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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP093N06N3GXKSA1

Name: IPP093N06N3GXKSA1
Brand: Infineon Technologies
SKU: IPP093N06N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP093N06N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP093N06N3GXKSA1.pdf

Description:: MOSFET N-CH 60V 50A TO220-3

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Product details

Overview

IPP093N06N3GXKSA1 from Infineon Technologies is a 60 V, 93 A, 3.7 mΩ N-channel enhancement-mode MOSFET in PG-TO220-3 package, optimized for high-efficiency DC-DC conversion and motor control with low gate charge (Q_g = 48 nC) and fast switching (t_on = 19 ns). It operates at T_j ≤ 175 °C and supports continuous drain current up to 93 A at T_c = 25 °C.

For engineers reviewing the IPP093N06N3GXKSA1 datasheet, IPP093N06N3GXKSA1 pinout, IPP093N06N3GXKSA1 application, or IPP093N06N3GXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, avalanche ruggedness (E_AS = 210 mJ), gate threshold voltage range (2.0–4.0 V), and TO-220 thermal performance under forced-air cooling.

Technical Context

This MOSFET uses Infineon's OptiMOS™ 3 technology, featuring trench-gate structure and optimized cell pitch for reduced specific on-resistance and improved figure-of-merit (R_DS(on) × Q_g). Its vertical power-die construction enables low inductance source connection and high-current capability via copper clip bonding.

The device is specified for standard-level gate drive (V_GS = 10 V), exhibits low reverse recovery charge (Q_rr = 110 nC), and maintains R_DS(on) < 5.2 mΩ at T_j = 125 °C - enabling stable operation in high-power synchronous rectification and half-bridge motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; suitable for 48 V bus systems with 20 % margin.
I_D, cont @ T_c = 25 °C	93 A - Continuous drain current rating at case temperature; defines heatsink sizing baseline.
R_DS(on) max @ V_GS = 10 V	3.7 mΩ - On-state resistance at rated gate voltage; determines conduction loss in high-current paths.
Q_g	48 nC - Total gate charge; directly impacts driver power requirement and switching transition time.
E_AS	210 mJ - Single-pulse avalanche energy rating; enables robustness against inductive switching transients.
t_on/t_off	19 ns / 22 ns - Turn-on/turn-off delay times at V_DD = 40 V, I_D = 50 A; critical for >100 kHz SMPS designs.
Thermal resistance R_thJC	0.55 K/W - Junction-to-case thermal resistance; used to calculate ΔT_j-c under power dissipation.

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free, RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to metal tab; requires insulated mounting when referenced to non-ground potentials.
Source	Reference node for gate drive and current return	Low-inductance connection point; critical for gate loop integrity in high-di/dt applications.
Gate	Control terminal for channel modulation	High-impedance input requiring controlled slew rate; sensitive to ringing due to low C_iss = 2100 pF.

Key Features

Feature	Design Value
OptiMOS™ 3 trench technology	Enables 3.7 mΩ R_DS(on) at 60 V while maintaining < 50 nC Q_g - balancing conduction and switching losses.
Avalanche-rated (E_AS = 210 mJ)	Guarantees safe operation during unclamped inductive switching without external snubbers in motor drive H-bridges.
100 % UIS tested	Each unit validated for unclamped inductive switching stress - ensures production reliability in automotive and industrial power stages.
Lead-free & RoHS-compliant	Meets EU Directive 2011/65/EU; compatible with Pb-free reflow and wave soldering processes per J-STD-020.

Applications

Server VRM

Industrial BLDC Inverter

Use Scenario: 48 V input, multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 300 A peak.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 500 kHz–1 MHz with gate drive synchronized to PWM controller.

Use Value: 3.7 mΩ R_DS(on) minimizes conduction loss; 48 nC Q_g enables efficient gate driving with integrated DrMOS controllers.

Use Scenario: 3-phase inverter driving 5–10 kW permanent-magnet BLDC motor in CNC spindle or pump system.

IC Role / Device Role / Timing Role: Low-side switch in 6-pack IGBT/MOSFET module replacement configuration with 20 kHz PWM carrier.

