Infineon Technologies IPP096N03L G

Overview

IPP096N03L G from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO220-3 package, rated for 30 V V_DS, 9.6 mΩ R_DS(on) at V_GS = 10 V, 35 A continuous drain current at T_C = 25 °C, and optimized for high-efficiency DC/DC converters and SMPS primary-side switching.

For engineers reviewing the IPP096N03L G datasheet, IPP096N03L G pinout, IPP096N03L G application, or IPP096N03L G equivalent, this device supports fast-switching, avalanche-rated operation with low gate charge (Q_g = 7.4 nC) and robust thermal performance (R_thJC = 3.6 K/W), critical for compact, high-power-density power supplies.

Technical Context

This MOSFET employs OptiMOS®3 technology to minimize conduction and switching losses simultaneously, achieving a low figure-of-merit (Q_g × R_DS(on)) of ~71 mΩ·nC. Its logic-level gate threshold (V_GS(th) = 1–2.2 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

The device features fully characterized dynamic parameters including C_iss = 1200–1600 pF, C_oss = 500–660 pF, and t_r/t_f = 3.2 ns/2.6 ns, supporting MHz-range switching in synchronous buck topologies. Avalanche rating (E_AS = 40 mJ) ensures ruggedness under transient overvoltage conditions.

Key Specifications

Pinout & Package

Package: PG-TO220-3 - Through-hole, isolated drain tab, standard heatsink-mountable outline with 3.6 K/W junction-to-case thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IPB096N03L G, the SMD variant offers superior PCB thermal coupling but requires reflow-compatible layout; versus IRL3803PBF, IPP096N03L G delivers 21% lower conduction loss and guaranteed avalanche immunity-critical for automotive and telecom surge environments.

Availability

IPP096N03L G is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC modules, and automotive body control units requiring stable component supply across multi-year production cycles.

Supply support for IPP096N03L G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS®3 power transistor product line, engineered specifically for high-efficiency, high-frequency switching in DC/DC converters and SMPS applications demanding low R_DS(on) and fast switching.

FAQ

What is the maximum safe operating temperature for IPP096N03L G?

The junction temperature must not exceed 175 °C under any operating condition. With R_thJC = 3.6 K/W and T_C = 100 °C, the device dissipates up to 20.8 W before reaching that limit. Derating is required above 25 °C case temperature per the P_tot vs. T_C curve on page 4 of the datasheet.

Can IPP096N03L G be driven directly by a 3.3 V microcontroller GPIO?

Yes-its V_GS(th) range (1–2.2 V) and logic-level design ensure full enhancement at 3.3 V, though R_DS(on) increases to ~14.1 mΩ at V_GS = 4.5 V. For optimal efficiency, use a dedicated gate driver or buffer stage when operating above 20 A.

Is IPP096N03L G suitable for synchronous rectification in a buck converter?

Yes-it supports synchronous rectification as a low-side switch due to its low R_DS(on) and fast switching (t_r = 3.2 ns, t_f = 2.6 ns). The integrated body diode has V_SD = 0.94–1.2 V at 30 A, making it viable for freewheeling when gate timing is precisely controlled.

Does IPP096N03L G require a heatsink in typical 35 A operation?

Yes-continuous 35 A operation at T_C = 25 °C implies ~11.8 W conduction loss (I²R). Without a heatsink, the case temperature would rise rapidly beyond safe limits. A minimum 3.6 K/W heatsink or equivalent PCB copper area (6 cm²) is required to maintain T_j ≤ 175 °C.