Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP09N03LA

Name: IPP09N03LA
Brand: Infineon Technologies
SKU: IPP09N03LA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPP09N03LA

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP09N03LA.pdf

Description:: MOSFET N-CH 25V 50A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,078

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPP09N03LA from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO220-3-1 package, rated for 25 V V_DS, 9.2 mΩ R_DS(on) at V_GS = 10 V and I_D = 30 A, 50 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature - used in high-frequency DC/DC converters and synchronous rectification stages.

For engineers reviewing the IPP09N03LA datasheet, IPP09N03LA pinout, IPP09N03LA application, or IPP09N03LA equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), dv/dt ruggedness (6 kV/µs), and thermal resistance (R_thJC = 2.4 K/W) for high-efficiency, thermally constrained power stage designs.

Technical Context

This MOSFET employs a trench-based silicon process optimized for low conduction and switching losses in hard-switched and synchronous buck topologies. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

Dynamic parameters confirm suitability for >500 kHz operation: C_iss = 1642 pF typ., Q_g = 13 nC max., Q_gd = 4.3 nC max., and t_r/t_f < 110 ns / 5 ns - enabling fast, controlled transitions with minimal overlap loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 12 V input rail applications with margin
R_DS(on) max	9.2 mΩ at V_GS = 10 V, I_D = 30 A - Enables ≤1.5 W conduction loss at 40 A
I_D cont.	50 A at T_C = 25 °C - Supported by TO-220 thermal path and bondwire rating
Q_g	13 nC max. - Low gate drive power requirement for high-frequency PWM control
dv/dt rating	6 kV/µs - Confirmed immunity to false turn-on in noisy high-dV/dt environments
R_thJC	2.4 K/W - Allows ~26 W dissipation before reaching 175 °C junction under heatsink cooling
T_j max	175 °C - Supports operation in sealed industrial enclosures without derating at ambient ≤85 °C

Pinout & Package

IPP09N03LA uses the PG-TO220-3-1 package: insulated tab, vertical lead orientation, standard TO-220 footprint with G-D-S pin order (viewed from front, leads down). Thermal pad is electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Left)	Gate (G)	Control terminal; accepts logic-level drive; requires <13 nC charge for full enhancement
Pin 2 (Middle)	Drain (D)	Main power output node; tied to heatsink tab; carries full load current and avalanche energy
Pin 3 (Right)	Source (S)	Power return reference; forms common node with gate driver ground; low-inductance layout critical

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.6 V typ. - Direct interface with 3.3 V microcontrollers and PWM ICs
Low FOM (Q_g × R_DS(on))	~120 nC·mΩ - Optimized trade-off between switching speed and conduction loss
Enhanced dv/dt ruggedness	6 kV/µs - Validated under worst-case commutation stress per JEDEC JESD22-A114
High-temperature operation	Rated to 175 °C T_j - Eliminates need for thermal derating in automotive under-hood or industrial motor drives
Integrated body diode	Q_rr = 10 nC max. - Enables efficient synchronous rectification with low reverse recovery loss

Applications

Server VRM

Industrial SMPS

Use Scenario: Point-of-load (POL) converter supplying core voltage to Xeon or EPYC CPUs.

IC Role / Device Role / Timing Role: Synchronous high-side switch in multiphase buck regulator; switches at 500–1000 kHz.

Use Value: 9.2 mΩ R_DS(on) and 13 nC Q_g minimize combined conduction + switching loss, improving VRM efficiency above 90% at 50 A.

Use Scenario: 24 V input, 5 V/30 A output isolated forward converter in PLC power supply.

IC Role / Device Role / Timing Role: Primary-side active clamp switch; handles repetitive 25 V blocking and 45 A pulsed current.

Use Value: 175 °C rating and 2.4 K/W R_thJC sustain full load in compact metal-enclosed designs without forced air.

Automotive DC/DC

LED Driver

Use Scenario: 12 V to 5 V step-down for ADAS camera module power rail.

