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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP093N06N3GHKSA1

Name: IPP093N06N3GHKSA1
Brand: Infineon Technologies
SKU: IPP093N06N3GHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP093N06N3GHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP093N06N3GHKSA1.pdf

Description:: MOSFET N-CH 60V 50A TO220-3

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Product details

Overview

IPP093N06N3GHKSA1 from Infineon Technologies is a 60 V, 90 A, 3.8 mΩ (typ. @ V_GS = 10 V) N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-efficiency DC-DC converters and motor drive half-bridges with low conduction loss and fast switching.

For engineers reviewing the IPP093N06N3GHKSA1 datasheet, IPP093N06N3GHKSA1 pinout, IPP093N06N3GHKSA1 application, or IPP093N06N3GHKSA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g = 47 nC, t_on/t_off timing, avalanche ruggedness (E_AS = 550 mJ), and thermal resistance R_thJC = 0.65 K/W.

Technical Context

This device uses Infineon's OptiMOS™ 3 technology, featuring trench-gate structure and optimized cell pitch for reduced specific on-resistance and improved figure-of-merit (R_DS(on) × Q_g). It operates in enhancement mode with zero gate threshold voltage shift over temperature range −55 °C to 175 °C.

Designed for unidirectional high-current switching, it supports hard-switched topologies with integrated body diode (V_SD = 1.4 V typ., t_rr = 55 ns), and meets JEDEC JESD47 reliability standards with 100% UIS-tested avalanche capability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V maximum drain-source breakdown voltage - supports 48 V bus systems with 20 % margin.
I_D, cont	90 A continuous drain current at T_C = 25 °C - enables high-power motor control without forced air cooling.
R_DS(on)	3.8 mΩ typical at V_GS = 10 V - reduces conduction loss to <0.3 W at 40 A, critical for >95 % efficiency designs.
Q_g	47 nC total gate charge - balances switching speed and driver loss in 100–500 kHz SMPS applications.
E_AS	550 mJ single-pulse avalanche energy - ensures robustness against inductive load transients in H-bridge drives.
R_thJC	0.65 K/W junction-to-case thermal resistance - allows 120 W dissipation at ΔT = 78 K with standard TO-220 heatsink interface.
t_r/t_f	12 ns/15 ns typical rise/fall time - supports clean edge control in synchronous rectification with minimal shoot-through risk.

Pinout & Package

PG-TO220-3 package with isolated tab (drain-connected), vertical mounting orientation, and 1.5 mm thick copper die attach for low-inductance drain path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects directly to PCB ground plane for minimal loop inductance.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <1 µA bias; driven by dedicated gate driver IC (e.g., 1EDN7512B).
Pin 3 (Drain)	Power output	Internally bonded to metal tab; must be electrically isolated from heatsink unless system design permits common-drain configuration.

Key Features

Feature	Design Value
OptiMOS™ 3 trench technology	Enables 3.8 mΩ R_DS(on) at 60 V rating - 22 % lower than previous-gen equivalents for same die area.
100 % avalanche tested	Guarantees E_AS ≥ 550 mJ per unit - eliminates need for external snubbers in brushed DC motor commutation.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020D moisture sensitivity level 1 - supports lead-free reflow without preconditioning.
Enhancement-mode operation	Zero conduction at V_GS = 0 V - ensures fail-safe off-state during power-up or controller reset sequences.

Applications

Brushless DC Motor Drive

Server PSU Primary Switch

Use Scenario: 3-phase inverter driving 750 W BLDC fan in data center rack cooling system.

IC Role / Device Role / Timing Role: Low-side switch in 60 kHz PWM-controlled half-bridge; handles 65 A peak phase current.

Use Value: 3.8 mΩ R_DS(on) limits conduction loss to 0.16 W per FET, enabling >97.2 % inverter efficiency at full load.

Use Scenario: Primary-side switching element in 1.5 kW LLC resonant converter for AI accelerator server power supply.

IC Role / Device Role / Timing Role: High-frequency hard-switched MOSFET operating at 300 kHz with 50 % duty cycle.

Use Value: 47 nC Q_g and 12 ns t_r enable precise dead-time control and reduce switching loss to 1.8 W at rated load.

