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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP100N04S303AKSA1

Name: IPP100N04S303AKSA1
Brand: Infineon Technologies
SKU: IPP100N04S303AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP100N04S303AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP100N04S303AKSA1.pdf

Description:: MOSFET N-CH 40V 100A TO220-3

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Product details

Overview

IPP100N04S303AKSA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified MOSFET in PG-TO220-3-1 package, rated for 40 V V_DS, 2.5 mΩ R_DS(on) at V_GS = 10 V and I_D = 80 A, with 100 A continuous drain current at T_C = 25 °C and 175 °C maximum junction temperature. It is AEC-Q101 qualified and 100% avalanche tested for use in high-current DC-DC converters and motor control stages.

For engineers reviewing the IPP100N04S303AKSA1 datasheet, IPP100N04S303AKSA1 pinout, IPP100N04S303AKSA1 application, or IPP100N04S303AKSA1 equivalent, key selection criteria include ultra-low R_DS(on), thermal resistance of 0.7 K/W (junction-to-case), 898 mJ single-pulse avalanche energy, and compatibility with 260 °C peak reflow soldering per MSL1.

Technical Context

This OptiMOS®-T power transistor uses trench-based silicon technology to achieve low conduction losses while maintaining fast switching performance. Its gate threshold voltage (2.1–4.0 V) ensures robust turn-on margin under noisy automotive conditions, and its 38–50 nC Q_gs supports efficient gate driving with standard 3.3 Ω gate resistors.

The device integrates a robust body diode with 60 ns reverse recovery time and 95 nC Q_rr, enabling reliable synchronous rectification and freewheeling in hard-switched topologies. Thermal design is supported by validated R_thJC = 0.7 K/W and R_thJA = 62 K/W on minimal footprint PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus systems
R_DS(on)	2.5 mΩ max at V_GS = 10 V, I_D = 80 A - Enables <1 W conduction loss at 100 A in optimized heatsink layouts
I_D cont.	100 A at T_C = 25 °C - Supports high-current motor phases and battery disconnect switches
E_AS	898 mJ single-pulse - Withstands repetitive inductive switching surges without failure
Q_g	110–145 nC - Determines gate driver power requirement and switching speed trade-off
T_j max	+175 °C - Allows operation in engine bay or under-hood environments without derating
R_thJC	0.7 K/W - Enables direct thermal coupling to heatsinks for high-power density designs

Pinout & Package

IPP100N04S303AKSA1 is housed in PG-TO220-3-1 package: through-hole, isolated tab, 3-pin configuration with drain-connected metal tab for thermal and electrical grounding.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense shunt
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <150 µA leakage current drive
Pin 3 (Drain)	Power output / high-side switch node	Internally bonded to metal tab; must be electrically isolated from heatsink unless system design permits common-drain topology

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements
MSL1 reflow rating	Compatible with standard lead-free SMT assembly processes up to 260 °C peak
100% avalanche tested	Each unit verified for single-pulse E_AS ≥ 898 mJ, ensuring field reliability in inductive load switching
Green RoHS-compliant package	Halogen-free, lead-free construction meeting EU Directive 2011/65/EU and JEDEC J-STD-020
Optimized body diode	60 ns t_rr and 95 nC Q_rr enable efficient freewheeling in buck and half-bridge converters

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS)

Use Scenario: High-efficiency 12 V → 48 V bidirectional converter in mild hybrid vehicles.

IC Role / Device Role / Timing Role: Primary low-side synchronous rectifier MOSFET in interleaved buck-boost stage.

Use Value: 2.5 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 4 mΩ devices at 100 A, improving system efficiency above 95%.

Use Scenario: Motor phase switching in 12 V EPS control units with torque assist up to 10 N·m.

IC Role / Device Role / Timing Role: High-current H-bridge leg switch handling 80–100 A peak phase currents.

Use Value: 175 °C T_j max and 0.7 K/W R_thJC allow sustained operation under hood ambient temperatures up to 125 °C without forced cooling.

Industrial Motor Drives

Server PSU OR-ing FETs

Use Scenario: Fan and pump controllers in HVAC and factory automation systems.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter output stage driving BLDC motors.

Use Value: 898 mJ E_AS withstands motor stall and short-circuit events without latch-up or parametric shift.

Use Scenario: Hot-swap and redundancy management in 12 V server backplanes.

IC Role / Device Role / Timing Role: OR-ing FET controlling power path between redundant PSUs and load.

Use Value: Ultra-low R_DS(on) minimizes voltage drop (<250 mV at 100 A), preserving tight 12 V ±5% regulation during switchover.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB100N04S303AKSA1	PG-TO263-3-2 package; lower R_thJA on PCB (40 K/W with 6 cm² copper)	Better suited for SMD-based high-density power modules	Select when board space is constrained and thermal pad layout is feasible
IPI100N04S303AKSA1	PG-TO262-3-1 package; identical R_DS(on), same die, no isolation between tab and drain	Requires insulated mounting hardware; preferred for cost-sensitive through-hole designs	Select when mechanical robustness and ease of manual assembly outweigh thermal optimization needs

Compared with IPB100N04S303AKSA1 and IPI100N04S303AKSA1, IPP100N04S303AKSA1 offers identical silicon performance in a cost-optimized TO-220 package with isolated tab-ideal for prototyping, service replacement, and medium-volume industrial controls where thermal interface simplicity is prioritized over ultimate power density.

Availability

IPP100N04S303AKSA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering systems, and industrial motor drives requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IPP100N04S303AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS®-T product line, engineered specifically for high-current, high-temperature automotive and industrial switching applications demanding low R_DS(on), robust avalanche capability, and AEC-Q101 compliance.

FAQ

What is the maximum gate-source voltage rating for IPP100N04S303AKSA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive voltage is 10 V for full enhancement, with minimum functional V_GS(th) of 2.1 V and typical plateau voltage of 5.2 V confirmed across temperature.

Does IPP100N04S303AKSA1 have an integrated body diode, and what are its key parameters?

Yes, it features a monolithic body diode with forward voltage V_SD = 0.85–1.3 V at I_F = 80 A and T_j = 25 °C, reverse recovery time t_rr = 60 ns, and reverse recovery charge Q_rr = 95 nC. These values are measured at V_R = 20 V, I_F = 50 A, and di_F/dt = 100 A/µs.

Can IPP100N04S303AKSA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing ~0.5%/°C) enables stable current sharing. Designers must ensure matched gate drive impedance, symmetrical PCB layout, and thermal coupling to avoid localized hot spots. Derating to 85% of total rated current per device is recommended.

Is IPP100N04S303AKSA1 compliant with RoHS and halogen-free standards?

Yes, it meets RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The "Green Package" designation confirms compliance with Infineon's environmental policy, including absence of brominated flame retardants and antimony trioxide.

IPP100N04S303AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 145 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP100N04S303AKSA1 FAQ

1.How can I place an order for IPP100N04S303AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP100N04S303AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP100N04S303AKSA1 reliable?

The price and inventory of IPP100N04S303AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP100N04S303AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP100N04S303AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP100N04S303AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP100N04S303AKSA1?

IPP100N04S303AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP100N04S303AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP100N04S303AKSA1?

For technical support, including IPP100N04S303AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP100N04S303AKSA1 requirements.

6.How does Aetrix verify that IPP100N04S303AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP100N04S303AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP100N04S303AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP100N04S303AKSA1?

All IPP100N04S303AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP100N04S303AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP100N04S303AKSA1 part is unused and in its original packaging.

Return procedure for IPP100N04S303AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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