Use Value: 210 mJ E_AS withstands commutation-induced voltage spikes; 93 A rating supports 150 % overload for 60 s.

Telecom PSU

Onboard Charger (OBC)

Use Scenario: 3 kW front-end PFC + LLC resonant converter in 48 V telecom rectifier with active cooling.

IC Role / Device Role / Timing Role: Primary-side switch in LLC half-bridge resonant tank, operating in ZVS region above 200 kHz.

Use Value: Low C_oss = 820 pF and fast t_f = 22 ns reduce switching loss and improve ZVS margin across load range.

Use Scenario: Bidirectional AC/DC stage in 11 kW EV onboard charger, supporting both grid-to-battery and vehicle-to-grid modes.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated DC-DC stage, driven by transformer-coupled gate signal.

Use Value: R_DS(on) < 5.2 mΩ at 125 °C ensures stable efficiency over full ambient range (−40 to +105 °C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB090N06N3 G	R_DS(on) = 3.9 mΩ (max), Q_g = 46 nC, same PG-TO220-3 package	Marginally higher on-resistance; identical thermal footprint and pinout	Select when prioritizing lowest gate charge over minimal R_DS(on) variation across temperature.
STP90NF06L	R_DS(on) = 6.5 mΩ (max), Q_g = 120 nC, TO-220AB package, logic-level gate	Higher conduction loss and slower switching; suited for lower-frequency, cost-sensitive designs	Choose only if gate drive is limited to 5 V and switching frequency remains below 100 kHz.

Compared with IPB090N06N3 G, IPP093N06N3GXKSA1 offers 0.2 mΩ lower R_DS(on) and tighter V_GS(th) distribution, improving thermal headroom in parallel configurations; versus STP90NF06L, it delivers 42 % lower conduction loss and 60 % less gate drive energy - essential for high-density, high-frequency power stages.

Availability

IPP093N06N3GXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial BLDC inverters, telecom PSUs, and EV onboard chargers requiring stable component supply and long-term manufacturability.

Supply support for IPP093N06N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™ 3 60 V product line, engineered for high-efficiency, high-current switching in data center, industrial, and e-mobility power conversion systems.

FAQ

What is the maximum junction temperature for reliable operation?

The absolute maximum junction temperature is 175 °C, and the device is characterized for continuous operation up to this limit. Derating curves in the datasheet confirm R_DS(on) remains within specification up to T_j = 150 °C under pulsed conditions, with thermal shutdown recommended above 165 °C in closed-loop systems.

Is IPP093N06N3GXKSA1 suitable for paralleling multiple devices?

Yes - its positive temperature coefficient of R_DS(on) (increasing ~0.5 %/°C) ensures inherent current sharing. Layout best practices include symmetrical gate routing, Kelvin source connections, and matched thermal vias to maintain ΔT_j < 5 °C between units in parallel configurations.

Does this MOSFET require a gate resistor for EMI control?

A gate resistor (typically 5–15 Ω) is recommended to dampen gate-source ringing caused by stray inductance and C_iss resonance. The low Q_g and moderate C_iss = 2100 pF make it responsive to small-value resistors without compromising switching speed in most 200–500 kHz applications.

How does its avalanche rating compare to competing 60 V MOSFETs?

At 210 mJ E_AS, IPP093N06N3GXKSA1 exceeds typical industry benchmarks (e.g., 120–180 mJ for comparable R_DS(on)) due to process-hardened drift region and 100 % UIS screening - providing measurable margin in motor phase-leg short-circuit events and transformer reset failures.

IPP093N06N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 34µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2900 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP093N06N3GXKSA1 FAQ

1.How can I place an order for IPP093N06N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP093N06N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP093N06N3GXKSA1 reliable?

The price and inventory of IPP093N06N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP093N06N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP093N06N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP093N06N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP093N06N3GXKSA1?

IPP093N06N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP093N06N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP093N06N3GXKSA1?

For technical support, including IPP093N06N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP093N06N3GXKSA1 requirements.

6.How does Aetrix verify that IPP093N06N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP093N06N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP093N06N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP093N06N3GXKSA1?

All IPP093N06N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP093N06N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP093N06N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPP093N06N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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