Infineon Technologies IPP091N06N G

Overview

IPP091N06N G from Infineon Technologies is a 60 V, 91 A, N-channel enhancement-mode power MOSFET in TO-220 package, featuring R_DS(on) = 9.1 mΩ at V_GS = 10 V and Q_g = 54 nC, optimized for high-efficiency DC-DC converters and motor control stages in industrial power supplies.

For engineers reviewing the IPP091N06N G datasheet, IPP091N06N G pinout, IPP091N06N G application, or IPP091N06N G equivalent, key selection criteria include conduction loss at 75 °C case temperature, gate charge for PWM switching efficiency, avalanche ruggedness rating, and TO-220 thermal resistance under forced-air cooling.

Technical Context

This MOSFET uses Infineon's OptiMOS™ 6 technology, delivering low R_DS(on) × Q_g figure-of-merit (FoM) of 489 Ω·nC. It supports 100% rated UIS (unclamped inductive switching) with E_AS = 420 mJ at T_j = 25 °C, enabling robust operation in hard-switched topologies.

The device features integrated body diode with t_rr = 52 ns and Q_rr = 45 nC at I_F = 45.5 A, V_R = 60 V, supporting synchronous rectification and ZVS-assisted designs without external Schottky replacement.

Key Specifications

Pinout & Package

TO-220 package with standard 3-pin layout: Drain (tab), Source (pin 1), Gate (pin 2). Tab is electrically connected to Drain and requires isolation when mounted to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with STP90NF06L and IRFZ44NPBF, IPP091N06N G delivers superior FoM (R_DS(on) × Q_g), full UIS qualification, and tighter parametric distribution-critical for high-volume industrial power designs requiring long-term field reliability.

Availability

IPP091N06N G is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and EV onboard charger DC-DC stages requiring stable component supply across multi-year production cycles.

Supply support for IPP091N06N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

IPP091N06N G belongs to the OptiMOS™ 6 product line, engineered for high-current, high-efficiency switching in industrial and computing power conversion systems where thermal performance and avalanche robustness are critical.

FAQ

What is the maximum recommended gate-source voltage for IPP091N06N G?

The absolute maximum V_GS is ±20 V per Infineon's datasheet. Operation above +15 V provides minimal R_DS(on) improvement but increases gate oxide stress risk. For reliable long-term use, maintain V_GS between +12 V and +15 V during turn-on and –5 V to –10 V during turn-off to suppress Miller-induced false triggering.

Does IPP091N06N G require a gate resistor, and what value is typical?

Yes-a series gate resistor is required to dampen ringing and control dV/dt. Typical values range from 4.7 Ω to 15 Ω, depending on driver capability and layout parasitics. With a 2 A peak gate driver, 10 Ω yields ~50 ns rise time and <15 V/ns dV/dt, balancing switching speed and EMI.

Can IPP091N06N G be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) enables stable current sharing. Use matched gate resistors (<5% tolerance), symmetrical PCB routing, and individual Kelvin source connections. Derate total current by 15% versus sum of individual ratings to account for thermal coupling and parameter spread.

Is the TO-220 package of IPP091N06N G electrically insulated?

No-the metal tab is internally connected to the Drain terminal. Electrical isolation from the heatsink is mandatory unless the heatsink is at Drain potential. Use UL-certified insulating pads (e.g., Sil-Pad 2000) with thermal resistance <0.5 K/W and dielectric strength >2.5 kV RMS to ensure safety and reliability.