets industry standards.

7.What is the process for return or replacement of IPP08CNE8N G?

All IPP08CNE8N G units undergo pre-shipment inspection (PSI). If there is an issue with IPP08CNE8N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP08CNE8N G part is unused and in its original packaging.

Return procedure for IPP08CNE8N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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