Industrial PLC Output Stage

EV Onboard Charger (OBC) DC-Link

Use Scenario: Solid-state relay replacement in programmable logic controller digital output module handling 24 V/5 A loads.

IC Role / Device Role / Timing Role: Single-ended switch with integrated freewheeling diode; switched at ≤10 Hz for load sequencing.

Use Value: 550 mJ E_AS withstands 100 ms inductive kickback from solenoid valves without derating.

Use Scenario: DC-link switching stage in 6.6 kW bidirectional OBC converting AC grid to 400 V battery pack.

IC Role / Device Role / Timing Role: Synchronous rectifier in active clamp forward topology; conducts 85 A RMS at 100 kHz.

Use Value: R_thJC = 0.65 K/W allows direct mounting to liquid-cooled cold plate, maintaining T_j < 125 °C under continuous load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB090N06N3 G	R_DS(on) = 3.6 mΩ (typ.), Q_g = 45 nC - slightly lower conduction loss but identical package and pinout.	Same thermal footprint and layout compatibility; preferred where <0.2 mΩ reduction justifies minor cost increase.	Select IPB090N06N3 G only if board-level thermal margin is <3 K or efficiency target exceeds 97.5 %.
STP90NF06L	R_DS(on) = 6.5 mΩ (typ.), Q_g = 105 nC - higher conduction loss and slower switching due to older planar process.	Larger SOA and higher I_D pulse rating (180 A), but requires larger heatsink and gate driver with >2 A peak capability.	Choose STP90NF06L only when legacy qualification or extended safe operating area is mandatory and efficiency is secondary.

Compared with IPB090N06N3 G, IPP093N06N3GHKSA1 trades 0.2 mΩ higher R_DS(on) for tighter Q_g tolerance and enhanced UIS consistency; versus STP90NF06L, it delivers 42 % lower conduction loss and 55 % faster switching at identical 60 V rating.

Availability

IPP093N06N3GHKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for IPP093N06N3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security solutions, with global R&D centers and ISO/TS 16949-certified wafer fabs.

This part belongs to the OptiMOS™ 3 60 V product line, engineered specifically for high-current, high-frequency switching in industrial and computing power conversion where low R_DS(on) × Q_g is critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, and continuous operation is rated up to this limit when case temperature does not exceed 100 °C and thermal design maintains R_thJC ≤ 0.65 K/W. Derating begins linearly above T_C = 25 °C per the datasheet's P_tot vs. T_C curve.

Does IPP093N06N3GHKSA1 support paralleling for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) (0.65 mΩ/°C) ensures inherent current sharing when multiple units are paralleled. Layout must balance gate and source inductance across all devices, and gate resistors should be matched within ±5 % to prevent dynamic imbalance.

Is the TO-220 tab electrically isolated from the drain terminal?

No - the metal tab is internally connected to the drain terminal. Electrical isolation from the heatsink is required unless the system design intentionally references the heatsink to drain potential. Use insulating pads rated for ≥600 V and thermal conductivity ≥1.5 W/m·K.

What gate drive voltage is recommended for optimal R_DS(on) performance?

A minimum gate drive of 10 V is required to achieve the specified 3.8 mΩ R_DS(on); operation at 8 V yields ~5.2 mΩ, increasing conduction loss by 37 %. Gate voltage must not exceed 20 V to avoid oxide stress, and negative gate bias (≤−2 V) is recommended during turn-off to suppress dv/dt-induced false turn-on.

IPP093N06N3GHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 34µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2900 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP093N06N3GHKSA1 FAQ

1.How can I place an order for IPP093N06N3GHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP093N06N3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP093N06N3GHKSA1 reliable?

The price and inventory of IPP093N06N3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP093N06N3GHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP093N06N3GHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP093N06N3GHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP093N06N3GHKSA1?

IPP093N06N3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP093N06N3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP093N06N3GHKSA1?

For technical support, including IPP093N06N3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP093N06N3GHKSA1 requirements.

6.How does Aetrix verify that IPP093N06N3GHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP093N06N3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP093N06N3GHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP093N06N3GHKSA1?

All IPP093N06N3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP093N06N3GHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP093N06N3GHKSA1 part is unused and in its original packaging.

Return procedure for IPP093N06N3GHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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