Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPP100N04S2L03AKSA2

Part No.:
IPP100N04S2L03AKSA2
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP100N04S2L03AKSA2.pdf
Description:
MOSFET N-CH 40V 100A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,264

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPP100N04S2L03AKSA2 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial high-current switching. It features a 40 V VDS, 3.0 mΩ max RDS(on) at VGS = 10 V, 100 A continuous drain current at TC = 25 °C, and AEC-Q101 qualification. It is used in 12 V automotive DC-DC converters and motor control inverters requiring low conduction loss and robust avalanche capability.

For engineers reviewing the IPP100N04S2L03AKSA2 datasheet, IPP100N04S2L03AKSA2 pinout, IPP100N04S2L03AKSA2 application, or IPP100N04S2L03AKSA2 equivalent, key selection criteria include RDS(on) at 4.5 V gate drive, single-pulse avalanche energy (810 mJ), thermal resistance (RthJC = 0.5 K/W), and TO-220-3 package compatibility with heatsink mounting.

Technical Context

This OptiMOS® device employs trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching performance. Its logic-level gate threshold (1.2–2.0 V) enables direct drive from microcontrollers and PWM controllers without level-shifting circuitry.

The integrated body diode supports synchronous rectification and freewheeling in half-bridge topologies. Dynamic parameters-including Ciss = 6000 pF, Qg = 163–230 nC, and tr/tf = 51/27 ns-support efficient operation up to 100 kHz in hard-switched applications with minimal gate drive power.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage compatible with 12 V automotive battery systems with transient margin.
RDS(on) max @ VGS = 10 V3.0 mΩ - Enables ≤3 W conduction loss at 100 A, reducing heatsink requirements in high-current paths.
ID continuous @ TC = 25 °C100 A - Supported by bondwire-limited current rating and 0.5 K/W junction-to-case thermal resistance.
EAS (single pulse)810 mJ - Confirmed avalanche ruggedness for inductive load switching without external snubbers.
Qg total163–230 nC - Determines gate driver peak current requirement (~2.3 A for 100 ns rise time with 1.1 Ω RG).
VGS(th)1.2–2.0 V - Ensures reliable turn-on with 3.3 V or 5 V logic-level controllers without gate boosting.
Tj operating range−55 to +175 °C - Validated for under-hood automotive environments and industrial motor drives.

Pinout & Package

Package: PG-TO220-3-1 (standard through-hole TO-220 variant with isolated tab, lead-free, RoHS-compliant).

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path collectorElectrically connected to metal tab; requires insulating washer when mounted to grounded heatsink.
SourceReference node for gate drive and current sensingLow-inductance return path; critical for stable gate control and accurate shunt-based current monitoring.
GateControl terminal for channel modulationHigh-impedance input; requires low-impedance gate driver (<1.1 Ω recommended) to minimize switching losses.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling.
Ultra-low RDS(on)3.0 mΩ max at 10 V enables >97% efficiency in 12 V/100 A buck stages with minimal thermal derating.
100% avalanche testedEach unit undergoes single-pulse EAS screening at 810 mJ, ensuring field reliability in inductive switching faults.
Logic-level gate driveTurns fully on with 4.5 V gate voltage, eliminating need for charge pumps or level shifters in MCU-driven systems.
MSL1 reflow ratingSuitable for standard Pb-free reflow profiles up to 260 °C peak, supporting automated PCB assembly without moisture sensitivity concerns.

Applications

Automotive DC-DC ConverterIndustrial Motor Inverter

Use Scenario: Step-down conversion from 12 V battery to 5 V/3.3 V for ADAS ECUs and infotainment modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in multiphase buck topology.

Use Value: 3.0 mΩ RDS(on) reduces conduction loss by 40% vs. legacy 5 mΩ devices, enabling smaller heatsinks and higher power density.

Use Scenario: Half-bridge leg in 3 kW BLDC motor drive for HVAC blowers and power steering assist.

IC Role / Device Role / Timing Role: Low-side switching element with integrated freewheeling diode for PWM-controlled phase current.

Use Value: 810 mJ avalanche energy withstands back-EMF transients during sudden load disconnection without failure.

Server PSU ORing FETEnergy Storage System Switch

Use Scenario: Hot-swap and redundancy management in 48 V server power supplies.

IC Role / Device Role / Timing Role: Reverse-polarity protection and current-sharing MOSFET in ORing configuration.

Use Value: 100 A continuous rating and 0.5 K/W RthJC support parallel operation with minimal thermal imbalance across multiple units.

Use Scenario: Main contactor replacement in 48 V lithium-ion battery disconnect units for UPS and microgrids.

IC Role / Device Role / Timing Role: Solid-state main power switch controlling battery pack connection to inverter or charger.