IC Role / Device Role / Timing Role: High-side switch in non-isolated buck; operates in automotive temperature range (-40 to 125 °C ambient).

Use Value: Logic-level gate enables direct drive from ASIL-B MCU GPIO; 6 kV/µs dv/dt rating prevents misfiring during load dump transients.

Use Scenario: Constant-current LED string driver with PWM dimming in streetlight fixture.

IC Role / Device Role / Timing Role: Low-side PWM switch controlling 35 A LED current; duty cycle modulated up to 20 kHz.

Use Value: 50 A I_D rating and 10 nC Q_rr reduce thermal stress and EMI during fast PWM edge transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLZ44NPBF	R_DS(on) = 22 mΩ @ 10 V; Q_g = 60 nC; TO-220 package	Higher conduction loss; slower switching; suitable only for ≤200 kHz operation	Lower cost but sacrifices efficiency and thermal headroom in high-frequency designs
STP9NK25Z	V_DS = 250 V; R_DS(on) = 220 mΩ @ 10 V; Zener-protected gate	Over-specified voltage rating; unsuitable for low-voltage, high-current optimization	Only appropriate where transient overvoltage >100 V is expected - not a functional substitute

Compared with IRLZ44NPBF and STP9NK25Z, IPP09N03LA delivers superior power density via its 9.2 mΩ/13 nC combination and 175 °C rating - making it the only choice among the three for thermally constrained, high-frequency DC/DC stages requiring <15 mΩ on-resistance.

Availability

IPP09N03LA is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS, automotive DC/DC converters, and LED drivers requiring stable component supply across multi-year production cycles.

Supply support for IPP09N03LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS®2 family - designed specifically for high-efficiency, high-frequency switching applications in server, telecom, and industrial power supplies where low R_DS(on) and fast switching are critical.

FAQ

Is IPP09N03LA pin-compatible with IPI09N03LA?

Yes - both share identical PG-TO220-3-1 (IPP) and PG-TO262-3-1 (IPI) packages with G-D-S pinout, same marking layout, and identical electrical specs. The only difference is package type: IPP uses insulated TO-220; IPI uses D²PAK. PCB footprints and gate/drain/source connections are functionally interchangeable when mechanical mounting allows.

What is the maximum recommended gate resistor for 1 MHz switching?

A 2.7 Ω gate resistor is validated in the datasheet for 1 MHz operation with 10 V drive. At that frequency, total switching time (t_r + t_f) remains <115 ns, limiting Miller-induced shoot-through risk. Higher values increase switching loss; lower values require careful layout to avoid ringing due to L_g interaction with Q_gd.

Does IPP09N03LA support avalanche energy handling in unclamped inductive switching?

Yes - it is fully rated for single-pulse avalanche with E_AS = 75 mJ at I_D = 45 A and R_GS = 25 Ω. This capability is verified per JEDEC JESD22-A114 and supports robustness in flyback or active clamp circuits where inductive energy must be absorbed internally without external snubbers.

Can IPP09N03LA be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (R_DS(on) increases with T_j) enables inherent current sharing. Layout must ensure matched gate drive impedance and symmetrical thermal paths; paralleling beyond two units requires individual gate resistors and Kelvin source connections to maintain stability at high dI/dt.

IPP09N03LA Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1642 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP09N03LA FAQ

1.How can I place an order for IPP09N03LA through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP09N03LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP09N03LA reliable?

The price and inventory of IPP09N03LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP09N03LA is usually 5 days.

3.What payment methods are accepted for IPP09N03LA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP09N03LA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP09N03LA?

IPP09N03LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP09N03LA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP09N03LA?

For technical support, including IPP09N03LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP09N03LA requirements.

6.How does Aetrix verify that IPP09N03LA is sourced from the original manufacturer or authorized distributors?

All IPP09N03LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP09N03LA meets industry standards.

7.What is the process for return or replacement of IPP09N03LA?

All IPP09N03LA units undergo pre-shipment inspection (PSI). If there is an issue with IPP09N03LA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP09N03LA part is unused and in its original packaging.

Return procedure for IPP09N03LA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…