Use Value: −55 to +175 °C operating range ensures functionality during extreme ambient conditions and internal heating events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB100N04S2L03Same die, PG-TO263-3-2 surface-mount package; RthJA = 40 K/W on 6 cm² PCB vs. 62 K/W for TO-220.Preferred for space-constrained SMT designs; requires thermal pad layout and reflow process validation.Select for automated assembly and lower profile; avoid if mechanical mounting or heatsink clamping is required.
STL110N4LF640 V, 110 A, RDS(on) = 2.7 mΩ @ 10 V; no AEC-Q101 qualification; different gate charge profile (Qg = 140 nC).Targeted at industrial consumer power supplies; lacks automotive stress test validation.Choose for cost-sensitive non-automotive applications where AEC-Q101 is not mandated.

Compared with IPB100N04S2L03 and STL110N4LF6, IPP100N04S2L03AKSA2 provides verified automotive qualification, TO-220 mechanical robustness, and consistent 3.0 mΩ RDS(on) with tighter gate threshold distribution-critical for deterministic turn-on timing in safety-critical motor control loops.

Availability

IPP100N04S2L03AKSA2 is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor drives, and energy storage system switching requiring stable component supply and long-term lifecycle support.

Supply support for IPP100N04S2L03AKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS® 40 V logic-level power transistor product line, engineered specifically for high-efficiency, high-reliability switching in automotive 12 V systems and industrial 48 V architectures.

FAQ

What is the maximum safe gate-source voltage for IPP100N04S2L03AKSA2?

The absolute maximum VGS is ±20 V, qualified at both −20 V and +20 V per datasheet Rev. 1.0. Operation beyond this range risks irreversible gate oxide damage. Recommended gate drive is 0 to 10 V for full enhancement, with 12 V as upper limit for margin; sustained 15 V operation is not advised.

Does IPP100N04S2L03AKSA2 require a gate resistor, and what value is recommended?

Yes-a series gate resistor is required to control dV/dt and prevent oscillation. With a typical gate charge of 230 nC and target 100 ns rise time, a 1.1 Ω resistor is recommended per datasheet test condition. Higher values reduce EMI but increase switching losses; lower values risk ringing and driver overstress.

Can IPP100N04S2L03AKSA2 be used in parallel configurations?

Yes-its positive temperature coefficient of RDS(on) (increasing with junction temperature) enables inherent current sharing. Successful parallel operation requires matched layout symmetry, identical gate drive paths, and shared heatsinking. Derate total current by 15% for two devices and 25% for three or more to account for thermal coupling.

Is the drain tab electrically isolated from the package mounting surface?

No-the drain is directly connected to the metal tab. Electrical isolation requires a thermally conductive but electrically insulating interface (e.g., silicone pad with ceramic filler or mica washer) when mounting to a grounded heatsink. Failure to isolate may cause short circuits in high-side configurations.

IPP100N04S2L03AKSA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
3.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
230 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6000 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IPP100N04S2L03AKSA2 FAQ

1.How can I place an order for IPP100N04S2L03AKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP100N04S2L03AKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP100N04S2L03AKSA2 reliable?

The price and inventory of IPP100N04S2L03AKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP100N04S2L03AKSA2 is usually 5 days.

3.What payment methods are accepted for IPP100N04S2L03AKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP100N04S2L03AKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP100N04S2L03AKSA2?

IPP100N04S2L03AKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP100N04S2L03AKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP100N04S2L03AKSA2?

For technical support, including IPP100N04S2L03AKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP100N04S2L03AKSA2 requirements.

6.How does Aetrix verify that IPP100N04S2L03AKSA2 is sourced from the original manufacturer or authorized distributors?

All IPP100N04S2L03AKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP100N04S2L03AKSA2 meets industry standards.

7.What is the process for return or replacement of IPP100N04S2L03AKSA2?

All IPP100N04S2L03AKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPP100N04S2L03AKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP100N04S2L03AKSA2 part is unused and in its original packaging.

Return procedure for IPP100N04S2L03AKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPP100N04S2L03AKSA2 Tags

  • IPP100N04S2L03AKSA2
  • IPP100N04S2L03AKSA2 PDF
  • IPP100N04S2L03AKSA2 Datasheet
  • IPP100N04S2L03AKSA2 Specifications
  • IPP100N04S2L03AKSA2 Images
  • Infineon Technologies
  • Infineon Technologies IPP100N04S2L03AKSA2
  • Buy IPP100N04S2L03AKSA2
  • IPP100N04S2L03AKSA2 Price
  • IPP100N04S2L03AKSA2 Distributor
  • IPP100N04S2L03AKSA2 Supplier
  • IPP100N04S2L03AKSA2 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER